GB1477856A - Single crystal of semiconductive material on crystal of insulating material - Google Patents

Single crystal of semiconductive material on crystal of insulating material

Info

Publication number
GB1477856A
GB1477856A GB2483574A GB2483574A GB1477856A GB 1477856 A GB1477856 A GB 1477856A GB 2483574 A GB2483574 A GB 2483574A GB 2483574 A GB2483574 A GB 2483574A GB 1477856 A GB1477856 A GB 1477856A
Authority
GB
United Kingdom
Prior art keywords
crystal
interface
single crystal
crystals
insulating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2483574A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to GB2483574A priority Critical patent/GB1477856A/en
Publication of GB1477856A publication Critical patent/GB1477856A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents

Abstract

1477856 Single crystals on a substrate SEMICONDUCTOR RESEARCH FOUNDATION 5 June 1974 24835/74 Heading B1S Lattice strains developed when a single crystal of semiconducting material is grown on a crystal of electrically insulating material are decreased (a) by a change in the composition of at least that portion of at least one of the two crystals adjacent to the interface thereof (b) by addition of an element to at least that portion of at least one of the crystals adjacent to the interface, or (c) by an admixture with at least that portion of at least one of the crystals adjacent the interface thereof of another crystal. Exemplified is the growth of single crystal silicon on spinels. Other suitable insulating materials as quartz, saphire, zircon, carborundum and benzllia.
GB2483574A 1974-06-05 1974-06-05 Single crystal of semiconductive material on crystal of insulating material Expired GB1477856A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2483574A GB1477856A (en) 1974-06-05 1974-06-05 Single crystal of semiconductive material on crystal of insulating material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2483574A GB1477856A (en) 1974-06-05 1974-06-05 Single crystal of semiconductive material on crystal of insulating material

Publications (1)

Publication Number Publication Date
GB1477856A true GB1477856A (en) 1977-06-29

Family

ID=10217986

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2483574A Expired GB1477856A (en) 1974-06-05 1974-06-05 Single crystal of semiconductive material on crystal of insulating material

Country Status (1)

Country Link
GB (1) GB1477856A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1018758A1 (en) * 1998-06-30 2000-07-12 Sony Corporation Method for forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1018758A1 (en) * 1998-06-30 2000-07-12 Sony Corporation Method for forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device
EP1018758A4 (en) * 1998-06-30 2002-01-02 Sony Corp Method for forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19940604