JPS60236209A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JPS60236209A JPS60236209A JP60092161A JP9216185A JPS60236209A JP S60236209 A JPS60236209 A JP S60236209A JP 60092161 A JP60092161 A JP 60092161A JP 9216185 A JP9216185 A JP 9216185A JP S60236209 A JPS60236209 A JP S60236209A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- parallel
- crystallographic
- plane
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title description 16
- 241000257465 Echinoidea Species 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000010276 construction Methods 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60384884A | 1984-04-30 | 1984-04-30 | |
| US603848 | 1984-04-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60236209A true JPS60236209A (ja) | 1985-11-25 |
Family
ID=24417179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60092161A Pending JPS60236209A (ja) | 1984-04-30 | 1985-04-26 | 半導体装置およびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS60236209A (enrdf_load_stackoverflow) |
| DE (1) | DE3514691A1 (enrdf_load_stackoverflow) |
| IN (1) | IN162554B (enrdf_load_stackoverflow) |
| IT (1) | IT1184438B (enrdf_load_stackoverflow) |
| SE (1) | SE8501967L (enrdf_load_stackoverflow) |
| YU (1) | YU45712B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005633A (ja) * | 2003-06-16 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58162027A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electronics Corp | 半導体ウエハ |
| JPS59167011A (ja) * | 1983-02-01 | 1984-09-20 | Mitsubishi Electric Corp | 半導体ウエハ |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3965453A (en) * | 1974-12-27 | 1976-06-22 | Bell Telephone Laboratories, Incorporated | Piezoresistor effects in semiconductor resistors |
| JPS58139420A (ja) * | 1982-02-15 | 1983-08-18 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体集積回路基板 |
-
1984
- 1984-07-04 IN IN476/CAL/84A patent/IN162554B/en unknown
-
1985
- 1985-04-12 IT IT20324/85A patent/IT1184438B/it active
- 1985-04-22 YU YU67185A patent/YU45712B/sh unknown
- 1985-04-23 SE SE8501967A patent/SE8501967L/ not_active Application Discontinuation
- 1985-04-24 DE DE19853514691 patent/DE3514691A1/de not_active Withdrawn
- 1985-04-26 JP JP60092161A patent/JPS60236209A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58162027A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electronics Corp | 半導体ウエハ |
| JPS59167011A (ja) * | 1983-02-01 | 1984-09-20 | Mitsubishi Electric Corp | 半導体ウエハ |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005633A (ja) * | 2003-06-16 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US7893501B2 (en) | 2003-06-16 | 2011-02-22 | Panasonic Corporation | Semiconductor device including MISFET having internal stress film |
| US8203186B2 (en) | 2003-06-16 | 2012-06-19 | Panasonic Corporation | Semiconductor device including a stress film |
| US8383486B2 (en) | 2003-06-16 | 2013-02-26 | Panasonic Corporation | Method of manufacturing a semiconductor device including a stress film |
Also Published As
| Publication number | Publication date |
|---|---|
| YU45712B (sh) | 1992-07-20 |
| IT1184438B (it) | 1987-10-28 |
| YU67185A (en) | 1988-08-31 |
| SE8501967L (sv) | 1985-10-31 |
| IN162554B (enrdf_load_stackoverflow) | 1988-06-11 |
| DE3514691A1 (de) | 1985-10-31 |
| IT8520324A0 (it) | 1985-04-12 |
| SE8501967D0 (sv) | 1985-04-23 |
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