JPS60190560A - モリブデンのデポジシヨン方法 - Google Patents
モリブデンのデポジシヨン方法Info
- Publication number
- JPS60190560A JPS60190560A JP4783284A JP4783284A JPS60190560A JP S60190560 A JPS60190560 A JP S60190560A JP 4783284 A JP4783284 A JP 4783284A JP 4783284 A JP4783284 A JP 4783284A JP S60190560 A JPS60190560 A JP S60190560A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- argon
- mof6
- molybdenum
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4783284A JPS60190560A (ja) | 1984-03-13 | 1984-03-13 | モリブデンのデポジシヨン方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4783284A JPS60190560A (ja) | 1984-03-13 | 1984-03-13 | モリブデンのデポジシヨン方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60190560A true JPS60190560A (ja) | 1985-09-28 |
| JPH0543789B2 JPH0543789B2 (enrdf_load_stackoverflow) | 1993-07-02 |
Family
ID=12786325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4783284A Granted JPS60190560A (ja) | 1984-03-13 | 1984-03-13 | モリブデンのデポジシヨン方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60190560A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324033A (ja) * | 1986-07-16 | 1988-02-01 | Nippon Kokan Kk <Nkk> | 化学気相蒸着処理を利用した金属材の製造方法 |
-
1984
- 1984-03-13 JP JP4783284A patent/JPS60190560A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324033A (ja) * | 1986-07-16 | 1988-02-01 | Nippon Kokan Kk <Nkk> | 化学気相蒸着処理を利用した金属材の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0543789B2 (enrdf_load_stackoverflow) | 1993-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61218134A (ja) | 薄膜形成装置および薄膜形成方法 | |
| JPS582022A (ja) | 薄膜形成方法 | |
| JP3077393B2 (ja) | X線露光用マスク | |
| JPH0518906B2 (enrdf_load_stackoverflow) | ||
| JPS60190560A (ja) | モリブデンのデポジシヨン方法 | |
| JPS63317676A (ja) | 無粒構造金属化合物薄膜の製造方法 | |
| CA2288757A1 (en) | Method of forming a silicon layer on a surface | |
| JPH06110197A (ja) | 微細パターン形成用マスク形成方法及びその装置 | |
| JPS6046372A (ja) | 薄膜形成方法 | |
| JP2844779B2 (ja) | 膜形成方法 | |
| JPH02115359A (ja) | 化合物薄膜作成方法および装置 | |
| JPH06295889A (ja) | 微細パターン形成方法 | |
| JPH0745595A (ja) | 半導体装置のパターニング方法 | |
| JPH0658889B2 (ja) | 薄膜形成方法 | |
| JPH08115903A (ja) | 半導体装置の製造方法およびプラズマエッチング装置 | |
| JPS6242417A (ja) | 薄膜形成方法 | |
| JPH0559991B2 (enrdf_load_stackoverflow) | ||
| JPS5952526A (ja) | 金属酸化膜のスパツタリング方法 | |
| JPH09246259A (ja) | 薄膜形成方法及び装置 | |
| JP2625107B2 (ja) | 露光用マスクの製造方法 | |
| JPH01150139A (ja) | デバイスのマスク修正プロセスとマスク | |
| JPS59153882A (ja) | スパツタ−蒸着法 | |
| JPH03271367A (ja) | スパッタリング装置 | |
| JPS63254726A (ja) | X線露光用マスクとその製造方法 | |
| JPS59134821A (ja) | 薄膜の製造方法及び製造装置 |