JPS6488548A - Toner composition - Google Patents
Toner compositionInfo
- Publication number
- JPS6488548A JPS6488548A JP24658087A JP24658087A JPS6488548A JP S6488548 A JPS6488548 A JP S6488548A JP 24658087 A JP24658087 A JP 24658087A JP 24658087 A JP24658087 A JP 24658087A JP S6488548 A JPS6488548 A JP S6488548A
- Authority
- JP
- Japan
- Prior art keywords
- peeling
- water
- composition
- photoresist films
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
Abstract
PURPOSE:To facilitate peeling of highly hardened photoresist films and photoresist films subjected to heat treatment by using a composition comprising 10-30wt.% monoethanolamine, 30-60wt.% specified glycol monoalkyl ether, water of the rest. CONSTITUTION:The peeling agent composition is composed of 10-30wt.% monoethanolamine, the 30-60wt.% glycol monoalkyl ether represented by formula I in which R is 1-5C alkyl, and p is 1, 2, or 3, and water of the rest, thus permitting the obtained peeling agent to be made noncombustible by said composition containing water, superior in operability and safety, and also peeling performance of the photoresist and easily peel the photoresist films highly hardened by high-temperature baking, or by the RIE method and far ultraviolet exposure and the like at comparatively low temperature from the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62246580A JP2631849B2 (en) | 1987-09-30 | 1987-09-30 | Release agent composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62246580A JP2631849B2 (en) | 1987-09-30 | 1987-09-30 | Release agent composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6488548A true JPS6488548A (en) | 1989-04-03 |
JP2631849B2 JP2631849B2 (en) | 1997-07-16 |
Family
ID=17150533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62246580A Expired - Lifetime JP2631849B2 (en) | 1987-09-30 | 1987-09-30 | Release agent composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2631849B2 (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0457898A (en) * | 1990-06-27 | 1992-02-25 | Kao Corp | Aqueous detergent composition |
US5507978A (en) * | 1995-05-08 | 1996-04-16 | Ocg Microelectronic Materials, Inc. | Novolak containing photoresist stripper composition |
US5545353A (en) * | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
EP0788143A2 (en) | 1996-02-05 | 1997-08-06 | Mitsubishi Gas Chemical Company, Inc. | Method of producing semiconductor device and rinse for cleaning semiconductor device |
US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
JPH09298201A (en) * | 1996-04-30 | 1997-11-18 | Nec Corp | Method for forming wiring pattern |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US6265309B1 (en) | 1998-05-14 | 2001-07-24 | Mitsubishi Gas Chemicals Co., Inc. | Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same |
US6326130B1 (en) * | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
US6372050B2 (en) | 1997-05-05 | 2002-04-16 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
JP2017182049A (en) * | 2016-03-28 | 2017-10-05 | 三菱製紙株式会社 | Detachment method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57165834A (en) * | 1981-04-06 | 1982-10-13 | Hitachi Chem Co Ltd | Peeling solution for cured film of photopolymerizing composition |
JPS6026945A (en) * | 1983-07-25 | 1985-02-09 | ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− | Stripping composition and stripping of resist |
JPS6249355A (en) * | 1985-08-10 | 1987-03-04 | Nagase Sangyo Kk | Stripping agent composition |
-
1987
- 1987-09-30 JP JP62246580A patent/JP2631849B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57165834A (en) * | 1981-04-06 | 1982-10-13 | Hitachi Chem Co Ltd | Peeling solution for cured film of photopolymerizing composition |
JPS6026945A (en) * | 1983-07-25 | 1985-02-09 | ジエイ・テイ・ベ−カ−・ケミカル・カンパニ− | Stripping composition and stripping of resist |
JPS6249355A (en) * | 1985-08-10 | 1987-03-04 | Nagase Sangyo Kk | Stripping agent composition |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0457898A (en) * | 1990-06-27 | 1992-02-25 | Kao Corp | Aqueous detergent composition |
US6749998B2 (en) | 1993-10-07 | 2004-06-15 | Mallinckrodt Baker Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
US6326130B1 (en) * | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
US5597678A (en) * | 1994-04-18 | 1997-01-28 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5507978A (en) * | 1995-05-08 | 1996-04-16 | Ocg Microelectronic Materials, Inc. | Novolak containing photoresist stripper composition |
US5545353A (en) * | 1995-05-08 | 1996-08-13 | Ocg Microelectronic Materials, Inc. | Non-corrosive photoresist stripper composition |
US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
EP0788143A2 (en) | 1996-02-05 | 1997-08-06 | Mitsubishi Gas Chemical Company, Inc. | Method of producing semiconductor device and rinse for cleaning semiconductor device |
JPH09298201A (en) * | 1996-04-30 | 1997-11-18 | Nec Corp | Method for forming wiring pattern |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6020292A (en) * | 1996-09-06 | 2000-02-01 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US6191086B1 (en) | 1996-09-06 | 2001-02-20 | Arch Specialty Chemicals, Inc. | Cleaning composition and method for removing residues |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US6372050B2 (en) | 1997-05-05 | 2002-04-16 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6265309B1 (en) | 1998-05-14 | 2001-07-24 | Mitsubishi Gas Chemicals Co., Inc. | Cleaning agent for use in producing semiconductor devices and process for producing semiconductor devices using the same |
US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US7001874B2 (en) | 1999-11-15 | 2006-02-21 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US7402552B2 (en) | 1999-11-15 | 2008-07-22 | Fujifilm Electronic Materials U.S.A., Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
JP2017182049A (en) * | 2016-03-28 | 2017-10-05 | 三菱製紙株式会社 | Detachment method |
Also Published As
Publication number | Publication date |
---|---|
JP2631849B2 (en) | 1997-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20080425 |