JPS60240156A - 耐放射線半導体集積回路装置 - Google Patents
耐放射線半導体集積回路装置Info
- Publication number
- JPS60240156A JPS60240156A JP59094684A JP9468484A JPS60240156A JP S60240156 A JPS60240156 A JP S60240156A JP 59094684 A JP59094684 A JP 59094684A JP 9468484 A JP9468484 A JP 9468484A JP S60240156 A JPS60240156 A JP S60240156A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- integrated circuit
- semiconductor integrated
- circuit device
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59094684A JPS60240156A (ja) | 1984-05-14 | 1984-05-14 | 耐放射線半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59094684A JPS60240156A (ja) | 1984-05-14 | 1984-05-14 | 耐放射線半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60240156A true JPS60240156A (ja) | 1985-11-29 |
JPH0467341B2 JPH0467341B2 (enrdf_load_stackoverflow) | 1992-10-28 |
Family
ID=14117030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59094684A Granted JPS60240156A (ja) | 1984-05-14 | 1984-05-14 | 耐放射線半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60240156A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5145129B2 (ja) | 2008-06-24 | 2013-02-13 | 株式会社ニフコ | クリップ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160177A (en) * | 1974-09-03 | 1976-05-25 | Western Electric Co | Handotaisochi oyobi sonoseizohoho |
JPS5678154A (en) * | 1979-11-29 | 1981-06-26 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
-
1984
- 1984-05-14 JP JP59094684A patent/JPS60240156A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160177A (en) * | 1974-09-03 | 1976-05-25 | Western Electric Co | Handotaisochi oyobi sonoseizohoho |
JPS5678154A (en) * | 1979-11-29 | 1981-06-26 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0467341B2 (enrdf_load_stackoverflow) | 1992-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5101244A (en) | Semiconductor schottky device with pn regions | |
JPH0680688B2 (ja) | プレーナ型半導体デバイス体とその製法 | |
KR20020052953A (ko) | 반도체 집적 회로 장치 및 그 제조 방법 | |
JPH0793383B2 (ja) | 半導体装置 | |
US5536665A (en) | Method of manufacturing a semiconductor device with double structured well | |
JPH0621342A (ja) | 電力集積回路 | |
US4559696A (en) | Ion implantation to increase emitter energy gap in bipolar transistors | |
JPH0313748B2 (enrdf_load_stackoverflow) | ||
JPS5921170B2 (ja) | Mos型半導体装置 | |
JP2734875B2 (ja) | ヘテロ接合バイポーラトランジスタおよびその製造方法 | |
JPS60240156A (ja) | 耐放射線半導体集積回路装置 | |
US4682198A (en) | Gate turn-off thyristor with integral capacitive anode | |
JPH0313757B2 (enrdf_load_stackoverflow) | ||
JPS63192274A (ja) | 耐アルファ粒子スタティックランダムアクセスメモリ用改良型ショットキーバリアダイオード | |
JP3216315B2 (ja) | 絶縁ゲート型バイポーラトランジスタ | |
JP3128885B2 (ja) | 半導体装置 | |
JPS6245707B2 (enrdf_load_stackoverflow) | ||
JPH0499328A (ja) | バイポーラトランジスタ | |
JP2928417B2 (ja) | 半導体装置の製造方法 | |
JP2969778B2 (ja) | 高電子移動度複合トランジスタ | |
JPS58171853A (ja) | 耐放射線半導体集積回路装置 | |
CN115274839A (zh) | 深槽隔离双极晶体管及其制造方法 | |
JP3334918B2 (ja) | 半導体ダイオード | |
JPS636875A (ja) | 半導体装置 | |
JPS59132164A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |