YU45712B - Poluprovodnička pločica od monokristalnog silicijuma dijamantno kubične strukture sa smanjenim kristalografskim defektima - Google Patents
Poluprovodnička pločica od monokristalnog silicijuma dijamantno kubične strukture sa smanjenim kristalografskim defektimaInfo
- Publication number
- YU45712B YU45712B YU67185A YU67185A YU45712B YU 45712 B YU45712 B YU 45712B YU 67185 A YU67185 A YU 67185A YU 67185 A YU67185 A YU 67185A YU 45712 B YU45712 B YU 45712B
- Authority
- YU
- Yugoslavia
- Prior art keywords
- section
- parallel
- plate made
- cubic structure
- semiconductor plate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910003460 diamond Inorganic materials 0.000 title 1
- 239000010432 diamond Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
u poluprovodničkim uredjajima, koja ima glavnu površinu 24 koja je paralelna sa jednom od kristalografskih ravni (100), pri čemu je ova pločica poravnata u odnosu na referentnu poziciju korišćenjem glavnog orijentacionog odsečka 22 na svom obimu, pa zatim podvrgnuta obradi kojom se obrazuju pravolinijski elementi 16 po njenoj površini, gde elementi 16 koji sadrže silicijum nitrid, polikristalni silicijum ili silicijum dioksid, imaju ivice 18 koje stvaraju izvorišta stresova u ovoj pločici, koje su orijentisane u smerovima koji su multipli od 90 u odnosu na odsečak 22, naznač en time, što joj je glavna površina (24) paralelna sa jednom od kristalografskih ravni (100) i što je glavni orijentacioni odsečak (22) paralelan sa jednim od kristalografskih smerova 001 koji leže na glavnoj površini (24) pločice. Poluprovodnička pločica prema zahtevu 1, naznačen time, što je glavna površina (24) u suštini kružnog oblika sa odsečkom (22).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60384884A | 1984-04-30 | 1984-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| YU67185A YU67185A (en) | 1988-08-31 |
| YU45712B true YU45712B (sh) | 1992-07-20 |
Family
ID=24417179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| YU67185A YU45712B (sh) | 1984-04-30 | 1985-04-22 | Poluprovodnička pločica od monokristalnog silicijuma dijamantno kubične strukture sa smanjenim kristalografskim defektima |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS60236209A (sh) |
| DE (1) | DE3514691A1 (sh) |
| IN (1) | IN162554B (sh) |
| IT (1) | IT1184438B (sh) |
| SE (1) | SE8501967L (sh) |
| YU (1) | YU45712B (sh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4557508B2 (ja) | 2003-06-16 | 2010-10-06 | パナソニック株式会社 | 半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3965453A (en) * | 1974-12-27 | 1976-06-22 | Bell Telephone Laboratories, Incorporated | Piezoresistor effects in semiconductor resistors |
| JPS58139420A (ja) * | 1982-02-15 | 1983-08-18 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体集積回路基板 |
| JPS58162027A (ja) * | 1982-03-19 | 1983-09-26 | Matsushita Electronics Corp | 半導体ウエハ |
| JPS59167011A (ja) * | 1983-02-01 | 1984-09-20 | Mitsubishi Electric Corp | 半導体ウエハ |
-
1984
- 1984-07-04 IN IN476/CAL/84A patent/IN162554B/en unknown
-
1985
- 1985-04-12 IT IT20324/85A patent/IT1184438B/it active
- 1985-04-22 YU YU67185A patent/YU45712B/sh unknown
- 1985-04-23 SE SE8501967A patent/SE8501967L/ not_active Application Discontinuation
- 1985-04-24 DE DE19853514691 patent/DE3514691A1/de not_active Withdrawn
- 1985-04-26 JP JP60092161A patent/JPS60236209A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE8501967D0 (sv) | 1985-04-23 |
| SE8501967L (sv) | 1985-10-31 |
| YU67185A (en) | 1988-08-31 |
| DE3514691A1 (de) | 1985-10-31 |
| JPS60236209A (ja) | 1985-11-25 |
| IT8520324A0 (it) | 1985-04-12 |
| IT1184438B (it) | 1987-10-28 |
| IN162554B (sh) | 1988-06-11 |
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