JPS60193382A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS60193382A JPS60193382A JP59049838A JP4983884A JPS60193382A JP S60193382 A JPS60193382 A JP S60193382A JP 59049838 A JP59049838 A JP 59049838A JP 4983884 A JP4983884 A JP 4983884A JP S60193382 A JPS60193382 A JP S60193382A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- electron
- semiconductor
- layer
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59049838A JPS60193382A (ja) | 1984-03-15 | 1984-03-15 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59049838A JPS60193382A (ja) | 1984-03-15 | 1984-03-15 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60193382A true JPS60193382A (ja) | 1985-10-01 |
JPH0230182B2 JPH0230182B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-07-04 |
Family
ID=12842217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59049838A Granted JPS60193382A (ja) | 1984-03-15 | 1984-03-15 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60193382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4903091A (en) * | 1985-04-05 | 1990-02-20 | Nec Corporation | Heterojunction transistor having bipolar characteristics |
US4965645A (en) * | 1987-03-20 | 1990-10-23 | International Business Machines Corp. | Saturable charge FET |
US5023674A (en) * | 1985-08-20 | 1991-06-11 | Fujitsu Limited | Field effect transistor |
US5250822A (en) * | 1991-03-26 | 1993-10-05 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05314714A (ja) * | 1992-05-11 | 1993-11-26 | Columbia Magune Prod Kk | テープカセット |
-
1984
- 1984-03-15 JP JP59049838A patent/JPS60193382A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4903091A (en) * | 1985-04-05 | 1990-02-20 | Nec Corporation | Heterojunction transistor having bipolar characteristics |
US5023674A (en) * | 1985-08-20 | 1991-06-11 | Fujitsu Limited | Field effect transistor |
US4965645A (en) * | 1987-03-20 | 1990-10-23 | International Business Machines Corp. | Saturable charge FET |
US5250822A (en) * | 1991-03-26 | 1993-10-05 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPH0230182B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-07-04 |
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