JPS60218884A - フオトセンサおよびその製造方法 - Google Patents

フオトセンサおよびその製造方法

Info

Publication number
JPS60218884A
JPS60218884A JP59074907A JP7490784A JPS60218884A JP S60218884 A JPS60218884 A JP S60218884A JP 59074907 A JP59074907 A JP 59074907A JP 7490784 A JP7490784 A JP 7490784A JP S60218884 A JPS60218884 A JP S60218884A
Authority
JP
Japan
Prior art keywords
sensor
layer
substrate
photosensor
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59074907A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510831B2 (enrdf_load_stackoverflow
Inventor
Yuichi Masaki
裕一 正木
Masaki Fukaya
深谷　正樹
Teruhiko Furushima
古島　輝彦
Katsunori Terada
寺田　勝則
Seiji Kakimoto
柿本　誠治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59074907A priority Critical patent/JPS60218884A/ja
Publication of JPS60218884A publication Critical patent/JPS60218884A/ja
Publication of JPH0510831B2 publication Critical patent/JPH0510831B2/ja
Priority to US08/232,432 priority patent/US5449950A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Light Receiving Elements (AREA)
JP59074907A 1984-04-16 1984-04-16 フオトセンサおよびその製造方法 Granted JPS60218884A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59074907A JPS60218884A (ja) 1984-04-16 1984-04-16 フオトセンサおよびその製造方法
US08/232,432 US5449950A (en) 1984-04-16 1994-04-21 Photosensor with organic and inorganic insulation layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59074907A JPS60218884A (ja) 1984-04-16 1984-04-16 フオトセンサおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS60218884A true JPS60218884A (ja) 1985-11-01
JPH0510831B2 JPH0510831B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=13560925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59074907A Granted JPS60218884A (ja) 1984-04-16 1984-04-16 フオトセンサおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS60218884A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218179A (ja) * 1982-06-11 1983-12-19 Sharp Corp 薄膜太陽電池

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58218179A (ja) * 1982-06-11 1983-12-19 Sharp Corp 薄膜太陽電池

Also Published As

Publication number Publication date
JPH0510831B2 (enrdf_load_stackoverflow) 1993-02-10

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