JPS6353715B2 - - Google Patents

Info

Publication number
JPS6353715B2
JPS6353715B2 JP55087042A JP8704280A JPS6353715B2 JP S6353715 B2 JPS6353715 B2 JP S6353715B2 JP 55087042 A JP55087042 A JP 55087042A JP 8704280 A JP8704280 A JP 8704280A JP S6353715 B2 JPS6353715 B2 JP S6353715B2
Authority
JP
Japan
Prior art keywords
mesa
active layer
semiconductor laser
manufacturing
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55087042A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712583A (en
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8704280A priority Critical patent/JPS5712583A/ja
Priority to US06/277,508 priority patent/US4429397A/en
Publication of JPS5712583A publication Critical patent/JPS5712583A/ja
Publication of JPS6353715B2 publication Critical patent/JPS6353715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP8704280A 1980-06-26 1980-06-26 Manufacture of semiconductor laser Granted JPS5712583A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8704280A JPS5712583A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser
US06/277,508 US4429397A (en) 1980-06-26 1981-06-26 Buried heterostructure laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8704280A JPS5712583A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5712583A JPS5712583A (en) 1982-01-22
JPS6353715B2 true JPS6353715B2 (enrdf_load_stackoverflow) 1988-10-25

Family

ID=13903878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8704280A Granted JPS5712583A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5712583A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716693B2 (ja) * 1985-02-08 1998-02-18 ソニー株式会社 半導体レーザー

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF QUANTUM ELECTRONICS=1980 *

Also Published As

Publication number Publication date
JPS5712583A (en) 1982-01-22

Similar Documents

Publication Publication Date Title
JPH0673390B2 (ja) 埋め込みヘテロ構造半導体デバイスの製作方法
US4870468A (en) Semiconductor light-emitting device and method of manufacturing the same
KR940006782B1 (ko) 반도체 레이저
JPS6318877B2 (enrdf_load_stackoverflow)
JPS6353715B2 (enrdf_load_stackoverflow)
JPH0552676B2 (enrdf_load_stackoverflow)
JP2804197B2 (ja) 半導体レーザの製造方法
US5360763A (en) Method for fabricating an optical semiconductor device
JP3038424B2 (ja) 埋め込み構造半導体レーザとその製造方法
JP3689733B2 (ja) 半導体素子の製造方法
JPH05226774A (ja) 半導体レーザ素子とその製造方法
JPH0437598B2 (enrdf_load_stackoverflow)
KR950008859B1 (ko) 반도체 발광소자 및 그 제조방법
JPH037153B2 (enrdf_load_stackoverflow)
JPS6344311B2 (enrdf_load_stackoverflow)
JPS6361793B2 (enrdf_load_stackoverflow)
JP3080643B2 (ja) 半導体レーザ装置およびその製造方法
JPS5834988A (ja) 半導体レ−ザの製造方法
JPH0637394A (ja) 半導体レーザ装置およびその製造方法
JP2525776B2 (ja) 半導体装置の製造方法
JP2547459B2 (ja) 半導体レーザ素子及びその製造方法
JPS6241437B2 (enrdf_load_stackoverflow)
JPH0116035B2 (enrdf_load_stackoverflow)
JPH0744312B2 (ja) 埋め込み型半導体レーザの製造方法
JPS60145691A (ja) 半導体レ−ザ