JPS6052996A - センスアンプ回路 - Google Patents

センスアンプ回路

Info

Publication number
JPS6052996A
JPS6052996A JP58160263A JP16026383A JPS6052996A JP S6052996 A JPS6052996 A JP S6052996A JP 58160263 A JP58160263 A JP 58160263A JP 16026383 A JP16026383 A JP 16026383A JP S6052996 A JPS6052996 A JP S6052996A
Authority
JP
Japan
Prior art keywords
transistor
transistors
voltage
gate
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58160263A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0159679B2 (enrdf_load_stackoverflow
Inventor
Hideji Koike
秀治 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58160263A priority Critical patent/JPS6052996A/ja
Publication of JPS6052996A publication Critical patent/JPS6052996A/ja
Publication of JPH0159679B2 publication Critical patent/JPH0159679B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)
JP58160263A 1983-09-02 1983-09-02 センスアンプ回路 Granted JPS6052996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58160263A JPS6052996A (ja) 1983-09-02 1983-09-02 センスアンプ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58160263A JPS6052996A (ja) 1983-09-02 1983-09-02 センスアンプ回路

Publications (2)

Publication Number Publication Date
JPS6052996A true JPS6052996A (ja) 1985-03-26
JPH0159679B2 JPH0159679B2 (enrdf_load_stackoverflow) 1989-12-19

Family

ID=15711218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58160263A Granted JPS6052996A (ja) 1983-09-02 1983-09-02 センスアンプ回路

Country Status (1)

Country Link
JP (1) JPS6052996A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory

Also Published As

Publication number Publication date
JPH0159679B2 (enrdf_load_stackoverflow) 1989-12-19

Similar Documents

Publication Publication Date Title
US4636742A (en) Constant-current source circuit and differential amplifier using the same
EP0601540A1 (en) Reference voltage generator of a band-gap regulator type used in CMOS transistor circuit
JPS58116817A (ja) Ttl−cmos入力バツフア
JP3476363B2 (ja) バンドギャップ型基準電圧発生回路
US4460985A (en) Sense amplifier for MOS static memory array
JPS5822423A (ja) 基準電圧発生回路
KR0126911B1 (ko) 기준전압 발생회로 및 발생방법
EP1505467A2 (en) Voltage reference generator providing an output voltage lower than the bandgap voltage
US4464591A (en) Current difference sense amplifier
JPH0498173A (ja) 半導体回路
JPH088481B2 (ja) Cmos入力バッファ回路
JPS6052996A (ja) センスアンプ回路
JPS583325A (ja) インバ−タ回路
US5412607A (en) Semiconductor memory device
US4469960A (en) Voltage translating circuit
US5229709A (en) Integrated circuit with temperature compensation
JPS632193A (ja) センスアンプ回路
JPH06197001A (ja) レベル変換回路
JPH086653A (ja) レファレンス電圧発生回路
JP3299551B2 (ja) 集積回路
JP3245914B2 (ja) 差動電圧比較回路
JPS62213318A (ja) 増幅回路
JP2748477B2 (ja) 定電圧発生回路
JPH0210917A (ja) Mosトランジスタのしきい値電圧発生回路
JPH05174594A (ja) 半導体記憶装置