JPS60220929A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS60220929A
JPS60220929A JP60062605A JP6260585A JPS60220929A JP S60220929 A JPS60220929 A JP S60220929A JP 60062605 A JP60062605 A JP 60062605A JP 6260585 A JP6260585 A JP 6260585A JP S60220929 A JPS60220929 A JP S60220929A
Authority
JP
Japan
Prior art keywords
susceptor
heater
wafer
contact point
way
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60062605A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544822B2 (https=
Inventor
Fujitsugu Nakatsui
中対　藤次
Yoshimasa Fukushima
福島　喜正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60062605A priority Critical patent/JPS60220929A/ja
Publication of JPS60220929A publication Critical patent/JPS60220929A/ja
Publication of JPH0544822B2 publication Critical patent/JPH0544822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
JP60062605A 1985-03-27 1985-03-27 プラズマｃｖｄ装置 Granted JPS60220929A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60062605A JPS60220929A (ja) 1985-03-27 1985-03-27 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062605A JPS60220929A (ja) 1985-03-27 1985-03-27 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS60220929A true JPS60220929A (ja) 1985-11-05
JPH0544822B2 JPH0544822B2 (https=) 1993-07-07

Family

ID=13205117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062605A Granted JPS60220929A (ja) 1985-03-27 1985-03-27 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS60220929A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075256A (en) * 1989-08-25 1991-12-24 Applied Materials, Inc. Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121649A (en) * 1979-03-14 1980-09-18 Pioneer Electronic Corp Cvd device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121649A (en) * 1979-03-14 1980-09-18 Pioneer Electronic Corp Cvd device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075256A (en) * 1989-08-25 1991-12-24 Applied Materials, Inc. Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer

Also Published As

Publication number Publication date
JPH0544822B2 (https=) 1993-07-07

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