JPS60198790A - 半導体レ−ザ装置 - Google Patents
半導体レ−ザ装置Info
- Publication number
- JPS60198790A JPS60198790A JP5360584A JP5360584A JPS60198790A JP S60198790 A JPS60198790 A JP S60198790A JP 5360584 A JP5360584 A JP 5360584A JP 5360584 A JP5360584 A JP 5360584A JP S60198790 A JPS60198790 A JP S60198790A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor
- quantum well
- type electrode
- well structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 230000007704 transition Effects 0.000 claims abstract description 4
- 230000010355 oscillation Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000969 carrier Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000718541 Tetragastris balsamifera Species 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000000554 iris Anatomy 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18352—Mesa with inclined sidewall
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5360584A JPS60198790A (ja) | 1984-03-22 | 1984-03-22 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5360584A JPS60198790A (ja) | 1984-03-22 | 1984-03-22 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60198790A true JPS60198790A (ja) | 1985-10-08 |
| JPH0114716B2 JPH0114716B2 (enrdf_load_stackoverflow) | 1989-03-14 |
Family
ID=12947516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5360584A Granted JPS60198790A (ja) | 1984-03-22 | 1984-03-22 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60198790A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03505653A (ja) * | 1988-04-22 | 1991-12-05 | ユニバーシティ オブ ニュー メキシコ | 波長共振型表面発振半導体レーザー |
| US5253263A (en) * | 1992-03-12 | 1993-10-12 | Trw Inc. | High-power surface-emitting semiconductor injection laser with etched internal 45 degree and 90 degree micromirrors |
-
1984
- 1984-03-22 JP JP5360584A patent/JPS60198790A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03505653A (ja) * | 1988-04-22 | 1991-12-05 | ユニバーシティ オブ ニュー メキシコ | 波長共振型表面発振半導体レーザー |
| US5253263A (en) * | 1992-03-12 | 1993-10-12 | Trw Inc. | High-power surface-emitting semiconductor injection laser with etched internal 45 degree and 90 degree micromirrors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0114716B2 (enrdf_load_stackoverflow) | 1989-03-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |