JPS5559459A - Resist developing solution and developing method - Google Patents
Resist developing solution and developing methodInfo
- Publication number
- JPS5559459A JPS5559459A JP13393278A JP13393278A JPS5559459A JP S5559459 A JPS5559459 A JP S5559459A JP 13393278 A JP13393278 A JP 13393278A JP 13393278 A JP13393278 A JP 13393278A JP S5559459 A JPS5559459 A JP S5559459A
- Authority
- JP
- Japan
- Prior art keywords
- developing solution
- developing
- ethyl alcohol
- resist
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To effectively remove the unexposed areas of poly-i-propyl-methacrylate type resist after imagewise exposure without scratching them using a developing solution consisting mainly of ethyl alcohol. CONSTITUTION:A solvent mixture of ethyl alcohol and an organic solvent (a low viscosity fluid having a boiling point within room temperature and 150 deg.C, and compatibility with ethyl alcohol, such as methyl alcohol, n-pentane, ethyl ether, or cyclohexane) is used for the developing solution of a poly-i-propylmethacrylate type resist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13393278A JPS5559459A (en) | 1978-10-30 | 1978-10-30 | Resist developing solution and developing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13393278A JPS5559459A (en) | 1978-10-30 | 1978-10-30 | Resist developing solution and developing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5559459A true JPS5559459A (en) | 1980-05-02 |
Family
ID=15116436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13393278A Pending JPS5559459A (en) | 1978-10-30 | 1978-10-30 | Resist developing solution and developing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5559459A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59176743A (en) * | 1983-03-26 | 1984-10-06 | Daikin Ind Ltd | Developing solution |
JPS6055630A (en) * | 1983-09-06 | 1985-03-30 | Oki Electric Ind Co Ltd | Method for forming resist pattern |
WO2017057253A1 (en) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | Treatment liquid and pattern formation method |
WO2017057225A1 (en) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | Processing solution and pattern forming method |
-
1978
- 1978-10-30 JP JP13393278A patent/JPS5559459A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59176743A (en) * | 1983-03-26 | 1984-10-06 | Daikin Ind Ltd | Developing solution |
JPH0332784B2 (en) * | 1983-03-26 | 1991-05-14 | Daikin Kogyo Kk | |
JPS6055630A (en) * | 1983-09-06 | 1985-03-30 | Oki Electric Ind Co Ltd | Method for forming resist pattern |
JPH0335654B2 (en) * | 1983-09-06 | 1991-05-29 | Oki Electric Ind Co Ltd | |
WO2017057253A1 (en) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | Treatment liquid and pattern formation method |
WO2017057225A1 (en) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | Processing solution and pattern forming method |
CN108139691A (en) * | 2015-09-30 | 2018-06-08 | 富士胶片株式会社 | Treatment fluid and pattern formation method |
JPWO2017057253A1 (en) * | 2015-09-30 | 2018-06-28 | 富士フイルム株式会社 | Treatment liquid and pattern forming method |
JPWO2017057225A1 (en) * | 2015-09-30 | 2018-06-28 | 富士フイルム株式会社 | Treatment liquid and pattern forming method |
US10962884B2 (en) | 2015-09-30 | 2021-03-30 | Fujifilm Corporation | Treatment liquid and pattern forming method |
US11042094B2 (en) | 2015-09-30 | 2021-06-22 | Fujifilm Corporation | Treatment liquid and pattern forming method |
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