JPS60240158A - 半導体回路 - Google Patents

半導体回路

Info

Publication number
JPS60240158A
JPS60240158A JP9794084A JP9794084A JPS60240158A JP S60240158 A JPS60240158 A JP S60240158A JP 9794084 A JP9794084 A JP 9794084A JP 9794084 A JP9794084 A JP 9794084A JP S60240158 A JPS60240158 A JP S60240158A
Authority
JP
Japan
Prior art keywords
control transistor
emitter
generator
voltage
semiconductor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9794084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0378787B2 (nl
Inventor
Tatsu Araki
荒木　達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9794084A priority Critical patent/JPS60240158A/ja
Publication of JPS60240158A publication Critical patent/JPS60240158A/ja
Publication of JPH0378787B2 publication Critical patent/JPH0378787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP9794084A 1984-05-14 1984-05-14 半導体回路 Granted JPS60240158A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9794084A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9794084A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Publications (2)

Publication Number Publication Date
JPS60240158A true JPS60240158A (ja) 1985-11-29
JPH0378787B2 JPH0378787B2 (nl) 1991-12-16

Family

ID=14205659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9794084A Granted JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Country Status (1)

Country Link
JP (1) JPS60240158A (nl)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011008919A1 (en) * 2009-07-15 2011-01-20 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9231122B2 (en) 2011-09-11 2016-01-05 Cree, Inc. Schottky diode
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9548374B2 (en) 2006-08-17 2017-01-17 Cree, Inc. High power insulated gate bipolar transistors
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9673283B2 (en) 2011-05-06 2017-06-06 Cree, Inc. Power module for supporting high current densities

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9548374B2 (en) 2006-08-17 2017-01-17 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9064840B2 (en) 2007-02-27 2015-06-23 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9478537B2 (en) 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
WO2011008919A1 (en) * 2009-07-15 2011-01-20 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9595618B2 (en) 2010-03-08 2017-03-14 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9673283B2 (en) 2011-05-06 2017-06-06 Cree, Inc. Power module for supporting high current densities
US9231122B2 (en) 2011-09-11 2016-01-05 Cree, Inc. Schottky diode
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9865750B2 (en) 2011-09-11 2018-01-09 Cree, Inc. Schottky diode
US10141302B2 (en) 2011-09-11 2018-11-27 Cree, Inc. High current, low switching loss SiC power module
US10153364B2 (en) 2011-09-11 2018-12-11 Cree, Inc. Power module having a switch module for supporting high current densities
US11024731B2 (en) 2011-09-11 2021-06-01 Cree, Inc. Power module for supporting high current densities
US11171229B2 (en) 2011-09-11 2021-11-09 Cree, Inc. Low switching loss high performance power module

Also Published As

Publication number Publication date
JPH0378787B2 (nl) 1991-12-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term