JPS6361793B2 - - Google Patents
Info
- Publication number
- JPS6361793B2 JPS6361793B2 JP54138795A JP13879579A JPS6361793B2 JP S6361793 B2 JPS6361793 B2 JP S6361793B2 JP 54138795 A JP54138795 A JP 54138795A JP 13879579 A JP13879579 A JP 13879579A JP S6361793 B2 JPS6361793 B2 JP S6361793B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- semiconductor
- width
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Weting (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13879579A JPS5662386A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13879579A JPS5662386A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5662386A JPS5662386A (en) | 1981-05-28 |
| JPS6361793B2 true JPS6361793B2 (enrdf_load_stackoverflow) | 1988-11-30 |
Family
ID=15230392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13879579A Granted JPS5662386A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5662386A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59141282A (ja) * | 1983-02-02 | 1984-08-13 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| US4566171A (en) * | 1983-06-20 | 1986-01-28 | At&T Bell Laboratories | Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices |
| JPS61171136A (ja) * | 1985-01-25 | 1986-08-01 | Toshiba Corp | 半導体結晶のメサエツチング方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55162288A (en) * | 1979-06-04 | 1980-12-17 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of buried type photosemiconductor device |
-
1979
- 1979-10-29 JP JP13879579A patent/JPS5662386A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5662386A (en) | 1981-05-28 |
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