JPS6054279B2 - 高度の平滑性を有するエピタキシヤル結晶成長方法 - Google Patents

高度の平滑性を有するエピタキシヤル結晶成長方法

Info

Publication number
JPS6054279B2
JPS6054279B2 JP51142367A JP14236776A JPS6054279B2 JP S6054279 B2 JPS6054279 B2 JP S6054279B2 JP 51142367 A JP51142367 A JP 51142367A JP 14236776 A JP14236776 A JP 14236776A JP S6054279 B2 JPS6054279 B2 JP S6054279B2
Authority
JP
Japan
Prior art keywords
substrate
angle
layer
growth
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51142367A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5268079A (en
Inventor
レオン ロード ダニエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5268079A publication Critical patent/JPS5268079A/ja
Publication of JPS6054279B2 publication Critical patent/JPS6054279B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Led Devices (AREA)
JP51142367A 1975-12-01 1976-11-29 高度の平滑性を有するエピタキシヤル結晶成長方法 Expired JPS6054279B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US63656475A 1975-12-01 1975-12-01
US636564 1975-12-01
US660472 1976-02-23
US05/660,472 US4050964A (en) 1975-12-01 1976-02-23 Growing smooth epitaxial layers on misoriented substrates

Publications (2)

Publication Number Publication Date
JPS5268079A JPS5268079A (en) 1977-06-06
JPS6054279B2 true JPS6054279B2 (ja) 1985-11-29

Family

ID=27092638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51142367A Expired JPS6054279B2 (ja) 1975-12-01 1976-11-29 高度の平滑性を有するエピタキシヤル結晶成長方法

Country Status (6)

Country Link
US (1) US4050964A (enExample)
JP (1) JPS6054279B2 (enExample)
DE (1) DE2653532C2 (enExample)
FR (1) FR2333567A1 (enExample)
GB (1) GB1561177A (enExample)
IT (1) IT1069886B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2641347C2 (de) * 1976-09-14 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von epitaxialen Schichten auf einkristallinen Substraten
DE2817797A1 (de) * 1978-04-22 1979-10-25 Massachusetts Inst Technology Substrat mit filmartiger oberschicht und verfahren zur verbesserung der epitaxie bei der filmbildung auf einem festen substrat
NL7905544A (nl) * 1979-03-01 1980-09-03 Philips Nv Werkwijze voor het vormen van een monokristallijne laag van een oxydisch materiaal met spinel of granaat- structuur op een substraat.
DE2910723A1 (de) * 1979-03-19 1980-09-25 Siemens Ag Verfahren zum herstellen von epitaktischen halbleitermaterialschichten auf einkristallinen substraten nach der fluessigphasen-schiebe-epitaxie
US4540450A (en) * 1982-06-02 1985-09-10 The United States Of America As Represented By The Secretary Of The Air Force InP:Te Protective layer process for reducing substrate dissociation
US4523318A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser having high manufacturing yield
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices
US5279701A (en) * 1988-05-11 1994-01-18 Sharp Kabushiki Kaisha Method for the growth of silicon carbide single crystals
US5230768A (en) * 1990-03-26 1993-07-27 Sharp Kabushiki Kaisha Method for the production of SiC single crystals by using a specific substrate crystal orientation
JPH03278542A (ja) * 1990-03-28 1991-12-10 Hitachi Ltd 半導体装置
US6229197B1 (en) * 1993-04-30 2001-05-08 Texas Instruments Incorporated Epitaxial overgrowth method and devices
US5762706A (en) * 1993-11-09 1998-06-09 Fujitsu Limited Method of forming compound semiconductor device
US6188090B1 (en) * 1995-08-31 2001-02-13 Fujitsu Limited Semiconductor device having a heteroepitaxial substrate
JP2914246B2 (ja) * 1995-10-12 1999-06-28 昭和電工株式会社 エピタキシャルウエハおよび半導体発光素子

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284785A (enExample) * 1961-10-27
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
NL295293A (enExample) * 1962-07-13
DE1544233A1 (de) * 1963-09-26 1970-10-22 Nippon Electric Co Epitaxial-Aufwachsverfahren fuer Halbleiterkristalle
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
US3471324A (en) * 1966-12-23 1969-10-07 Texas Instruments Inc Epitaxial gallium arsenide
CH532959A (de) * 1967-10-20 1973-01-31 Philips Nv Verfahren zum Kristallisieren einer binären Halbleiterverbindung
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
JPS4847272A (enExample) * 1971-10-18 1973-07-05
JPS537397B2 (enExample) * 1971-12-28 1978-03-17
JPS5032901B2 (enExample) * 1972-04-28 1975-10-25
JPS5438599B2 (enExample) * 1973-02-15 1979-11-21
US3899371A (en) * 1973-06-25 1975-08-12 Rca Corp Method of forming PN junctions by liquid phase epitaxy
JPS5134666A (en) * 1974-09-19 1976-03-24 Tokyo Shibaura Electric Co 335 zokukagobutsuhandotai no kisoseichohoho

Also Published As

Publication number Publication date
FR2333567B1 (enExample) 1981-09-04
GB1561177A (en) 1980-02-13
FR2333567A1 (fr) 1977-07-01
JPS5268079A (en) 1977-06-06
DE2653532A1 (de) 1977-06-02
IT1069886B (it) 1985-03-25
US4050964A (en) 1977-09-27
DE2653532C2 (de) 1985-11-07

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