JPS60261105A - 厚膜型正特性半導体素子の製造方法 - Google Patents
厚膜型正特性半導体素子の製造方法Info
- Publication number
- JPS60261105A JPS60261105A JP11701984A JP11701984A JPS60261105A JP S60261105 A JPS60261105 A JP S60261105A JP 11701984 A JP11701984 A JP 11701984A JP 11701984 A JP11701984 A JP 11701984A JP S60261105 A JPS60261105 A JP S60261105A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- positive temperature
- semiconductor element
- batio3
- temperature coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 10
- 239000000843 powder Substances 0.000 claims description 20
- 229910002113 barium titanate Inorganic materials 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 18
- 239000011521 glass Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 12
- 239000002482 conductive additive Substances 0.000 description 7
- 230000035939 shock Effects 0.000 description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 3
- 229940088601 alpha-terpineol Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11701984A JPS60261105A (ja) | 1984-06-07 | 1984-06-07 | 厚膜型正特性半導体素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11701984A JPS60261105A (ja) | 1984-06-07 | 1984-06-07 | 厚膜型正特性半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60261105A true JPS60261105A (ja) | 1985-12-24 |
JPH0534804B2 JPH0534804B2 (enrdf_load_stackoverflow) | 1993-05-25 |
Family
ID=14701429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11701984A Granted JPS60261105A (ja) | 1984-06-07 | 1984-06-07 | 厚膜型正特性半導体素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60261105A (enrdf_load_stackoverflow) |
-
1984
- 1984-06-07 JP JP11701984A patent/JPS60261105A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0534804B2 (enrdf_load_stackoverflow) | 1993-05-25 |
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