JPS60190560A - Deposition method of molybdenum - Google Patents

Abstract

PURPOSE:To depositing Mo on a sample surface to form the Mo film having good sticking property with the sample by irradiating ion beams on the sample mounted in an MoF6 atmosphere in a vacuum chamber. CONSTITUTION:The sample 16 of Si wafer is mounted in the vacuum chamber 11 evacuated thoroughly to vacuum, and MoF6 is sent in from a gas introducing hole 13. On the other hand, gaseous argon is introduced to an argon beam ion source 12 to discharge argon, and argon ion beams 15 are irradiated on the surface of the sample 16 adsorbing MoF6 molecules or dissociated atoms 14. Thereby, MoF6 is dissociated, and the formed Mo is deposited on the sample 16 surface. The Mo forms the silicide mixing with the upper layer of the sample 16 surface by kinetic energy of the ion irradiation, and the Mo film superior in the sticking property with Si substrate can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for depositing molybdenum in an electronic device manufacturing process.

[Prior art and its problems]

Traditionally, molybdenum deposition methods are direct current sputtering,
Sputtering devices such as high-frequency snow ivy, Macnetron sputtering, and ion beam sputtering? The conventional method was the mainstream. These basic principles are described in Thin Film Technology written by Shigeru Hayayo and Kiyotaka Wasa, published by Kyoritsu Shuppan Co., Ltd. In these methods, a target material is sputtered by ion irradiation, and the spatter is transferred onto a sample. At this time, due to the long use of the stone, the non-uniformity of the etching of the target material increased, which caused a serious problem in the uniformity of the thickness of the Deposisilon film.

Furthermore, in order to form a silicide layer on Si, it is necessary to perform annealing with good controllability.

Furthermore, in order to use molybdenum as a pattern for electronic device manufacturing, molybdenum is first formed on the entire surface of the sample, then a stripe is formed on P and R, and then the molybdenum is etched to form a molybdenum pattern. Therefore, it had the disadvantage that the process steps were long.

[Purpose of the invention]

The object of the present invention is to provide an entire molybdenum deposition method or maskless patterning method that eliminates these conventional drawbacks.

[Structure of the invention]

The present invention is a molybdenum deposition method characterized by placing a sample f in an N 2 MoF 6 gas atmosphere and simultaneously irradiating it with an ion beam.

[Explanation of Examples]

Embodiments of the present invention will be described below with reference to the drawings.

First, an inlet for MOF6f gas and an ion source are provided in a chamber that can be evacuated, and MoFb gas molecules or dissociated atoms (1,!'ζ) are deposited on the sample and ions are irradiated at the same time.

MO is then deposited on S1 and fluorine gas is exhausted into the gas phase. And only the part where ion irradiation was performed is differential 1? This allows direct patterning of molybdenum onto the sample.

Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows a configuration diagram of a first embodiment of the present invention. This is an example of a full surface deposition on a 2 inch si wafer. A sample 16 is placed in a vacuum chamber 11 equipped with a MoF6 gas inlet 13 and an argon beam ion source 12. MoF6ff1 is introduced from the gas inlet 13 into the vacuum chamber 11 which has been sufficiently evacuated. On the other hand, argon gas is introduced into the Aldef beam ion source 12 and discharged, and the sample 16 is irradiated with the argon ion beam 15. At this time, MoF 6 molecules or dissociated atoms 14 introduced through the gas inlet 13 are chemically adsorbed on the surface of the sample 16 . In the first embodiment of the present invention, the argon ion beam is 715', the flow rate is 0.8 (m2), the acceleration energy is 300 [:eV], and the MoF
The partial pressure of the 6 gases was set to I x 10-' (Torr). Moreover, sample 16 is (100)3~6Ω・crnSi
A substrate was used.

When the argon ion beam 15 is irradiated onto the sample 16 on which MoF 6 has been chemically adsorbed, nIF of MoF 6 occurs. At this time, MO is deposited on Si, and fluorine is combined with Si to form 5tF4. F2 or M again
It desorbs into the gas phase as oFb. However, since it is irradiated with the argon ion beam 15, some of it remains in the Si or deposited Mo. However, this is because the first few tens of layers on Si are M
By applying pressure to the silicide that has the same shape as O and St, it has extremely good adhesion to other substrates.

The deposition rate in the first example is 20017m
About in was obtained.

FIG. 2 is a block diagram showing a second embodiment of the present invention. Second
The embodiment differs from the first embodiment in that it is an example of partial deposition on a separate wafer.

The sample 26 was placed in a vacuum chamber 21 equipped with an argon beam ion source 22 equipped with a Mo F 6 gas inlet 23 and a converging lens system in the same way as in FIG. Send Mo F 6 to Par 21. On the other hand, the sample 26 is irradiated with an argon ion beam 25 from the argon beam ion source 22 . Then, based on the same principle as in the first example, Mo becomes 81
In the second embodiment, the argon beam ion source 22 is focused by a lens system, and the argon ion beam 25ff is deposited on the deflection electrode 27.
Alternatively, the beam position, ie, the position where Mo can be deposited, can be varied anywhere on the Si. Therefore, patterning of molybdenum is possible directly without an etching step. As for the deposition rate, 180 i/min was obtained under the same condition as in Fig. 1.

In the above embodiments, a Kafman type and a duoplasmatron type ion source were used as ion sources, but the principles of the present invention can be practiced with any type of ion source.

Furthermore, although argon was used as the ion beam in the examples, better results were obtained with an inert gas, especially argon, when taking into account the ion rays such as He. Further, although Si was used as the sample, the principle of the present invention is practicable for any sample such as 5tO2, although the deionization rate changes. Note that the deposition rate tended to increase as the ion current density increased.

〔Effect of the invention〕

As described above, according to the present invention, M
It is possible to obtain an S film, and because the principle is fundamentally different from the conventional sputtering method for targt materials, it is possible to obtain an S film.
When formed on i, a silicide layer <,@- can be formed between the 1I-jSl interface and MO by simply depositing it. The thickness of the silicide layer can be controlled by ion energy.

Furthermore, conventional de 2j? , After sorption, the entire mask was formed in the P and R steps, and the molybdenum/4' turn was formed by etching.However, by using the principle of the present invention, the necessary molybdenum pattern can be directly printed on the sample. Can be formed. Therefore, the present invention has significant effects on molybdenum deposition or patterning in electronic device manufacturing processes.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing a first embodiment of the present invention, and FIG. 2 is a block diagram showing a second embodiment. 11.21... Vacuum chamber, 12.22... Argon beam ion source, 13.23... Gas inlet,
14.24... MoF6 molecules or dissociated atoms, 15°25... Argon ion beam, 16.26
...Sample, 27...Deflection'a0 Figure 1 Figure 2

Claims (1)

[Claims] (1) A molybdenum deposition method characterized by irradiating an ion beam onto a sample placed in a MoF6 atmosphere.