JPS6020440A - イオンビ−ム加工装置 - Google Patents

イオンビ−ム加工装置

Info

Publication number
JPS6020440A
JPS6020440A JP58126848A JP12684883A JPS6020440A JP S6020440 A JPS6020440 A JP S6020440A JP 58126848 A JP58126848 A JP 58126848A JP 12684883 A JP12684883 A JP 12684883A JP S6020440 A JPS6020440 A JP S6020440A
Authority
JP
Japan
Prior art keywords
grid
ion
ion beam
insulator
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58126848A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0132627B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takahisa Masuzawa
隆久 増沢
Ichiro Tsuchiya
一郎 土屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Tokyo NUC filed Critical University of Tokyo NUC
Priority to JP58126848A priority Critical patent/JPS6020440A/ja
Priority to CA000448355A priority patent/CA1217532A/en
Priority to DE8484301276T priority patent/DE3479363D1/de
Priority to EP84301276A priority patent/EP0132015B1/en
Priority to US06/584,962 priority patent/US4574179A/en
Publication of JPS6020440A publication Critical patent/JPS6020440A/ja
Publication of JPH0132627B2 publication Critical patent/JPH0132627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP58126848A 1983-07-14 1983-07-14 イオンビ−ム加工装置 Granted JPS6020440A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58126848A JPS6020440A (ja) 1983-07-14 1983-07-14 イオンビ−ム加工装置
CA000448355A CA1217532A (en) 1983-07-14 1984-02-27 Ion beam machining device
DE8484301276T DE3479363D1 (en) 1983-07-14 1984-02-27 An ion beam machining device
EP84301276A EP0132015B1 (en) 1983-07-14 1984-02-27 An ion beam machining device
US06/584,962 US4574179A (en) 1983-07-14 1984-02-29 Ion beam machining device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58126848A JPS6020440A (ja) 1983-07-14 1983-07-14 イオンビ−ム加工装置

Publications (2)

Publication Number Publication Date
JPS6020440A true JPS6020440A (ja) 1985-02-01
JPH0132627B2 JPH0132627B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-07-07

Family

ID=14945353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58126848A Granted JPS6020440A (ja) 1983-07-14 1983-07-14 イオンビ−ム加工装置

Country Status (5)

Country Link
US (1) US4574179A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0132015B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6020440A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1217532A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3479363D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216135A (ja) * 1986-03-15 1987-09-22 Shimadzu Corp イオン銃
JPS62229640A (ja) * 1986-01-21 1987-10-08 ライボルト−ヘレ−ウス・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング イオン源用抽出格子の製法及び抽出格子
JPS63124343A (ja) * 1986-11-14 1988-05-27 Nippon Telegr & Teleph Corp <Ntt> イオンソ−ス
JPS63190228A (ja) * 1987-02-02 1988-08-05 Nippon Telegr & Teleph Corp <Ntt> イオンソ−ス装置用一枚グリツド部材
JPS6418568U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1987-07-23 1989-01-30
JPH02299144A (ja) * 1989-05-15 1990-12-11 Matsushita Electric Works Ltd イオン銃グリッド
KR100585937B1 (ko) 2004-12-06 2006-06-07 학교법인 성균관대학 개선된 이온빔 소오스
JP2016117923A (ja) * 2014-12-19 2016-06-30 株式会社アルバック スパッタリング装置

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4645977A (en) * 1984-08-31 1987-02-24 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond like carbon film
JPH0630237B2 (ja) * 1984-09-10 1994-04-20 株式会社日立製作所 イオン打込み装置
WO1986006923A1 (en) * 1985-05-03 1986-11-20 The Australian National University Method and apparatus for producing large volume magnetoplasmas
CA1252581A (en) * 1985-05-28 1989-04-11 Yoshinobu Aoyagi Electron beam-excited ion beam source
GB8522976D0 (en) * 1985-09-17 1985-10-23 Atomic Energy Authority Uk Ion sources
JPH0654644B2 (ja) * 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
JPS62222633A (ja) * 1986-03-25 1987-09-30 Sharp Corp 半導体素子の製造方法
US4737688A (en) * 1986-07-22 1988-04-12 Applied Electron Corporation Wide area source of multiply ionized atomic or molecular species
US4749911A (en) * 1987-03-30 1988-06-07 Rpc Industries Ion plasma electron gun with dose rate control via amplitude modulation of the plasma discharge
FR2619247A1 (fr) * 1987-08-05 1989-02-10 Realisations Nucleaires Et Implanteur d'ions metalliques
US5089746A (en) * 1989-02-14 1992-02-18 Varian Associates, Inc. Production of ion beams by chemically enhanced sputtering of solids
DE59202116D1 (de) * 1991-04-23 1995-06-14 Balzers Hochvakuum Verfahren zur Abtragung von Material von einer Oberfläche in einer Vakuumkammer.
JP2799090B2 (ja) * 1991-09-09 1998-09-17 シャープ株式会社 イオン注入装置
JPH06224154A (ja) * 1993-01-25 1994-08-12 Mitsubishi Electric Corp プラズマ処理装置
JPH07169746A (ja) * 1993-12-14 1995-07-04 Ebara Corp 低エネルギー中性粒子線を用いた微細加工装置
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5468955A (en) * 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
DE29615190U1 (de) * 1996-03-11 1996-11-28 Balzers Verschleissschutz GmbH, 55411 Bingen Anlage zur Beschichtung von Werkstücken
US6274249B1 (en) * 1997-09-12 2001-08-14 Unaxis Balzers Aktiengesellschaft Tool with tool body and protective layer system
US6486480B1 (en) * 1998-04-10 2002-11-26 The Regents Of The University Of California Plasma formed ion beam projection lithography system
US6373070B1 (en) 1999-10-12 2002-04-16 Fei Company Method apparatus for a coaxial optical microscope with focused ion beam
FR2806527B1 (fr) * 2000-03-20 2002-10-25 Schlumberger Technologies Inc Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique
US6617538B1 (en) 2000-03-31 2003-09-09 Imad Mahawili Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements
JP3917061B2 (ja) * 2002-11-14 2007-05-23 株式会社昭和真空 圧電素子の周波数調整装置
JP4196993B2 (ja) * 2003-07-10 2008-12-17 株式会社村田製作所 電子部品の周波数調整装置及びそれを用いた電子部品の周波数調整方法
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
US8878147B2 (en) 2010-09-07 2014-11-04 Joseph C. Robinson Method and apparatus for in situ preparation of serial planar surfaces for microscopy
US8686379B1 (en) 2010-09-07 2014-04-01 Joseph C. Robinson Method and apparatus for preparing serial planar cross sections
US8435727B2 (en) 2010-10-01 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying photoresist using electromagnetic radiation and ion implantation
US9209032B2 (en) * 2013-03-15 2015-12-08 Tokyo Electron Limited Electric pressure systems for control of plasma properties and uniformity
KR102769839B1 (ko) * 2019-09-09 2025-02-20 삼성전자주식회사 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치
US11264212B1 (en) * 2020-09-29 2022-03-01 Tokyo Electron Limited Ion angle detector
CN118156108A (zh) * 2022-12-06 2024-06-07 江苏鲁汶仪器股份有限公司 一种离子束刻蚀中的离子栅网结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573977A (en) * 1968-09-19 1971-04-06 Nasa Process for glass coating an ion accelerator grid
DE1958122A1 (de) * 1969-11-19 1971-05-19 Deutsche Forsch Luft Raumfahrt Beschleuniger fuer elektrostatische Ionentriebwerke
US3744247A (en) * 1971-09-14 1973-07-10 Nasa Single grid accelerator for an ion thrustor
JPS5941510B2 (ja) * 1979-07-24 1984-10-08 双葉電子工業株式会社 酸化ベリリウム膜とその形成方法
US4447773A (en) * 1981-06-22 1984-05-08 California Institute Of Technology Ion beam accelerator system
DE3376921D1 (en) * 1982-09-10 1988-07-07 Nippon Telegraph & Telephone Ion shower apparatus
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229640A (ja) * 1986-01-21 1987-10-08 ライボルト−ヘレ−ウス・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング イオン源用抽出格子の製法及び抽出格子
JPS62216135A (ja) * 1986-03-15 1987-09-22 Shimadzu Corp イオン銃
JPS63124343A (ja) * 1986-11-14 1988-05-27 Nippon Telegr & Teleph Corp <Ntt> イオンソ−ス
JPS63190228A (ja) * 1987-02-02 1988-08-05 Nippon Telegr & Teleph Corp <Ntt> イオンソ−ス装置用一枚グリツド部材
JPS6418568U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1987-07-23 1989-01-30
JPH02299144A (ja) * 1989-05-15 1990-12-11 Matsushita Electric Works Ltd イオン銃グリッド
KR100585937B1 (ko) 2004-12-06 2006-06-07 학교법인 성균관대학 개선된 이온빔 소오스
JP2016117923A (ja) * 2014-12-19 2016-06-30 株式会社アルバック スパッタリング装置

Also Published As

Publication number Publication date
EP0132015B1 (en) 1989-08-09
US4574179A (en) 1986-03-04
DE3479363D1 (en) 1989-09-14
JPH0132627B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-07-07
CA1217532A (en) 1987-02-03
EP0132015A3 (en) 1986-12-30
EP0132015A2 (en) 1985-01-23

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