JPS6024589B2 - 相補型絶縁ゲート電界効果トランジスタの製造方法 - Google Patents

相補型絶縁ゲート電界効果トランジスタの製造方法

Info

Publication number
JPS6024589B2
JPS6024589B2 JP49022796A JP2279674A JPS6024589B2 JP S6024589 B2 JPS6024589 B2 JP S6024589B2 JP 49022796 A JP49022796 A JP 49022796A JP 2279674 A JP2279674 A JP 2279674A JP S6024589 B2 JPS6024589 B2 JP S6024589B2
Authority
JP
Japan
Prior art keywords
insulating film
region
forming
source
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49022796A
Other languages
English (en)
Japanese (ja)
Other versions
JPS50116275A (cg-RX-API-DMAC7.html
Inventor
三彦 上野
正孝 平沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP49022796A priority Critical patent/JPS6024589B2/ja
Priority to US05/554,152 priority patent/US3986896A/en
Priority to GB8370/75A priority patent/GB1503017A/en
Publication of JPS50116275A publication Critical patent/JPS50116275A/ja
Publication of JPS6024589B2 publication Critical patent/JPS6024589B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP49022796A 1974-02-28 1974-02-28 相補型絶縁ゲート電界効果トランジスタの製造方法 Expired JPS6024589B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP49022796A JPS6024589B2 (ja) 1974-02-28 1974-02-28 相補型絶縁ゲート電界効果トランジスタの製造方法
US05/554,152 US3986896A (en) 1974-02-28 1975-02-28 Method of manufacturing semiconductor devices
GB8370/75A GB1503017A (en) 1974-02-28 1975-02-28 Method of manufacturing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49022796A JPS6024589B2 (ja) 1974-02-28 1974-02-28 相補型絶縁ゲート電界効果トランジスタの製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP5238178A Division JPS53149777A (en) 1978-05-02 1978-05-02 Manufacture of integrated-circuit device
JP57055304A Division JPS57197852A (en) 1982-04-05 1982-04-05 Manufacture of complementary type insulating gate field-effect transistor

Publications (2)

Publication Number Publication Date
JPS50116275A JPS50116275A (cg-RX-API-DMAC7.html) 1975-09-11
JPS6024589B2 true JPS6024589B2 (ja) 1985-06-13

Family

ID=12092629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49022796A Expired JPS6024589B2 (ja) 1974-02-28 1974-02-28 相補型絶縁ゲート電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6024589B2 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249360A (ja) * 1984-05-24 1985-12-10 Seiko Instr & Electronics Ltd 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917688A (cg-RX-API-DMAC7.html) * 1972-06-05 1974-02-16

Also Published As

Publication number Publication date
JPS50116275A (cg-RX-API-DMAC7.html) 1975-09-11

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