JPS6039862A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法

Info

Publication number
JPS6039862A
JPS6039862A JP58146656A JP14665683A JPS6039862A JP S6039862 A JPS6039862 A JP S6039862A JP 58146656 A JP58146656 A JP 58146656A JP 14665683 A JP14665683 A JP 14665683A JP S6039862 A JPS6039862 A JP S6039862A
Authority
JP
Japan
Prior art keywords
silicon substrate
groove
main surface
capacitor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58146656A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0311550B2 (enExample
Inventor
Kazushige Minegishi
峯岸　一茂
Takashi Morie
隆 森江
Ban Nakajima
中島　蕃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58146656A priority Critical patent/JPS6039862A/ja
Publication of JPS6039862A publication Critical patent/JPS6039862A/ja
Publication of JPH0311550B2 publication Critical patent/JPH0311550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58146656A 1983-08-12 1983-08-12 半導体記憶装置およびその製造方法 Granted JPS6039862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58146656A JPS6039862A (ja) 1983-08-12 1983-08-12 半導体記憶装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58146656A JPS6039862A (ja) 1983-08-12 1983-08-12 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6039862A true JPS6039862A (ja) 1985-03-01
JPH0311550B2 JPH0311550B2 (enExample) 1991-02-18

Family

ID=15412652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58146656A Granted JPS6039862A (ja) 1983-08-12 1983-08-12 半導体記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6039862A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156446A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置およびその製造方法
JPS62293758A (ja) * 1986-06-13 1987-12-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6156446A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置およびその製造方法
JPS62293758A (ja) * 1986-06-13 1987-12-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH0311550B2 (enExample) 1991-02-18

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