JPS5610928A - Preparation of electronic device - Google Patents
Preparation of electronic deviceInfo
- Publication number
- JPS5610928A JPS5610928A JP8606479A JP8606479A JPS5610928A JP S5610928 A JPS5610928 A JP S5610928A JP 8606479 A JP8606479 A JP 8606479A JP 8606479 A JP8606479 A JP 8606479A JP S5610928 A JPS5610928 A JP S5610928A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- photomask
- pattern
- electronic device
- manufactured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 101100008047 Caenorhabditis elegans cut-3 gene Proteins 0.000 abstract 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To eliminate a loss of a substrate material to be used and to reduce the cost by making the shape of a photomask, which is placed on a single crystal wafer, circular when an integrated circuit and a bubble memory or the like are manufactured.
CONSTITUTION: When an electronic device such as IC is manufactured, a photomask that is provided with a fixed pattern is placed on a single crystal wafer, and the pattern is transferred to the wafer by using a photoresist. Here the photomask 1 is made circular, its diameter is selected in the range from 0.5W2.0 times the diameter of the wafer to which the pattern is to be transferred, and the orientation flat 2 or the cut 3 to set the wafer to the device is provided to a part of the edge of the wafer. In this way, a loss of the substrate material such as expensive quartz and sapphire to cut the mask 1 can be reduced, and a high practical effect can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8606479A JPS5610928A (en) | 1979-07-07 | 1979-07-07 | Preparation of electronic device |
FR8014710A FR2461282A1 (en) | 1979-07-07 | 1980-07-02 | IMPROVED PHOTOGRAVING PROCESS USING TRANSFER COVERS ON SINGLE-CRYSTAL PELLETS |
DE19803025488 DE3025488A1 (en) | 1979-07-07 | 1980-07-04 | PHOTOMASK, PHOTO ETCHING AND USE OF THE PHOTOMASK |
GB8022078A GB2054903A (en) | 1979-07-07 | 1980-07-04 | Masks for photoetching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8606479A JPS5610928A (en) | 1979-07-07 | 1979-07-07 | Preparation of electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5610928A true JPS5610928A (en) | 1981-02-03 |
Family
ID=13876262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8606479A Pending JPS5610928A (en) | 1979-07-07 | 1979-07-07 | Preparation of electronic device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5610928A (en) |
DE (1) | DE3025488A1 (en) |
FR (1) | FR2461282A1 (en) |
GB (1) | GB2054903A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5946026A (en) * | 1982-09-09 | 1984-03-15 | Toshiba Corp | Measuring method for position of sample |
JPH01278019A (en) * | 1988-04-28 | 1989-11-08 | Canon Inc | Structure of lithography mask |
DE19815295C2 (en) | 1998-04-06 | 2003-05-15 | Rheinmetall W & M Gmbh | Spin-stabilized artillery shell that can be fired from a gun barrel |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3892973A (en) * | 1974-02-15 | 1975-07-01 | Bell Telephone Labor Inc | Mask structure for X-ray lithography |
JPS5229063U (en) * | 1975-08-20 | 1977-03-01 | ||
US4080267A (en) * | 1975-12-29 | 1978-03-21 | International Business Machines Corporation | Method for forming thick self-supporting masks |
US4037111A (en) * | 1976-06-08 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Mask structures for X-ray lithography |
JPS53135278A (en) * | 1977-04-30 | 1978-11-25 | Mitsubishi Electric Corp | Photomask for photomechanics |
US4171489A (en) * | 1978-09-13 | 1979-10-16 | Bell Telephone Laboratories, Incorporated | Radiation mask structure |
US4253029A (en) * | 1979-05-23 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Mask structure for x-ray lithography |
-
1979
- 1979-07-07 JP JP8606479A patent/JPS5610928A/en active Pending
-
1980
- 1980-07-02 FR FR8014710A patent/FR2461282A1/en not_active Withdrawn
- 1980-07-04 DE DE19803025488 patent/DE3025488A1/en not_active Withdrawn
- 1980-07-04 GB GB8022078A patent/GB2054903A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2461282A1 (en) | 1981-01-30 |
GB2054903A (en) | 1981-02-18 |
DE3025488A1 (en) | 1981-02-26 |
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