JPS57164736A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS57164736A JPS57164736A JP5024181A JP5024181A JPS57164736A JP S57164736 A JPS57164736 A JP S57164736A JP 5024181 A JP5024181 A JP 5024181A JP 5024181 A JP5024181 A JP 5024181A JP S57164736 A JPS57164736 A JP S57164736A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- substrate
- solvent
- action
- developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To normally form a pattern by using a solvent contg. an aliphatic hydrocarbon as a developer for a photoresist to reduce the dissolving power to a substrate and the action such as solvent shock. CONSTITUTION:A photoresist layer on a substrate of an org. substance such as acrylic resin, styrol resin or vinyl chloride resin is developed with a developer contg. an aliphatic hydrocarbon such as pentane, hexane or undecane. By reducing the dissolving power to the substrate and the action such as solvent shock, a pattern can be formed normally.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5024181A JPS57164736A (en) | 1981-04-03 | 1981-04-03 | Formation of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5024181A JPS57164736A (en) | 1981-04-03 | 1981-04-03 | Formation of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57164736A true JPS57164736A (en) | 1982-10-09 |
Family
ID=12853494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5024181A Pending JPS57164736A (en) | 1981-04-03 | 1981-04-03 | Formation of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57164736A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055630A (en) * | 1983-09-06 | 1985-03-30 | Oki Electric Ind Co Ltd | Method for forming resist pattern |
JPS62160446A (en) * | 1986-01-04 | 1987-07-16 | バスフ アクチェン ゲゼルシャフト | Manufacture of releaf block body crosslinked by photopolymerization |
JPH027056A (en) * | 1988-03-10 | 1990-01-11 | Basf Ag | Making of relief printing plate |
-
1981
- 1981-04-03 JP JP5024181A patent/JPS57164736A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055630A (en) * | 1983-09-06 | 1985-03-30 | Oki Electric Ind Co Ltd | Method for forming resist pattern |
JPH0335654B2 (en) * | 1983-09-06 | 1991-05-29 | Oki Electric Ind Co Ltd | |
JPS62160446A (en) * | 1986-01-04 | 1987-07-16 | バスフ アクチェン ゲゼルシャフト | Manufacture of releaf block body crosslinked by photopolymerization |
JPH027056A (en) * | 1988-03-10 | 1990-01-11 | Basf Ag | Making of relief printing plate |
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