JPS6241437B2 - - Google Patents
Info
- Publication number
- JPS6241437B2 JPS6241437B2 JP7234480A JP7234480A JPS6241437B2 JP S6241437 B2 JPS6241437 B2 JP S6241437B2 JP 7234480 A JP7234480 A JP 7234480A JP 7234480 A JP7234480 A JP 7234480A JP S6241437 B2 JPS6241437 B2 JP S6241437B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cladding layer
- active layer
- conductivity type
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000005253 cladding Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234480A JPS56169385A (en) | 1980-05-30 | 1980-05-30 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234480A JPS56169385A (en) | 1980-05-30 | 1980-05-30 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56169385A JPS56169385A (en) | 1981-12-26 |
| JPS6241437B2 true JPS6241437B2 (enrdf_load_stackoverflow) | 1987-09-02 |
Family
ID=13486585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7234480A Granted JPS56169385A (en) | 1980-05-30 | 1980-05-30 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56169385A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100729117B1 (ko) | 2006-08-28 | 2007-06-14 | 동부일렉트로닉스 주식회사 | 디엘피 소자의 금속 배선 형성 방법 |
-
1980
- 1980-05-30 JP JP7234480A patent/JPS56169385A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56169385A (en) | 1981-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH09186402A (ja) | 半導体構造 | |
| US4870468A (en) | Semiconductor light-emitting device and method of manufacturing the same | |
| JPS61190993A (ja) | 半導体レ−ザ素子の製造方法 | |
| JPH0474877B2 (enrdf_load_stackoverflow) | ||
| JPH0777278B2 (ja) | 半導体レーザおよびその製造方法 | |
| JPS6241437B2 (enrdf_load_stackoverflow) | ||
| JPS6318874B2 (enrdf_load_stackoverflow) | ||
| JPS63124484A (ja) | 半導体レ−ザ素子 | |
| JPS5925399B2 (ja) | 半導体レ−ザの製造方法 | |
| JPS61242091A (ja) | 半導体発光素子 | |
| JPS6342871B2 (enrdf_load_stackoverflow) | ||
| JPH05226774A (ja) | 半導体レーザ素子とその製造方法 | |
| JPS58131787A (ja) | 半導体レ−ザ | |
| JPS6237835B2 (enrdf_load_stackoverflow) | ||
| JPS6241436B2 (enrdf_load_stackoverflow) | ||
| JPH0116035B2 (enrdf_load_stackoverflow) | ||
| JPH0680868B2 (ja) | 半導体レーザ素子 | |
| JPH0380589A (ja) | 半導体レーザ素子の製造方法 | |
| JPS6354234B2 (enrdf_load_stackoverflow) | ||
| JPS5914912B2 (ja) | 半導体レ−ザの製造方法 | |
| JPH04206985A (ja) | 光半導体素子の製造方法 | |
| JPH02199891A (ja) | 半導体レーザの製造方法 | |
| JPS6353715B2 (enrdf_load_stackoverflow) | ||
| JPS6115599B2 (enrdf_load_stackoverflow) | ||
| JPH0260077B2 (enrdf_load_stackoverflow) |