JPS60249334A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS60249334A
JPS60249334A JP59104717A JP10471784A JPS60249334A JP S60249334 A JPS60249334 A JP S60249334A JP 59104717 A JP59104717 A JP 59104717A JP 10471784 A JP10471784 A JP 10471784A JP S60249334 A JPS60249334 A JP S60249334A
Authority
JP
Japan
Prior art keywords
film
substrate
thin film
photoresist
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59104717A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0156525B2 (en:Method
Inventor
Yasuhiro Mochizuki
康弘 望月
Takaya Suzuki
誉也 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59104717A priority Critical patent/JPS60249334A/ja
Publication of JPS60249334A publication Critical patent/JPS60249334A/ja
Publication of JPH0156525B2 publication Critical patent/JPH0156525B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/06—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
JP59104717A 1984-05-25 1984-05-25 薄膜形成方法 Granted JPS60249334A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59104717A JPS60249334A (ja) 1984-05-25 1984-05-25 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59104717A JPS60249334A (ja) 1984-05-25 1984-05-25 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS60249334A true JPS60249334A (ja) 1985-12-10
JPH0156525B2 JPH0156525B2 (en:Method) 1989-11-30

Family

ID=14388234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59104717A Granted JPS60249334A (ja) 1984-05-25 1984-05-25 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS60249334A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102534A (ja) * 1988-10-11 1990-04-16 Nec Corp 半導体装置の形成方法
JPH0697158A (ja) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd 光気相反応方法
KR20160052329A (ko) * 2014-10-29 2016-05-12 도쿄엘렉트론가부시키가이샤 선택 성장 방법 및 기판 처리 장치

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102534A (ja) * 1988-10-11 1990-04-16 Nec Corp 半導体装置の形成方法
JPH0697158A (ja) * 1991-09-12 1994-04-08 Semiconductor Energy Lab Co Ltd 光気相反応方法
KR20160052329A (ko) * 2014-10-29 2016-05-12 도쿄엘렉트론가부시키가이샤 선택 성장 방법 및 기판 처리 장치
JP2016086145A (ja) * 2014-10-29 2016-05-19 東京エレクトロン株式会社 選択成長方法および基板処理装置

Also Published As

Publication number Publication date
JPH0156525B2 (en:Method) 1989-11-30

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