JPH0378787B2 - - Google Patents
Info
- Publication number
- JPH0378787B2 JPH0378787B2 JP9794084A JP9794084A JPH0378787B2 JP H0378787 B2 JPH0378787 B2 JP H0378787B2 JP 9794084 A JP9794084 A JP 9794084A JP 9794084 A JP9794084 A JP 9794084A JP H0378787 B2 JPH0378787 B2 JP H0378787B2
- Authority
- JP
- Japan
- Prior art keywords
- control transistor
- emitter
- diffusion layer
- semiconductor circuit
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 30
- 230000015556 catabolic process Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9794084A JPS60240158A (ja) | 1984-05-14 | 1984-05-14 | 半導体回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9794084A JPS60240158A (ja) | 1984-05-14 | 1984-05-14 | 半導体回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60240158A JPS60240158A (ja) | 1985-11-29 |
JPH0378787B2 true JPH0378787B2 (nl) | 1991-12-16 |
Family
ID=14205659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9794084A Granted JPS60240158A (ja) | 1984-05-14 | 1984-05-14 | 半導体回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60240158A (nl) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2631951B1 (en) | 2006-08-17 | 2017-10-11 | Cree, Inc. | High power insulated gate bipolar transistors |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
US9478537B2 (en) | 2009-07-15 | 2016-10-25 | Cree, Inc. | High-gain wide bandgap darlington transistors and related methods of fabrication |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
JP2014531752A (ja) | 2011-09-11 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | 改善したレイアウトを有するトランジスタを備える高電流密度電力モジュール |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
-
1984
- 1984-05-14 JP JP9794084A patent/JPS60240158A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60240158A (ja) | 1985-11-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |