JPS6229916B2 - - Google Patents
Info
- Publication number
- JPS6229916B2 JPS6229916B2 JP60086358A JP8635885A JPS6229916B2 JP S6229916 B2 JPS6229916 B2 JP S6229916B2 JP 60086358 A JP60086358 A JP 60086358A JP 8635885 A JP8635885 A JP 8635885A JP S6229916 B2 JPS6229916 B2 JP S6229916B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- junction
- silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086358A JPS60258979A (ja) | 1985-04-24 | 1985-04-24 | 半導体光検出装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60086358A JPS60258979A (ja) | 1985-04-24 | 1985-04-24 | 半導体光検出装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51090289A Division JPS5938748B2 (ja) | 1976-07-30 | 1976-07-30 | 半導体光検出装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60258979A JPS60258979A (ja) | 1985-12-20 |
| JPS6229916B2 true JPS6229916B2 (enrdf_load_stackoverflow) | 1987-06-29 |
Family
ID=13884666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60086358A Granted JPS60258979A (ja) | 1985-04-24 | 1985-04-24 | 半導体光検出装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60258979A (enrdf_load_stackoverflow) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5230848Y2 (enrdf_load_stackoverflow) * | 1972-12-12 | 1977-07-14 | ||
| JPS5051285A (enrdf_load_stackoverflow) * | 1973-09-05 | 1975-05-08 | ||
| US3889284A (en) * | 1974-01-15 | 1975-06-10 | Us Army | Avalanche photodiode with varying bandgap |
| JPS53120289A (en) * | 1977-03-30 | 1978-10-20 | Toshiba Corp | Manufacture of semiconductor device |
-
1985
- 1985-04-24 JP JP60086358A patent/JPS60258979A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60258979A (ja) | 1985-12-20 |