JPS5564233A - Peeling solution for positive type photoresist - Google Patents

Peeling solution for positive type photoresist

Info

Publication number
JPS5564233A
JPS5564233A JP13624778A JP13624778A JPS5564233A JP S5564233 A JPS5564233 A JP S5564233A JP 13624778 A JP13624778 A JP 13624778A JP 13624778 A JP13624778 A JP 13624778A JP S5564233 A JPS5564233 A JP S5564233A
Authority
JP
Japan
Prior art keywords
peeling solution
positive type
type photoresist
trichloro
ethylene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13624778A
Other languages
Japanese (ja)
Inventor
Hideki Fujiwara
Akira Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13624778A priority Critical patent/JPS5564233A/en
Publication of JPS5564233A publication Critical patent/JPS5564233A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To form the peeling solution for positive type photoresist which is usable at room temperature by mixing the specific chlorinated aliphatic hydrocarbons and alkanol. CONSTITUTION:The peeling solution comprising mixing one or more kinds of 1, 1,1-trichloro-ethane, trichloro-ethylene, tetra chloro-ethylene; 30-90vol% and methanol, ethanol, n-(i) propanol, n-(i) butanol; 10-70vol% is prepared. The abovementioned peeling solution well dissolves the positive type photoresist, has no inflammability and corrosiveness and is low in toxicity.
JP13624778A 1978-11-07 1978-11-07 Peeling solution for positive type photoresist Pending JPS5564233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13624778A JPS5564233A (en) 1978-11-07 1978-11-07 Peeling solution for positive type photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13624778A JPS5564233A (en) 1978-11-07 1978-11-07 Peeling solution for positive type photoresist

Publications (1)

Publication Number Publication Date
JPS5564233A true JPS5564233A (en) 1980-05-14

Family

ID=15170719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13624778A Pending JPS5564233A (en) 1978-11-07 1978-11-07 Peeling solution for positive type photoresist

Country Status (1)

Country Link
JP (1) JPS5564233A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095171A2 (en) * 1982-05-24 1983-11-30 Daikin Kogyo Co., Ltd. Composition for cleaning surface of substrate
JPS59232154A (en) * 1983-06-15 1984-12-26 Toagosei Chem Ind Co Ltd Composition for cleaning resist ink
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US6379576B2 (en) 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095171A2 (en) * 1982-05-24 1983-11-30 Daikin Kogyo Co., Ltd. Composition for cleaning surface of substrate
JPS59232154A (en) * 1983-06-15 1984-12-26 Toagosei Chem Ind Co Ltd Composition for cleaning resist ink
JPH0244343B2 (en) * 1983-06-15 1990-10-03 Toa Gosei Chem Ind
US5824604A (en) * 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US6379576B2 (en) 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers

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