JPH0559991B2 - - Google Patents
Info
- Publication number
- JPH0559991B2 JPH0559991B2 JP15438786A JP15438786A JPH0559991B2 JP H0559991 B2 JPH0559991 B2 JP H0559991B2 JP 15438786 A JP15438786 A JP 15438786A JP 15438786 A JP15438786 A JP 15438786A JP H0559991 B2 JPH0559991 B2 JP H0559991B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- deposited
- electron beam
- thin film
- auger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 238000010894 electron beam technology Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 238000004458 analytical method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 17
- 230000008021 deposition Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000000313 electron-beam-induced deposition Methods 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000005211 surface analysis Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15438786A JPS6311672A (ja) | 1986-06-30 | 1986-06-30 | 薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15438786A JPS6311672A (ja) | 1986-06-30 | 1986-06-30 | 薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6311672A JPS6311672A (ja) | 1988-01-19 |
| JPH0559991B2 true JPH0559991B2 (enrdf_load_stackoverflow) | 1993-09-01 |
Family
ID=15583021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15438786A Granted JPS6311672A (ja) | 1986-06-30 | 1986-06-30 | 薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6311672A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2784797B2 (ja) * | 1989-05-31 | 1998-08-06 | ソニー株式会社 | 配線形成方法 |
| CN110408910B (zh) | 2019-08-16 | 2020-08-28 | 中国科学院上海微系统与信息技术研究所 | 高通量气相沉积设备及气相沉积方法 |
-
1986
- 1986-06-30 JP JP15438786A patent/JPS6311672A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6311672A (ja) | 1988-01-19 |
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