JPS6049681A - 半導体受光装置 - Google Patents
半導体受光装置Info
- Publication number
- JPS6049681A JPS6049681A JP58157366A JP15736683A JPS6049681A JP S6049681 A JPS6049681 A JP S6049681A JP 58157366 A JP58157366 A JP 58157366A JP 15736683 A JP15736683 A JP 15736683A JP S6049681 A JPS6049681 A JP S6049681A
- Authority
- JP
- Japan
- Prior art keywords
- superlattice structure
- semiconductor
- type
- layer
- layer superlattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 12
- 230000031700 light absorption Effects 0.000 claims description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58157366A JPS6049681A (ja) | 1983-08-29 | 1983-08-29 | 半導体受光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58157366A JPS6049681A (ja) | 1983-08-29 | 1983-08-29 | 半導体受光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6049681A true JPS6049681A (ja) | 1985-03-18 |
JPH051629B2 JPH051629B2 (ko) | 1993-01-08 |
Family
ID=15648080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58157366A Granted JPS6049681A (ja) | 1983-08-29 | 1983-08-29 | 半導体受光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6049681A (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639162A (ja) * | 1986-06-27 | 1988-01-14 | アメリカン テレフォン アンド テレグラフ カムパニー | 超格子を含む半導体デバイス及びその制御法 |
JPH0290575A (ja) * | 1988-09-28 | 1990-03-30 | Hitachi Ltd | 半導体受光素子 |
EP0437633A1 (en) * | 1989-08-04 | 1991-07-24 | Canon Kabushiki Kaisha | Photo-electric converter |
US5471068A (en) * | 1991-03-28 | 1995-11-28 | Nec Corporation | Semiconductor photodetector using avalanche multiplication and strained layers |
US6326650B1 (en) | 1995-08-03 | 2001-12-04 | Jeremy Allam | Method of forming a semiconductor structure |
EP1435666A3 (en) * | 2002-12-10 | 2008-12-31 | General Electric Company | Avalanche photodiode for use in harsh environments |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5580375A (en) * | 1978-12-13 | 1980-06-17 | Nippon Telegr & Teleph Corp <Ntt> | Compound semiconductor photoreceptor |
JPS6016474A (ja) * | 1983-07-08 | 1985-01-28 | Nec Corp | ヘテロ多重接合型光検出器 |
-
1983
- 1983-08-29 JP JP58157366A patent/JPS6049681A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5580375A (en) * | 1978-12-13 | 1980-06-17 | Nippon Telegr & Teleph Corp <Ntt> | Compound semiconductor photoreceptor |
JPS6016474A (ja) * | 1983-07-08 | 1985-01-28 | Nec Corp | ヘテロ多重接合型光検出器 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639162A (ja) * | 1986-06-27 | 1988-01-14 | アメリカン テレフォン アンド テレグラフ カムパニー | 超格子を含む半導体デバイス及びその制御法 |
JPH0290575A (ja) * | 1988-09-28 | 1990-03-30 | Hitachi Ltd | 半導体受光素子 |
EP0437633A1 (en) * | 1989-08-04 | 1991-07-24 | Canon Kabushiki Kaisha | Photo-electric converter |
EP0437633B1 (en) * | 1989-08-04 | 2000-11-02 | Canon Kabushiki Kaisha | Photo-electric converter |
US5471068A (en) * | 1991-03-28 | 1995-11-28 | Nec Corporation | Semiconductor photodetector using avalanche multiplication and strained layers |
US6326650B1 (en) | 1995-08-03 | 2001-12-04 | Jeremy Allam | Method of forming a semiconductor structure |
US6436784B1 (en) | 1995-08-03 | 2002-08-20 | Hitachi Europe Limited | Method of forming semiconductor structure |
EP1435666A3 (en) * | 2002-12-10 | 2008-12-31 | General Electric Company | Avalanche photodiode for use in harsh environments |
KR101025186B1 (ko) | 2002-12-10 | 2011-03-31 | 제너럴 일렉트릭 캄파니 | 거친 환경에 사용하기 위한 애벌런치 포토다이오드 |
Also Published As
Publication number | Publication date |
---|---|
JPH051629B2 (ko) | 1993-01-08 |
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