JPS60219748A - ドライエツチングによるパタ−ンの形成方法 - Google Patents

ドライエツチングによるパタ−ンの形成方法

Info

Publication number
JPS60219748A
JPS60219748A JP59077023A JP7702384A JPS60219748A JP S60219748 A JPS60219748 A JP S60219748A JP 59077023 A JP59077023 A JP 59077023A JP 7702384 A JP7702384 A JP 7702384A JP S60219748 A JPS60219748 A JP S60219748A
Authority
JP
Japan
Prior art keywords
film
halocarbon
etched
mixed gas
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59077023A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0343777B2 (show.php
Inventor
Kazuhiro Tanaka
和裕 田中
Yaichiro Watakabe
渡壁　弥一郎
Yoshimare Suzuki
鈴木　淑希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59077023A priority Critical patent/JPS60219748A/ja
Publication of JPS60219748A publication Critical patent/JPS60219748A/ja
Publication of JPH0343777B2 publication Critical patent/JPH0343777B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP59077023A 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法 Granted JPS60219748A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59077023A JPS60219748A (ja) 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59077023A JPS60219748A (ja) 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS60219748A true JPS60219748A (ja) 1985-11-02
JPH0343777B2 JPH0343777B2 (show.php) 1991-07-03

Family

ID=13622153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59077023A Granted JPS60219748A (ja) 1984-04-16 1984-04-16 ドライエツチングによるパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS60219748A (show.php)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001096955A3 (en) * 2000-06-15 2002-11-28 Applied Materials Inc A method and apparatus for etching metal layers on substrates
US6534417B2 (en) 2000-05-22 2003-03-18 Applied Materials, Inc. Method and apparatus for etching photomasks
US6544894B1 (en) * 1999-01-26 2003-04-08 Sharp Kabushiki Kaisha Method of producing chromium mask
US6960413B2 (en) 2003-03-21 2005-11-01 Applied Materials, Inc. Multi-step process for etching photomasks
US7018934B2 (en) 2001-09-04 2006-03-28 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7115523B2 (en) 2000-05-22 2006-10-03 Applied Materials, Inc. Method and apparatus for etching photomasks
US7183201B2 (en) 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144541A (en) * 1980-04-11 1981-11-10 Fujitsu Ltd Etching method
JPS60148123A (ja) * 1983-12-30 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 乾式エツチング方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144541A (en) * 1980-04-11 1981-11-10 Fujitsu Ltd Etching method
JPS60148123A (ja) * 1983-12-30 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 乾式エツチング方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544894B1 (en) * 1999-01-26 2003-04-08 Sharp Kabushiki Kaisha Method of producing chromium mask
US6534417B2 (en) 2000-05-22 2003-03-18 Applied Materials, Inc. Method and apparatus for etching photomasks
US7115523B2 (en) 2000-05-22 2006-10-03 Applied Materials, Inc. Method and apparatus for etching photomasks
WO2001096955A3 (en) * 2000-06-15 2002-11-28 Applied Materials Inc A method and apparatus for etching metal layers on substrates
US7183201B2 (en) 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
US7244672B2 (en) 2001-07-23 2007-07-17 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
US7018934B2 (en) 2001-09-04 2006-03-28 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
US6960413B2 (en) 2003-03-21 2005-11-01 Applied Materials, Inc. Multi-step process for etching photomasks
US7371485B2 (en) 2003-03-21 2008-05-13 Applied Materials, Inc. Multi-step process for etching photomasks
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication

Also Published As

Publication number Publication date
JPH0343777B2 (show.php) 1991-07-03

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Legal Events

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