JPS6353715B2 - - Google Patents
Info
- Publication number
- JPS6353715B2 JPS6353715B2 JP55087042A JP8704280A JPS6353715B2 JP S6353715 B2 JPS6353715 B2 JP S6353715B2 JP 55087042 A JP55087042 A JP 55087042A JP 8704280 A JP8704280 A JP 8704280A JP S6353715 B2 JPS6353715 B2 JP S6353715B2
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- active layer
- semiconductor laser
- manufacturing
- stripe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Weting (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8704280A JPS5712583A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor laser |
US06/277,508 US4429397A (en) | 1980-06-26 | 1981-06-26 | Buried heterostructure laser diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8704280A JPS5712583A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5712583A JPS5712583A (en) | 1982-01-22 |
JPS6353715B2 true JPS6353715B2 (enrdf_load_stackoverflow) | 1988-10-25 |
Family
ID=13903878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8704280A Granted JPS5712583A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5712583A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2716693B2 (ja) * | 1985-02-08 | 1998-02-18 | ソニー株式会社 | 半導体レーザー |
-
1980
- 1980-06-26 JP JP8704280A patent/JPS5712583A/ja active Granted
Non-Patent Citations (1)
Title |
---|
IEEE JOURNAL OF QUANTUM ELECTRONICS=1980 * |
Also Published As
Publication number | Publication date |
---|---|
JPS5712583A (en) | 1982-01-22 |