JPS60240158A - 半導体回路 - Google Patents

半導体回路

Info

Publication number
JPS60240158A
JPS60240158A JP59097940A JP9794084A JPS60240158A JP S60240158 A JPS60240158 A JP S60240158A JP 59097940 A JP59097940 A JP 59097940A JP 9794084 A JP9794084 A JP 9794084A JP S60240158 A JPS60240158 A JP S60240158A
Authority
JP
Japan
Prior art keywords
control transistor
emitter
generator
voltage
semiconductor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59097940A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0378787B2 (enrdf_load_stackoverflow
Inventor
Tatsu Araki
荒木　達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59097940A priority Critical patent/JPS60240158A/ja
Publication of JPS60240158A publication Critical patent/JPS60240158A/ja
Publication of JPH0378787B2 publication Critical patent/JPH0378787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59097940A 1984-05-14 1984-05-14 半導体回路 Granted JPS60240158A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59097940A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59097940A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Publications (2)

Publication Number Publication Date
JPS60240158A true JPS60240158A (ja) 1985-11-29
JPH0378787B2 JPH0378787B2 (enrdf_load_stackoverflow) 1991-12-16

Family

ID=14205659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097940A Granted JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Country Status (1)

Country Link
JP (1) JPS60240158A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011008919A1 (en) * 2009-07-15 2011-01-20 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9231122B2 (en) 2011-09-11 2016-01-05 Cree, Inc. Schottky diode
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9548374B2 (en) 2006-08-17 2017-01-17 Cree, Inc. High power insulated gate bipolar transistors
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9673283B2 (en) 2011-05-06 2017-06-06 Cree, Inc. Power module for supporting high current densities

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9548374B2 (en) 2006-08-17 2017-01-17 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9064840B2 (en) 2007-02-27 2015-06-23 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9478537B2 (en) 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
WO2011008919A1 (en) * 2009-07-15 2011-01-20 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9595618B2 (en) 2010-03-08 2017-03-14 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9673283B2 (en) 2011-05-06 2017-06-06 Cree, Inc. Power module for supporting high current densities
US9231122B2 (en) 2011-09-11 2016-01-05 Cree, Inc. Schottky diode
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9865750B2 (en) 2011-09-11 2018-01-09 Cree, Inc. Schottky diode
US10141302B2 (en) 2011-09-11 2018-11-27 Cree, Inc. High current, low switching loss SiC power module
US10153364B2 (en) 2011-09-11 2018-12-11 Cree, Inc. Power module having a switch module for supporting high current densities
US11024731B2 (en) 2011-09-11 2021-06-01 Cree, Inc. Power module for supporting high current densities
US11171229B2 (en) 2011-09-11 2021-11-09 Cree, Inc. Low switching loss high performance power module

Also Published As

Publication number Publication date
JPH0378787B2 (enrdf_load_stackoverflow) 1991-12-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term