JPS60231378A - 発光素子の製造方法 - Google Patents

発光素子の製造方法

Info

Publication number
JPS60231378A
JPS60231378A JP59087181A JP8718184A JPS60231378A JP S60231378 A JPS60231378 A JP S60231378A JP 59087181 A JP59087181 A JP 59087181A JP 8718184 A JP8718184 A JP 8718184A JP S60231378 A JPS60231378 A JP S60231378A
Authority
JP
Japan
Prior art keywords
layer
cladding layer
gaas
algaas
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59087181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260075B2 (enrdf_load_stackoverflow
Inventor
Hideaki Horikawa
英明 堀川
Akihiro Matoba
的場　昭大
Kazuya Sano
一也 佐野
Tomoyuki Yamada
山田　朋幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59087181A priority Critical patent/JPS60231378A/ja
Publication of JPS60231378A publication Critical patent/JPS60231378A/ja
Publication of JPH0260075B2 publication Critical patent/JPH0260075B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP59087181A 1984-04-28 1984-04-28 発光素子の製造方法 Granted JPS60231378A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59087181A JPS60231378A (ja) 1984-04-28 1984-04-28 発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59087181A JPS60231378A (ja) 1984-04-28 1984-04-28 発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS60231378A true JPS60231378A (ja) 1985-11-16
JPH0260075B2 JPH0260075B2 (enrdf_load_stackoverflow) 1990-12-14

Family

ID=13907813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59087181A Granted JPS60231378A (ja) 1984-04-28 1984-04-28 発光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS60231378A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252486A (ja) * 1988-08-17 1990-02-22 Res Dev Corp Of Japan 面発光型半導体レーザの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830186A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 光半導体素子及びその製造方法
JPS5861695A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 半導体レ−ザ素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830186A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 光半導体素子及びその製造方法
JPS5861695A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 半導体レ−ザ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0252486A (ja) * 1988-08-17 1990-02-22 Res Dev Corp Of Japan 面発光型半導体レーザの製造方法

Also Published As

Publication number Publication date
JPH0260075B2 (enrdf_load_stackoverflow) 1990-12-14

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