JPS6022827B2 - ボンデイングワイヤ - Google Patents

ボンデイングワイヤ

Info

Publication number
JPS6022827B2
JPS6022827B2 JP52099598A JP9959877A JPS6022827B2 JP S6022827 B2 JPS6022827 B2 JP S6022827B2 JP 52099598 A JP52099598 A JP 52099598A JP 9959877 A JP9959877 A JP 9959877A JP S6022827 B2 JPS6022827 B2 JP S6022827B2
Authority
JP
Japan
Prior art keywords
wire
metal
bonding
bonding wire
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52099598A
Other languages
English (en)
Other versions
JPS5433660A (en
Inventor
武久 浜野
元 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52099598A priority Critical patent/JPS6022827B2/ja
Publication of JPS5433660A publication Critical patent/JPS5433660A/ja
Publication of JPS6022827B2 publication Critical patent/JPS6022827B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6605High-frequency electrical connections
    • H01L2223/6611Wire connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45014Ribbon connectors, e.g. rectangular cross-section
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45025Plural core members
    • H01L2224/4503Stacked arrangements
    • H01L2224/45032Two-layer arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
    • H01L2224/48096Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、ボンディングワイヤの構造及びそれを用いた
ワイヤボンディング方法に関する。
従来提案されているワイヤボンディング法は、Au,A
そ線等を用い超音波溶接熱圧着(ネイルヘッド)、抵抗
溶接等のボンディング法により、半導体べレツトのパッ
ドとりードの先端部とを電気的に接続させる方法で、半
導体装置の製造分野では広く実用化されている技術であ
る。しかし、ワイヤボンディングは操作が比較的簡単で
ある反面、接続部(コンタクト部)の機械的強度はそれ
程強くない。
特に、パッドとワイヤ、ワイヤとりードとの材料がそれ
ぞれ異なる場合(異なるのが一般的である)には、コン
タクト部に金属間化合物が生成され、接合部が脆弱化す
る。この金属間化合物の生成を防止して接合部の接着力
(ボンダピリティ)確保するために、従来から例えばワ
イヤ先端部あるいはリード先端部にAu又はAgメッキ
を施す等の表面処理を行うのが普通であった。このAu
あるいはAgメッキ等の表面処理は高価な作業となり、
半導体装置の構成部品の価格低減の阻害要因となってい
る。そこで、本発明の目的は、接着強度の強いボンディ
ングワイヤを提供するにある。
本発明は、接合部の脆弱化の原因が異種金属接合による
金属間化合物の生成にある点を考慮し、極力同種金属の
接合、又は金属間化合物生成をしない金属同士の接合を
形成する、あるいは金属間化合物を生成する金属同士の
接合部を少なくする等の手段により、接合強度を強くし
たボンディングワイヤを提供しようとするもので、その
要旨とするところは、角形断面の第1の金属から成る第
1の線材と、この線材の鞄線に沿って設けられた角形断
面の第2の金属からなる第2の線材とにより全体として
角形断面で異種金属の組み合せから成るボンディングワ
イヤを構成した点にある。
本発明に於て、第1の金属と、第2の金属の選択は、ベ
レツトのパッド材質及びリードの先端部の材質によって
決められる。即ち、第1の金属としてパッドと金属間化
合物を生成しない材料を選択すれば、第2の金属として
はリードの先端部と金属間化合物を生成しない材料が選
択される。第1の金属線材と第2の金属線材との接合形
態は、クラッド線とするのが好ましく、具体的には、第
1の金属線材の片面に第2の金度孫像材を被着したり、
第1の金属線材のまわりを第2の金属線材で被ったりす
るのがよい。又、第1の金属線材を第2の金属線村でサ
ンドウィッチ形にはさむこともできる。
更には、第1の金属線材断面が台形、第2の金属線材断
面が三角形で全体のボンディングワイヤの断面が三角形
とすることもできる。通常、半導体べレツトのパッドは
Aそで、リードの先端はコバールでそれぞれ作られるの
で、本発明の好ましい実施例に於けるワイヤで使用され
る材質は、第1の金属、即ちパッド側接合用としては、
A夕,Au,Ag,Cu等であり、第2の金属、即ちリ
ード側接合用としては、Feステンレススチール42ア
ロイ、コバール、Sn,Cu,Au,Aそ,Aタ等であ
る。
これ等の金属のうち異なるもの同士を任意に組み合せる
ことにより、本発明のボンディングワイヤが形成される
本発明のボンディングワイヤは、上述した利点の他、断
面を角形とすることによって、製法が比較的容易であり
、しかもパッドとワイヤ、ワイヤとりードとの接合のし
易さ、即ち、丸形断面に比べ接合位置合せなじみ易さが
優れている。
以下、本発明の一実施例を図に基づき説明する。
第1図及び第2図は3本で1組のりードを有するリード
フレームの中央リード1に半導体べレツト2を固着し、
このべレツトに形成されたAそパッド3と中央リードの
両側のりード(材質コバール)4とを本発明に係わるボ
ンディングワイヤ5にて熱圧着接続した状態を示してい
る。
第1図が上面で、第2図が第1図0ーロ線断面図である
。第3図は、ボンディングワイヤ5の断面図で第1の線
材6を構成する第1の金属はAそ、第2の線材7を構成
する第2の金属はコバールである。この様な構造のワイ
ヤをべレツトのパッド及びリード先端部に接続した個所
の拡大図を第4図に示している。パッド側の熱圧着され
るワイヤの金属孫像材はA〆線材6で、リード先端部に
熱圧着される金属線材はコバール線材7である。ここで
、接合に際しては、ボンディングワイヤは1800回転
させられる。あるいは第5図に示す様に一方の接合部で
L字形に曲げられて接合される。本発明に係わるボンデ
ィングワイヤ5を使用し、実施例で示された様にパッド
及びリードにワイヤをボンディングすれば、同種金属同
士の熱圧着であるため金属間化合物は生成されず、それ
に起因する接合部の脆弱化は阻止される。
更に、従来の様なりード先端部のメッキ等のわずらわし
い表面処理作業も不要となる。
【図面の簡単な説明】
第1図乃至第5図は、本発明の実施態様を説明する図で
、第1図及び第2図はべレットのパッドとりードとをワ
イヤで接合した状態を示し、第1図はその上面図、第2
図は第1図のローロ線断面図、第3図は、本発明に係わ
るワイヤの断面図、第4図は、接合部拡大断面図、第5
図は、本発明の他の実施態様の説明図で接合部拡大断面
図である。 1,4・・・・・・リードフレーム、2・・・・・・半
導体べレツト、3……パッド、5……ボンディングワイ
ヤ、6・・・・・・Aク線材、7・・・・・・コバール
線材。 第1図第2図 第3図 第4図 第5図

Claims (1)

    【特許請求の範囲】
  1. 1 たがいに異種の金属からそれぞれ構成されている第
    1及び第2のボンデイング予定部の間を電気的・機械的
    に接続するためのボンデイングワイヤであつて、前記第
    1のボンデイング予定部の金属であるアルミニウムとの
    間で良好なボンダビリテイを示す第1の金属であるアル
    ミニウムからなる角形断面の第1の線材と、前記第2の
    ボンデイング予定部の金属であるコバールとの間で良好
    なボンダビリテイを示す第2の金属であるコバールから
    なり、前記第1の線材にその軸方向に沿つて固着された
    断面角形の第2の線材とをそなえたボンデイングワイヤ
JP52099598A 1977-08-22 1977-08-22 ボンデイングワイヤ Expired JPS6022827B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52099598A JPS6022827B2 (ja) 1977-08-22 1977-08-22 ボンデイングワイヤ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52099598A JPS6022827B2 (ja) 1977-08-22 1977-08-22 ボンデイングワイヤ

Publications (2)

Publication Number Publication Date
JPS5433660A JPS5433660A (en) 1979-03-12
JPS6022827B2 true JPS6022827B2 (ja) 1985-06-04

Family

ID=14251524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52099598A Expired JPS6022827B2 (ja) 1977-08-22 1977-08-22 ボンデイングワイヤ

Country Status (1)

Country Link
JP (1) JPS6022827B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200138177A (ko) 2018-03-29 2020-12-09 쿠리타 고교 가부시키가이샤 선택성 투과막, 그 제조 방법 및 수처리 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6244442U (ja) * 1985-09-04 1987-03-17
JPS62134240U (ja) * 1986-02-18 1987-08-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200138177A (ko) 2018-03-29 2020-12-09 쿠리타 고교 가부시키가이샤 선택성 투과막, 그 제조 방법 및 수처리 방법

Also Published As

Publication number Publication date
JPS5433660A (en) 1979-03-12

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