JPS60258979A - 半導体光検出装置 - Google Patents

半導体光検出装置

Info

Publication number
JPS60258979A
JPS60258979A JP60086358A JP8635885A JPS60258979A JP S60258979 A JPS60258979 A JP S60258979A JP 60086358 A JP60086358 A JP 60086358A JP 8635885 A JP8635885 A JP 8635885A JP S60258979 A JPS60258979 A JP S60258979A
Authority
JP
Japan
Prior art keywords
semiconductor
region
junction
silicon
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60086358A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6229916B2 (enrdf_load_stackoverflow
Inventor
Hirobumi Ouchi
博文 大内
Masahiro Okamura
岡村　昌弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60086358A priority Critical patent/JPS60258979A/ja
Publication of JPS60258979A publication Critical patent/JPS60258979A/ja
Publication of JPS6229916B2 publication Critical patent/JPS6229916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

Landscapes

  • Light Receiving Elements (AREA)
JP60086358A 1985-04-24 1985-04-24 半導体光検出装置 Granted JPS60258979A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60086358A JPS60258979A (ja) 1985-04-24 1985-04-24 半導体光検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60086358A JPS60258979A (ja) 1985-04-24 1985-04-24 半導体光検出装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51090289A Division JPS5938748B2 (ja) 1976-07-30 1976-07-30 半導体光検出装置

Publications (2)

Publication Number Publication Date
JPS60258979A true JPS60258979A (ja) 1985-12-20
JPS6229916B2 JPS6229916B2 (enrdf_load_stackoverflow) 1987-06-29

Family

ID=13884666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60086358A Granted JPS60258979A (ja) 1985-04-24 1985-04-24 半導体光検出装置

Country Status (1)

Country Link
JP (1) JPS60258979A (enrdf_load_stackoverflow)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4995867U (enrdf_load_stackoverflow) * 1972-12-12 1974-08-19
JPS5051285A (enrdf_load_stackoverflow) * 1973-09-05 1975-05-08
US3889284A (en) * 1974-01-15 1975-06-10 Us Army Avalanche photodiode with varying bandgap
JPS53120289A (en) * 1977-03-30 1978-10-20 Toshiba Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4995867U (enrdf_load_stackoverflow) * 1972-12-12 1974-08-19
JPS5051285A (enrdf_load_stackoverflow) * 1973-09-05 1975-05-08
US3889284A (en) * 1974-01-15 1975-06-10 Us Army Avalanche photodiode with varying bandgap
JPS53120289A (en) * 1977-03-30 1978-10-20 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6229916B2 (enrdf_load_stackoverflow) 1987-06-29

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