JPS60210850A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JPS60210850A
JPS60210850A JP59068416A JP6841684A JPS60210850A JP S60210850 A JPS60210850 A JP S60210850A JP 59068416 A JP59068416 A JP 59068416A JP 6841684 A JP6841684 A JP 6841684A JP S60210850 A JPS60210850 A JP S60210850A
Authority
JP
Japan
Prior art keywords
film
integrated circuit
semiconductor integrated
circuit device
protection film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59068416A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0520902B2 (enrdf_load_stackoverflow
Inventor
Yoichi Akasaka
洋一 赤坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59068416A priority Critical patent/JPS60210850A/ja
Publication of JPS60210850A publication Critical patent/JPS60210850A/ja
Publication of JPH0520902B2 publication Critical patent/JPH0520902B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP59068416A 1984-04-04 1984-04-04 半導体集積回路装置の製造方法 Granted JPS60210850A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59068416A JPS60210850A (ja) 1984-04-04 1984-04-04 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59068416A JPS60210850A (ja) 1984-04-04 1984-04-04 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60210850A true JPS60210850A (ja) 1985-10-23
JPH0520902B2 JPH0520902B2 (enrdf_load_stackoverflow) 1993-03-22

Family

ID=13373052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59068416A Granted JPS60210850A (ja) 1984-04-04 1984-04-04 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60210850A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246542A (ja) * 1985-08-26 1987-02-28 Toshiba Corp ウエ−ハテストシステム
JPS6471147A (en) * 1987-08-12 1989-03-16 American Telephone & Telegraph Solid state circuit with laser-fusible link

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5641898U (enrdf_load_stackoverflow) * 1979-09-05 1981-04-17
JPS56146268A (en) * 1980-04-15 1981-11-13 Fujitsu Ltd Manufacture of semiconductor memory unit
JPS5762544A (en) * 1980-10-03 1982-04-15 Fujitsu Ltd Semiconductor device
JPS5928374A (ja) * 1982-08-10 1984-02-15 Nec Corp 半導体集積回路装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5641898U (enrdf_load_stackoverflow) * 1979-09-05 1981-04-17
JPS56146268A (en) * 1980-04-15 1981-11-13 Fujitsu Ltd Manufacture of semiconductor memory unit
JPS5762544A (en) * 1980-10-03 1982-04-15 Fujitsu Ltd Semiconductor device
JPS5928374A (ja) * 1982-08-10 1984-02-15 Nec Corp 半導体集積回路装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246542A (ja) * 1985-08-26 1987-02-28 Toshiba Corp ウエ−ハテストシステム
JPS6471147A (en) * 1987-08-12 1989-03-16 American Telephone & Telegraph Solid state circuit with laser-fusible link

Also Published As

Publication number Publication date
JPH0520902B2 (enrdf_load_stackoverflow) 1993-03-22

Similar Documents

Publication Publication Date Title
US5936296A (en) Integrated circuits having metallic fuse links
US4628590A (en) Method of manufacture of a semiconductor device
US4581628A (en) Circuit programming by use of an electrically conductive light shield
JP2817894B2 (ja) 金属ヒューズリンクを用いた書込み可能なｍｏｓメモリ及びその製造方法
JPH10270566A (ja) レーザ溶断導線を有する固体回路とその固体回路の製造方法
JPH0428145B2 (enrdf_load_stackoverflow)
JP3509049B2 (ja) ヒューズ酸化物の厚さが調整されたヒューズ窓
US6384467B1 (en) Method for forming a cavity capable of accessing deep fuse structures and device containing the same
KR100745910B1 (ko) 반도체 소자의 퓨즈 형성방법
JP3907279B2 (ja) 半導体装置の製造方法および検査方法
US5066998A (en) Severable conductive path in an integrated-circuit device
US6197621B1 (en) Custom laser conductor linkage for integrated circuits
US5641701A (en) Method for fabricating a semiconductor device with laser programable fuses
JPS60210850A (ja) 半導体集積回路装置の製造方法
US20030003617A1 (en) Semiconductor device and method of fabricating the same
JP4621319B2 (ja) ヒューズ構造体およびその製造方法
JP4118044B2 (ja) 最適化された金属ヒューズの処理工程
JPS63307758A (ja) 集積回路装置
JPS61194740A (ja) 半導体装置
JPS5845811B2 (ja) 半導体素子チツプ面への微小導電領域の形成法
JPH02215149A (ja) 半導体装置とその製造方法
US20050205965A1 (en) Semiconductor device having a fuse including an aluminum layer
JP2766912B2 (ja) 集積回路装置の製造方法
JPH09172087A (ja) 半導体装置
US6146999A (en) Method for forming metal line of semiconductor device