JPS5543537A - Development process for o-naphthoquinonediazide type photoresist - Google Patents

Development process for o-naphthoquinonediazide type photoresist

Info

Publication number
JPS5543537A
JPS5543537A JP11637078A JP11637078A JPS5543537A JP S5543537 A JPS5543537 A JP S5543537A JP 11637078 A JP11637078 A JP 11637078A JP 11637078 A JP11637078 A JP 11637078A JP S5543537 A JPS5543537 A JP S5543537A
Authority
JP
Japan
Prior art keywords
formamide
ethanol
type photoresist
20vol
developed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11637078A
Other languages
Japanese (ja)
Other versions
JPS6051695B2 (en
Inventor
Hideki Fujiwara
Akira Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53116370A priority Critical patent/JPS6051695B2/en
Publication of JPS5543537A publication Critical patent/JPS5543537A/en
Publication of JPS6051695B2 publication Critical patent/JPS6051695B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/325Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To enable the same resist to be used both for positive and negative types, only by changing the proportion of a composition of a developing solution using formamide and ethanol. CONSTITUTION:In developing an o-naphthoquinonediazide type photoresist suitable for fabrication of a silicon semiconductor integrated circuit, the resist is developed to a positive image with a solution containing 80-100vol.% formamide, 0- 20vol.% ethanol, and 0-20vol.% water, while it is developed as a negative type with a solution containing 30-70vol.% formamide, 10-40vol.% ethanol, and 20-30vol.% water. Since this developer does not contain any metallic element, the electric characteristics of the semiconductor is not deteriorated by diffusion of metallic elements in an etching step. The solvents to be used have no toxicity and no operational trouble.
JP53116370A 1978-09-21 1978-09-21 O-naphthoquinone diazide photoresist development method Expired JPS6051695B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53116370A JPS6051695B2 (en) 1978-09-21 1978-09-21 O-naphthoquinone diazide photoresist development method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53116370A JPS6051695B2 (en) 1978-09-21 1978-09-21 O-naphthoquinone diazide photoresist development method

Publications (2)

Publication Number Publication Date
JPS5543537A true JPS5543537A (en) 1980-03-27
JPS6051695B2 JPS6051695B2 (en) 1985-11-15

Family

ID=14685286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53116370A Expired JPS6051695B2 (en) 1978-09-21 1978-09-21 O-naphthoquinone diazide photoresist development method

Country Status (1)

Country Link
JP (1) JPS6051695B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055630A (en) * 1983-09-06 1985-03-30 Oki Electric Ind Co Ltd Method for forming resist pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6055630A (en) * 1983-09-06 1985-03-30 Oki Electric Ind Co Ltd Method for forming resist pattern
JPH0335654B2 (en) * 1983-09-06 1991-05-29 Oki Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPS6051695B2 (en) 1985-11-15

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