JPS60246299A - タンタル酸リチウム単結晶ウエハーの製造方法 - Google Patents

タンタル酸リチウム単結晶ウエハーの製造方法

Info

Publication number
JPS60246299A
JPS60246299A JP60084417A JP8441785A JPS60246299A JP S60246299 A JPS60246299 A JP S60246299A JP 60084417 A JP60084417 A JP 60084417A JP 8441785 A JP8441785 A JP 8441785A JP S60246299 A JPS60246299 A JP S60246299A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
lithium tantalate
wafer
cylindrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60084417A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6232160B2 (cs
Inventor
Tsuguo Fukuda
承生 福田
Hitoshi Hirano
均 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60084417A priority Critical patent/JPS60246299A/ja
Publication of JPS60246299A publication Critical patent/JPS60246299A/ja
Publication of JPS6232160B2 publication Critical patent/JPS6232160B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60084417A 1985-04-22 1985-04-22 タンタル酸リチウム単結晶ウエハーの製造方法 Granted JPS60246299A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60084417A JPS60246299A (ja) 1985-04-22 1985-04-22 タンタル酸リチウム単結晶ウエハーの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60084417A JPS60246299A (ja) 1985-04-22 1985-04-22 タンタル酸リチウム単結晶ウエハーの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51119417A Division JPS6051280B2 (ja) 1976-10-06 1976-10-06 タンタル酸リチウム単結晶ウエハ−の製造方法

Publications (2)

Publication Number Publication Date
JPS60246299A true JPS60246299A (ja) 1985-12-05
JPS6232160B2 JPS6232160B2 (cs) 1987-07-13

Family

ID=13830009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60084417A Granted JPS60246299A (ja) 1985-04-22 1985-04-22 タンタル酸リチウム単結晶ウエハーの製造方法

Country Status (1)

Country Link
JP (1) JPS60246299A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100496526B1 (ko) * 2002-09-25 2005-06-22 일진디스플레이(주) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345187A (en) * 1976-10-06 1978-04-22 Toshiba Corp Wafer production of oxide piezoelectric material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345187A (en) * 1976-10-06 1978-04-22 Toshiba Corp Wafer production of oxide piezoelectric material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100496526B1 (ko) * 2002-09-25 2005-06-22 일진디스플레이(주) 표면 탄성파 소자용 탄탈산 리튬 단결정 기판의 제조방법

Also Published As

Publication number Publication date
JPS6232160B2 (cs) 1987-07-13

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