JPS60235790A - 半絶縁性ＧａＡｓ単結晶の成長方法 - Google Patents
半絶縁性ＧａＡｓ単結晶の成長方法Info
- Publication number
- JPS60235790A JPS60235790A JP8967684A JP8967684A JPS60235790A JP S60235790 A JPS60235790 A JP S60235790A JP 8967684 A JP8967684 A JP 8967684A JP 8967684 A JP8967684 A JP 8967684A JP S60235790 A JPS60235790 A JP S60235790A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- single crystal
- crystal
- concentration
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 37
- 239000000203 mixture Substances 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000155 melt Substances 0.000 claims abstract description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000000843 powder Substances 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000000370 acceptor Substances 0.000 description 8
- 239000003574 free electron Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910005224 Ga2O Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- -1 pyron nitride Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8967684A JPS60235790A (ja) | 1984-05-04 | 1984-05-04 | 半絶縁性ＧａＡｓ単結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8967684A JPS60235790A (ja) | 1984-05-04 | 1984-05-04 | 半絶縁性ＧａＡｓ単結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60235790A true JPS60235790A (ja) | 1985-11-22 |
| JPH0569798B2 JPH0569798B2 (enrdf_load_stackoverflow) | 1993-10-01 |
Family
ID=13977352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8967684A Granted JPS60235790A (ja) | 1984-05-04 | 1984-05-04 | 半絶縁性ＧａＡｓ単結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60235790A (enrdf_load_stackoverflow) |
-
1984
- 1984-05-04 JP JP8967684A patent/JPS60235790A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0569798B2 (enrdf_load_stackoverflow) | 1993-10-01 |
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