JPS60193382A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60193382A
JPS60193382A JP59049838A JP4983884A JPS60193382A JP S60193382 A JPS60193382 A JP S60193382A JP 59049838 A JP59049838 A JP 59049838A JP 4983884 A JP4983884 A JP 4983884A JP S60193382 A JPS60193382 A JP S60193382A
Authority
JP
Japan
Prior art keywords
semiconductor layer
electron
semiconductor
layer
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59049838A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0230182B2 (enrdf_load_stackoverflow
Inventor
Toshio Baba
寿夫 馬場
Takashi Mizutani
隆 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59049838A priority Critical patent/JPS60193382A/ja
Publication of JPS60193382A publication Critical patent/JPS60193382A/ja
Publication of JPH0230182B2 publication Critical patent/JPH0230182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP59049838A 1984-03-15 1984-03-15 半導体装置 Granted JPS60193382A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59049838A JPS60193382A (ja) 1984-03-15 1984-03-15 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59049838A JPS60193382A (ja) 1984-03-15 1984-03-15 半導体装置

Publications (2)

Publication Number Publication Date
JPS60193382A true JPS60193382A (ja) 1985-10-01
JPH0230182B2 JPH0230182B2 (enrdf_load_stackoverflow) 1990-07-04

Family

ID=12842217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59049838A Granted JPS60193382A (ja) 1984-03-15 1984-03-15 半導体装置

Country Status (1)

Country Link
JP (1) JPS60193382A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903091A (en) * 1985-04-05 1990-02-20 Nec Corporation Heterojunction transistor having bipolar characteristics
US4965645A (en) * 1987-03-20 1990-10-23 International Business Machines Corp. Saturable charge FET
US5023674A (en) * 1985-08-20 1991-06-11 Fujitsu Limited Field effect transistor
US5250822A (en) * 1991-03-26 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Field effect transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05314714A (ja) * 1992-05-11 1993-11-26 Columbia Magune Prod Kk テープカセット

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903091A (en) * 1985-04-05 1990-02-20 Nec Corporation Heterojunction transistor having bipolar characteristics
US5023674A (en) * 1985-08-20 1991-06-11 Fujitsu Limited Field effect transistor
US4965645A (en) * 1987-03-20 1990-10-23 International Business Machines Corp. Saturable charge FET
US5250822A (en) * 1991-03-26 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Field effect transistor

Also Published As

Publication number Publication date
JPH0230182B2 (enrdf_load_stackoverflow) 1990-07-04

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