JPS5610928A - Preparation of electronic device - Google Patents

Preparation of electronic device

Info

Publication number
JPS5610928A
JPS5610928A JP8606479A JP8606479A JPS5610928A JP S5610928 A JPS5610928 A JP S5610928A JP 8606479 A JP8606479 A JP 8606479A JP 8606479 A JP8606479 A JP 8606479A JP S5610928 A JPS5610928 A JP S5610928A
Authority
JP
Japan
Prior art keywords
wafer
photomask
pattern
electronic device
manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8606479A
Other languages
Japanese (ja)
Inventor
Mochio Tezuka
Haruo Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP8606479A priority Critical patent/JPS5610928A/en
Priority to FR8014710A priority patent/FR2461282A1/en
Priority to DE19803025488 priority patent/DE3025488A1/en
Priority to GB8022078A priority patent/GB2054903A/en
Publication of JPS5610928A publication Critical patent/JPS5610928A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To eliminate a loss of a substrate material to be used and to reduce the cost by making the shape of a photomask, which is placed on a single crystal wafer, circular when an integrated circuit and a bubble memory or the like are manufactured.
CONSTITUTION: When an electronic device such as IC is manufactured, a photomask that is provided with a fixed pattern is placed on a single crystal wafer, and the pattern is transferred to the wafer by using a photoresist. Here the photomask 1 is made circular, its diameter is selected in the range from 0.5W2.0 times the diameter of the wafer to which the pattern is to be transferred, and the orientation flat 2 or the cut 3 to set the wafer to the device is provided to a part of the edge of the wafer. In this way, a loss of the substrate material such as expensive quartz and sapphire to cut the mask 1 can be reduced, and a high practical effect can be obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP8606479A 1979-07-07 1979-07-07 Preparation of electronic device Pending JPS5610928A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8606479A JPS5610928A (en) 1979-07-07 1979-07-07 Preparation of electronic device
FR8014710A FR2461282A1 (en) 1979-07-07 1980-07-02 IMPROVED PHOTOGRAVING PROCESS USING TRANSFER COVERS ON SINGLE-CRYSTAL PELLETS
DE19803025488 DE3025488A1 (en) 1979-07-07 1980-07-04 PHOTOMASK, PHOTO ETCHING AND USE OF THE PHOTOMASK
GB8022078A GB2054903A (en) 1979-07-07 1980-07-04 Masks for photoetching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8606479A JPS5610928A (en) 1979-07-07 1979-07-07 Preparation of electronic device

Publications (1)

Publication Number Publication Date
JPS5610928A true JPS5610928A (en) 1981-02-03

Family

ID=13876262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8606479A Pending JPS5610928A (en) 1979-07-07 1979-07-07 Preparation of electronic device

Country Status (4)

Country Link
JP (1) JPS5610928A (en)
DE (1) DE3025488A1 (en)
FR (1) FR2461282A1 (en)
GB (1) GB2054903A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5946026A (en) * 1982-09-09 1984-03-15 Toshiba Corp Measuring method for position of sample
JPH01278019A (en) * 1988-04-28 1989-11-08 Canon Inc Structure of lithography mask
DE19815295C2 (en) 1998-04-06 2003-05-15 Rheinmetall W & M Gmbh Spin-stabilized artillery shell that can be fired from a gun barrel

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892973A (en) * 1974-02-15 1975-07-01 Bell Telephone Labor Inc Mask structure for X-ray lithography
JPS5229063U (en) * 1975-08-20 1977-03-01
US4080267A (en) * 1975-12-29 1978-03-21 International Business Machines Corporation Method for forming thick self-supporting masks
US4037111A (en) * 1976-06-08 1977-07-19 Bell Telephone Laboratories, Incorporated Mask structures for X-ray lithography
JPS53135278A (en) * 1977-04-30 1978-11-25 Mitsubishi Electric Corp Photomask for photomechanics
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4253029A (en) * 1979-05-23 1981-02-24 Bell Telephone Laboratories, Incorporated Mask structure for x-ray lithography

Also Published As

Publication number Publication date
FR2461282A1 (en) 1981-01-30
GB2054903A (en) 1981-02-18
DE3025488A1 (en) 1981-02-26

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