JPH0520902B2 - - Google Patents
Info
- Publication number
- JPH0520902B2 JPH0520902B2 JP59068416A JP6841684A JPH0520902B2 JP H0520902 B2 JPH0520902 B2 JP H0520902B2 JP 59068416 A JP59068416 A JP 59068416A JP 6841684 A JP6841684 A JP 6841684A JP H0520902 B2 JPH0520902 B2 JP H0520902B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- fuse
- fuse medium
- medium
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59068416A JPS60210850A (ja) | 1984-04-04 | 1984-04-04 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59068416A JPS60210850A (ja) | 1984-04-04 | 1984-04-04 | 半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60210850A JPS60210850A (ja) | 1985-10-23 |
JPH0520902B2 true JPH0520902B2 (enrdf_load_stackoverflow) | 1993-03-22 |
Family
ID=13373052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59068416A Granted JPS60210850A (ja) | 1984-04-04 | 1984-04-04 | 半導体集積回路装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60210850A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246542A (ja) * | 1985-08-26 | 1987-02-28 | Toshiba Corp | ウエ−ハテストシステム |
US4853758A (en) * | 1987-08-12 | 1989-08-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Laser-blown links |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5847596Y2 (ja) * | 1979-09-05 | 1983-10-29 | 富士通株式会社 | 半導体装置 |
JPS56146268A (en) * | 1980-04-15 | 1981-11-13 | Fujitsu Ltd | Manufacture of semiconductor memory unit |
JPS5762544A (en) * | 1980-10-03 | 1982-04-15 | Fujitsu Ltd | Semiconductor device |
JPS5928374A (ja) * | 1982-08-10 | 1984-02-15 | Nec Corp | 半導体集積回路装置及びその製造方法 |
-
1984
- 1984-04-04 JP JP59068416A patent/JPS60210850A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60210850A (ja) | 1985-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5025300A (en) | Integrated circuits having improved fusible links | |
US4628590A (en) | Method of manufacture of a semiconductor device | |
US4602420A (en) | Method of manufacturing a semiconductor device | |
JPH10270566A (ja) | レーザ溶断導線を有する固体回路とその固体回路の製造方法 | |
US6384467B1 (en) | Method for forming a cavity capable of accessing deep fuse structures and device containing the same | |
US6528392B2 (en) | Dicing configuration for separating a semiconductor component from a semiconductor wafer | |
US5652169A (en) | Method for fabricating a programmable semiconductor element having an antifuse structure | |
CA1304831C (en) | Integrated circuit having laser-alterable metallization layer | |
US6121074A (en) | Fuse layout for improved fuse blow process window | |
JP3489088B2 (ja) | 冗長手段を有する半導体装置及びその製造方法 | |
JPH0520902B2 (enrdf_load_stackoverflow) | ||
JP4118044B2 (ja) | 最適化された金属ヒューズの処理工程 | |
US6096579A (en) | Method for controlling the thickness of a passivation layer on a semiconductor device | |
KR100449029B1 (ko) | 패드영역에 퓨즈박스를 구비한 반도체 장치 및 그의제조방법 | |
JP2766912B2 (ja) | 集積回路装置の製造方法 | |
JPH02215149A (ja) | 半導体装置とその製造方法 | |
JPH09172087A (ja) | 半導体装置 | |
KR100356791B1 (ko) | 반도체 소자의 퓨즈 형성 방법 | |
US20050205965A1 (en) | Semiconductor device having a fuse including an aluminum layer | |
KR100247700B1 (ko) | 반도체장치의 제조방법 | |
JPS59956A (ja) | ポリシリコンヒユ−ズを有する半導体装置 | |
JPS6144452Y2 (enrdf_load_stackoverflow) | ||
JPH0620067B2 (ja) | 半導体装置およびその製造方法 | |
JPH05166935A (ja) | 半導体装置およびその製造方法 | |
JPH07130861A (ja) | 半導体集積回路装置の製造方法 |