GB2054903A - Masks for photoetching - Google Patents
Masks for photoetching Download PDFInfo
- Publication number
- GB2054903A GB2054903A GB8022078A GB8022078A GB2054903A GB 2054903 A GB2054903 A GB 2054903A GB 8022078 A GB8022078 A GB 8022078A GB 8022078 A GB8022078 A GB 8022078A GB 2054903 A GB2054903 A GB 2054903A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photomask
- substantially circular
- photoetching
- pattern
- transparent support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000001259 photo etching Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
When making a component for an electronic device by a photoetching process, the desired pattern irradiation is provided using a substantially circular photomask (1) comprising a transparent support carrying a pattern. The mask may be provided with, for instance, an orientation flat (2) in its periphery. <IMAGE>
Description
SPECIFICATION
Improvements in Photoetching
The present invention relates to the photoetching involved in the manufacture of various kinds of electronic devices.
The manufacture of electronic devices such as integraged circuits and magnetic bubble memories generally involves at least one photoetching step for the purpose of providing on the substrate the particular fine structure that is required for the performance of the particular electronic device being made.
The photoetching procedure generally involves application of a thin layer of a photoresist, which may be either a negative or positive type photoresist, to the substrate to be etched, subjecting this to pattern-wise irradiation through a photomask, generally with ultraviolet or far ultraviolet light, so as to effect differential patternwise photocuring, removal with a developing solution of uncured photoresist material, and generally then etching of the exposed surface in the areas where the photoresist has been removed, the other areas of the surface being protected by the unremoved photoresist material.
For instance typically the process is applied to the etching of a Si02-coated surface of a wafer of single crystal of high purity silicon semiconductor.
The SiO2 coated surface is coated with the thin layer of photoresist and pattern-wise irradiation results in photocuring of the photoresist material in the areas of exposed to light. Upon treatment with the development solution the uncured photoresist material is dissolved while the cured material remains on the surface and protects the surface. The exposed, unprotected, surface may then be treated with hydrofluoric acid solution to dissolve the SiO2 layer and to expose the base silicon material, the remainder of the SiO2 layer being unaffected.
The photomask comprises a transparent substrate carrying a negative or positive of the pattern to be formed on the semiconductor.
Generally the transparent substrate is glass but other materials such as quartz and sapphire may be used instead.
Photomasks must frequently be washed or otherwise cleaned because their surface is liable to be contaminated by dust or other adhering dirty material. This washing is generally carried out while the mask is held in a special holder. When the mask is not in use it is stored in a special container.
Normally the wafer or other semiconductor substrate is circular or substantially circular but it is a remarkable fact that the photomasks used in the manufacutre of electronic devices have been made exclusively in the form of a square or rectangular photomasks. Because the masks have been rectangualr while the wafers have been substantially circular the masks have to be handled differently from the wafers and different types of holders and containers are required for the masks and the wafers.
A A photomask according to the invention for the
pattern-wise irradiation and subsequent
photoetching of a semiconductor substrate is one
in which the mask comprises a transparent
support carrying a pattern and is substantially
circular.
The photomasks are primarily intended for use
in the photoetching of single crystal wafers and
the invention includes a photoetching process of
manufacturing a component in an electronic device
and that comprises irradiating a single crystal
wafer with ultraviolet irradiation through a
substantially circular photomask that comprises a
transparent support carrying a pattern.
The ultraviolet irradiation may be ultraviolet
light of extremely short wave length, such as that
typically referred to as far ultraviolet.
The single crystal wafer material is preferably of silicon, generally coated with a layer of SiO2.
The transparent support may be of glass or
other hightly UV-transparent materials such as
quartz or sapphire.
The pattern may be whatever fine pattern is
required for the performance of the particular
electronic device being manufactured. The
elecronic device may be, for instance, an
integrated circuit or a magnetic bubble memory.
It is a remarkable fact that the photomasks
used and made previously have always been
rectangular (for instance square). The provision of
the substantially circular photomasks is very
advantageous, especially when the single crystal
wafer material is also substantially circular. Thus
the efficiency of the photoetching is enhanced and
the maintenance of the photomasks, for instance
washing and storing, is greatly simplified. No specific holders or containers are necessary since
the same holders or containers can be used as
those that are used for handling the circular
wafers.
In recent years there has been a requirement
for increasingly fine and precise transfer of the
pattern on the masks to the wafer, consistent with
the trend to ultra-miniaturisation of electronic devices. The required fine high fidelity transfer
necessitates the use of UV light of extremely short
wave length and consequently the use of a
photomask in which the transparent substrate is
transparent to such very short wave length light.
Highly UV-transparent materials such as quartz
and sapphire are thus preferred instead of glass
despite their high cost. Such materials are
generally produced initially in a rod-like boule
which is grown with a substantially circular cross
section. To make photomasks of the traditional
shape necessitates considerable wastage during
cutting, because of the losses arising due to
cutting masks of rectangular cross-section from a
circular cross-section material. As a result of the
invention the photomasks can more easily and
much more economically be made from such
circular cross-section materials.
The invention is illustrated in the accompanying
drawings each of which shows the outer profile of
a photomask according to the invention.
In each figure of the drawings there is shown a substantially circular photomask 1.
In Figure 1 the photomask is truly circular while in Figure 2 it is provided with an orientation flat 2 over part of the periphery. The flat or otherwise non-circular part of the periphery should be less than half the total periphery.
In Figure 3 the substantially circular photomask is provided with a notch 3 in the periphery.
The orientation flat 2 and the notch 3 are useful for facilitating exact mounting of the substantially circular photomask on an apparatus for patterntransfer.
The diameter of the photomask may be selected according to, for instance, the diameter of the wafer or the size of the pattern to be transferred. Generally the diameter of the mask is 0.5 to 2.0 times the diameter of the wafer.
Claims (8)
1. A photoetching process of manufacturing a component in an electronic device and that comprises irradiating a single crystal wafer material with ultraviolet irradiation through a substantially circular photomask that comprises a transparent support carrying a pattern.
2. A process according to claim 1 in which the photomask has at least one orientation flat or notch in its periphery.
3. A process according to claim 1 or claim 2 in which the wafer is substantially circular and the diameter of the photomask is 0.5 to 2 times the diameter of the wafer.
4. A process according to any preceding claim in which the transparent support is formed of quartz or sapphire.
5. A photomask for the pattem-wise irradiation and photoetching of a semiconductor substrate and which comprises a transparent support carrying a pattern and is substantially circular.
6. A photomask according to claim 5 in which there is at least one orientation flat or notch in the periphery of the mask.
7. A photomask according to claim 5 or claim 6 in which the transparent support is formed of quartz or sapphire.
8. A process according to claim 1 substantially as herein described with reference to any of the drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8606479A JPS5610928A (en) | 1979-07-07 | 1979-07-07 | Preparation of electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2054903A true GB2054903A (en) | 1981-02-18 |
Family
ID=13876262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8022078A Withdrawn GB2054903A (en) | 1979-07-07 | 1980-07-04 | Masks for photoetching |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5610928A (en) |
| DE (1) | DE3025488A1 (en) |
| FR (1) | FR2461282A1 (en) |
| GB (1) | GB2054903A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0105185A1 (en) * | 1982-09-09 | 1984-04-11 | Kabushiki Kaisha Toshiba | Target body position measuring method for charged particle beam fine pattern exposure system |
| US6237497B1 (en) | 1998-04-06 | 2001-05-29 | Rheinmetall W & M Gmbh | Spin-stabilized artillery projectile having gas pressure equalizing means |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01278019A (en) * | 1988-04-28 | 1989-11-08 | Canon Inc | Structure of lithography mask |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3892973A (en) * | 1974-02-15 | 1975-07-01 | Bell Telephone Labor Inc | Mask structure for X-ray lithography |
| JPS5229063U (en) * | 1975-08-20 | 1977-03-01 | ||
| US4080267A (en) * | 1975-12-29 | 1978-03-21 | International Business Machines Corporation | Method for forming thick self-supporting masks |
| US4037111A (en) * | 1976-06-08 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Mask structures for X-ray lithography |
| JPS53135278A (en) * | 1977-04-30 | 1978-11-25 | Mitsubishi Electric Corp | Photomask for photomechanics |
| US4171489A (en) * | 1978-09-13 | 1979-10-16 | Bell Telephone Laboratories, Incorporated | Radiation mask structure |
| US4253029A (en) * | 1979-05-23 | 1981-02-24 | Bell Telephone Laboratories, Incorporated | Mask structure for x-ray lithography |
-
1979
- 1979-07-07 JP JP8606479A patent/JPS5610928A/en active Pending
-
1980
- 1980-07-02 FR FR8014710A patent/FR2461282A1/en not_active Withdrawn
- 1980-07-04 DE DE19803025488 patent/DE3025488A1/en not_active Withdrawn
- 1980-07-04 GB GB8022078A patent/GB2054903A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0105185A1 (en) * | 1982-09-09 | 1984-04-11 | Kabushiki Kaisha Toshiba | Target body position measuring method for charged particle beam fine pattern exposure system |
| US4558225A (en) * | 1982-09-09 | 1985-12-10 | Tokyo Shibaura Denki Kabushiki Kaisha | Target body position measuring method for charged particle beam fine pattern exposure system |
| US6237497B1 (en) | 1998-04-06 | 2001-05-29 | Rheinmetall W & M Gmbh | Spin-stabilized artillery projectile having gas pressure equalizing means |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2461282A1 (en) | 1981-01-30 |
| JPS5610928A (en) | 1981-02-03 |
| DE3025488A1 (en) | 1981-02-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |