JPH0543789B2 - - Google Patents
Info
- Publication number
- JPH0543789B2 JPH0543789B2 JP4783284A JP4783284A JPH0543789B2 JP H0543789 B2 JPH0543789 B2 JP H0543789B2 JP 4783284 A JP4783284 A JP 4783284A JP 4783284 A JP4783284 A JP 4783284A JP H0543789 B2 JPH0543789 B2 JP H0543789B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- argon
- mof
- molybdenum
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000151 deposition Methods 0.000 claims description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 14
- 239000011733 molybdenum Substances 0.000 claims description 14
- 229910015275 MoF 6 Inorganic materials 0.000 claims description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 32
- 229910052786 argon Inorganic materials 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910015255 MoF6 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RLCOZMCCEKDUPY-UHFFFAOYSA-H molybdenum hexafluoride Chemical compound F[Mo](F)(F)(F)(F)F RLCOZMCCEKDUPY-UHFFFAOYSA-H 0.000 description 1
- 238000004157 plasmatron Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子デバイス製造プロセスのモリブデ
ンのデポジシヨン方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for depositing molybdenum in an electronic device manufacturing process.
従来、モリブデンのデポジシヨン方法は直流ス
パツタ、高周波スパツタ、マグネトロンスパツ
タ、イオンビームスパツタというスパツタデポジ
シヨン方法が主流となつていた。これらの基本原
理については、共立出版(株)、早川茂氏、和佐清孝
氏著の薄膜化技術に述べられている。これらの方
法はターゲツト材をイオン照射によりスパツタし
そのスパツタ物を試料にデポジシヨンするもので
ある。この際、長時間使用することによりターゲ
ツト材のエツチングの不均一性が増加し、デポジ
シヨン膜の膜厚均一性に重大な問題となつてい
た。又、Si上にデポジシヨンし、シリサイド層を
形成するには制御性よくアニールする必要があつ
た。さらに、電子デバイス製造プロセスのモリブ
デンのパターンに利用するためには一度、試料全
面にモリブデンを形成し、その後、P.Rによりマ
スクを形成し、その後モリブデンをエツチングし
てモリブデンパターンを形成するため、プロセス
工程が長くなるという欠点を有していた。
Conventionally, the main methods for depositing molybdenum have been sputter deposition methods such as DC sputtering, high frequency sputtering, magnetron sputtering, and ion beam sputtering. These basic principles are described in Thin Film Technology written by Shigeru Hayakawa and Kiyotaka Wasa, published by Kyoritsu Shuppan Co., Ltd. In these methods, a target material is sputtered by ion irradiation, and the sputtered material is deposited onto a sample. In this case, the non-uniformity of etching of the target material increases due to long-term use, which poses a serious problem in the uniformity of the thickness of the deposited film. Furthermore, in order to deposit on Si and form a silicide layer, it was necessary to perform annealing with good controllability. Furthermore, in order to use molybdenum as a pattern in the electronic device manufacturing process, molybdenum is first formed on the entire surface of the sample, then a mask is formed by PR, and then the molybdenum is etched to form a molybdenum pattern. It had the disadvantage of being long.
本発明は、このような従来の欠点を除去したモ
リブデンのデポジシヨン方法あるいはマスクレス
のパターニング方法を提供することにある。
An object of the present invention is to provide a molybdenum deposition method or a maskless patterning method that eliminates these conventional drawbacks.
本発明は、MoF6ガス雰囲気中に試料を置き、
同時に、イオンビームを照射することを特徴とす
るモリブデンのデポジシヨン方法である。
The present invention places a sample in a MoF 6 gas atmosphere,
This is a molybdenum deposition method characterized by simultaneous irradiation with an ion beam.
以下に本発明の実施例を図によつて説明する。
まず真空排気可能なチヤンバーにMoF6ガスの導
入口と、イオン源を設け、試料にMoF6ガスの分
子又は解離原子を吸着させ、同時にイオン照射す
る。すると、MoはSi上にデポジシヨンし、フツ
素ガスは、気相中に排気される。そして、イオン
照射が行なわれた部分のみデポジシヨンがおこる
ため、試料上へのモリブデンの直接パターニング
が可能となる。
Embodiments of the present invention will be described below with reference to the drawings.
First, an inlet for MoF 6 gas and an ion source are installed in a chamber that can be evacuated, and molecules or dissociated atoms of MoF 6 gas are adsorbed onto the sample, and ions are irradiated at the same time. Then, Mo is deposited on the Si, and the fluorine gas is exhausted into the gas phase. Since deposition occurs only in the ion-irradiated area, direct patterning of molybdenum onto the sample becomes possible.
以下に本発明の実施例について、図面を参照し
て詳細に説明する。第１図は本発明の第１の実施
例の構成図を示す。これは、２インチSiウエフア
ーへの全面デポジシヨンの例である。MoF6ガス
導入口１３およびアルゴンビームイオン源１２を
備えた真空チヤンバー１１中に試料１６を置く。
ガス導入口１３より十分に真空排気した真空チヤ
ンバー１１へMoF6を送入する。一方、アルゴン
ビームイオン源１２へアルゴンガスを導入して放
電させ、アルゴンイオンビーム１５を試料１６へ
照射する。この際、試料１６の表面にはガス導入
口１３より導入されたMoF6の分子又は解離した
原子１４が化学吸着している。なお、この本発明
第１の実施例ではアルゴンイオンビーム電流密度
を0.8〔ｍＡ／cm2〕、加速エネルギー300〔eV〕と
し、MoF6ガス分圧を、１×10-4〔Torr〕とした。
又、試料１６は（100）３〜6Ω・cmSi基板を用い
た。MoF6が化学吸着された試料１６上へアルゴ
ンイオンビーム１５が照射されると、MoF6の解
離がおこる。このときMoはSi上にデポジシヨン
し、フツ素はSiと結合してSiF4、F2もしくは、再
びMoF6として気相中に脱離してゆく。しかし、
アルゴンイオンビーム１５の照射があるので一部
Si中あるいはデポジシヨンしたMo中に残留する。
しかし、これはデポジシヨン後、アニールによつ
て除去できることはいうまでもない。さらに、こ
のイオン照射の効果は電子線等の照射と異なり、
試料への運動エネルギーの伝達があるため、Si上
の最初の数十層はMoとSiのまざりあつたシリサ
イドになつており、Si基板との密着性がきわめて
すぐれている。第１の実施例でのデポジシヨンレ
イトは、200Å／min程度が得られた。 Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows a block diagram of a first embodiment of the present invention. This is an example of a full surface deposition on a 2 inch Si wafer. A sample 16 is placed in a vacuum chamber 11 equipped with a MoF 6 gas inlet 13 and an argon beam ion source 12 .
MoF 6 is introduced from the gas inlet 13 into the vacuum chamber 11 which has been sufficiently evacuated. On the other hand, argon gas is introduced into the argon beam ion source 12 and discharged, and the sample 16 is irradiated with the argon ion beam 15. At this time, MoF 6 molecules or dissociated atoms 14 introduced from the gas inlet 13 are chemically adsorbed on the surface of the sample 16 . In the first embodiment of the present invention, the argon ion beam current density was 0.8 [mA/cm 2 ], the acceleration energy was 300 [eV], and the MoF 6 gas partial pressure was 1×10 -4 [Torr]. .
Further, for sample 16, a (100) 3-6 Ω·cmSi substrate was used. When the argon ion beam 15 is irradiated onto the sample 16 on which MoF 6 has been chemically adsorbed, dissociation of MoF 6 occurs. At this time, Mo is deposited on Si, and fluorine is bonded to Si and desorbed into the gas phase as SiF 4 , F 2 , or MoF 6 again. but,
Some parts are irradiated with argon ion beam 15.
It remains in Si or deposited Mo.
However, it goes without saying that this can be removed by annealing after deposition. Furthermore, the effect of this ion irradiation is different from that of electron beam irradiation,
Because of the transfer of kinetic energy to the sample, the first few tens of layers on the Si are made of silicide, a mixture of Mo and Si, and have extremely good adhesion to the Si substrate. In the first example, a deposition rate of about 200 Å/min was obtained.
第２図は本発明第２の実施例を示す構成図であ
る。第２の実施例は、第１の実施例とは異なり、
Siウエフアー上への部分的デポジシヨンの例であ
る。第１図と同様にMoF6ガス導入口２３および
収束レンズ系をそなえたアルゴンビームイオン源
２２を備えた真空チヤンバー２１中に試料２６を
置き、ガス導入口２３より十分に真空排気した真
空チヤンバー２１へMoF6を送入する。一方、ア
ルゴンビームイオン源２２よりアルゴンイオンビ
ーム２５を試料２６へ照射する。すると、第１の
実施例と同様の原理でMoがSi上にデポジシヨン
するが、第２の実施例では、アルゴンビームイオ
ン源２２は、レンズ系で収束されており、アルゴ
ンイオンビーム２５を偏向できる偏向電極２７に
より、そのビーム位置すなわち、Moをデポジシ
ヨンできる位置をSi上のいたるところに変化でき
る。従つて、モリブデンのパターニングがエツチ
ング工程なしに直接可能となる。デポジシヨンレ
イトとしては、第１図とほぼ同様の条件下で180
Å／minが得られた。 FIG. 2 is a block diagram showing a second embodiment of the present invention. The second example is different from the first example,
An example of partial deposition on a Si wafer. The sample 26 was placed in a vacuum chamber 21 equipped with an argon beam ion source 22 equipped with a MoF 6 gas inlet 23 and a convergent lens system in the same manner as in FIG. 1, and the vacuum chamber 21 was sufficiently evacuated from the gas inlet 23. Send MoF 6 to On the other hand, the sample 26 is irradiated with an argon ion beam 25 from the argon beam ion source 22 . Then, Mo is deposited on Si using the same principle as in the first embodiment, but in the second embodiment, the argon beam ion source 22 is focused by a lens system, and the argon ion beam 25 can be deflected. The deflection electrode 27 allows the beam position, that is, the position where Mo can be deposited, to be varied anywhere on the Si. Therefore, patterning of molybdenum is possible directly without an etching step. The deposition rate was 180 under almost the same conditions as in Figure 1.
Å/min was obtained.
なお、以上の、実施例ではそれぞれイオン源と
してカフマン型およびデユオプラズマトロン型を
用いたが、いかなる方式のイオン源でも本発明の
原理は、実行できる。さらに、イオンビームとし
て実施例においてもアルゴンを用いたが、He等
のイオンでも可能であることはいうまでもない。
しかし、堆積後のMo膜中の不純物、あるいはデ
ポジシヨンレイト等を考慮すると、不活性ガス特
に、アルゴンの方が良い結果が得られた。又、試
料としてはSiを用いたが、SiO2等のいかなる試
料に対してもデポジシヨンレイトは変化するが、
本発明の原理は実行可能である。なお、デポジシ
ヨンレイトはイオン電流密度を増加させれば増加
する傾向にあつた。 In the above embodiments, a Kafman type and a dual plasmatron type ion source were used, but the principles of the present invention can be practiced with any type of ion source. Furthermore, although argon was used as the ion beam in the embodiment, it goes without saying that ions such as He can also be used.
However, when considering impurities in the Mo film after deposition or the deposition rate, better results were obtained with inert gas, especially argon. Also, although Si was used as the sample, the deposition rate will change for any sample such as SiO 2 .
The principles of the invention are practicable. Note that the deposition rate tended to increase as the ion current density increased.
以上のように本発明によれば、試料との密着性
のよいMo膜を得ることが可能となり、しかも、
従来のターゲツト材のスパツタ方法と基本的に異
なる原理のため、Si上に形成した場合にはSi界面
と、Moとの間ではデポジシヨンするだけでシリ
サイド層を形成できる。そして、そのシリサイド
層の厚さはイオンエネルギーでコントロール可能
である。さらに、従来デポジシヨン後、P.R.工程
でマスクを形成し、エツチングしてモリブデンパ
ターンを形成していたのが、本発明の原理を用い
ることにより、直接必要なモリブデンパターンを
試料上に形成できる。従つて、本発明は電子デバ
イス製造プロセスにおけるモリブデンのデポジシ
ヨンあるいはパターニングに重大なる効果をもた
らす。
As described above, according to the present invention, it is possible to obtain a Mo film with good adhesion to the sample, and
Because the principle is fundamentally different from the conventional sputtering method for target materials, when it is formed on Si, a silicide layer can be formed between the Si interface and Mo by simply depositing it. The thickness of the silicide layer can be controlled by ion energy. Furthermore, conventionally, after deposition, a mask was formed in a PR process and a molybdenum pattern was formed by etching, but by using the principle of the present invention, the necessary molybdenum pattern can be directly formed on the sample. Therefore, the present invention has significant effects on molybdenum deposition or patterning in electronic device manufacturing processes.
第１図は本発明の第１の実施例を示す構成図、
第２図は第２の実施例を示す構成図である。
１１，２１……真空チヤンバー、１２，２２…
…アルゴンビームイオン源、１３，２３……ガス
導入口、１４，２４……MoF6の分子又は解離し
た原子、１５，２５……アルゴンイオンビーム、
１６，２６……試料、２７……偏向電極。
FIG. 1 is a configuration diagram showing a first embodiment of the present invention,
FIG. 2 is a configuration diagram showing a second embodiment. 11, 21... vacuum chamber, 12, 22...
...Argon beam ion source, 13,23...Gas inlet, 14,24... MoF6 molecules or dissociated atoms, 15,25...Argon ion beam,
16, 26... Sample, 27... Deflection electrode.
Claims (1)
ームを照射することを特徴とするモリブデンのデ
ポジシヨン方法。1. A molybdenum deposition method characterized by irradiating a sample placed in a MoF 6 atmosphere with an ion beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4783284A JPS60190560A (en) | 1984-03-13 | 1984-03-13 | Deposition method of molybdenum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4783284A JPS60190560A (en) | 1984-03-13 | 1984-03-13 | Deposition method of molybdenum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60190560A JPS60190560A (en) | 1985-09-28 |
| JPH0543789B2 true JPH0543789B2 (en) | 1993-07-02 |
Family
ID=12786325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4783284A Granted JPS60190560A (en) | 1984-03-13 | 1984-03-13 | Deposition method of molybdenum |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60190560A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6324033A (en) * | 1986-07-16 | 1988-02-01 | Nippon Kokan Kk <Nkk> | Production of metallic material by utilizing chemical vapor deposition |
-
1984
- 1984-03-13 JP JP4783284A patent/JPS60190560A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60190560A (en) | 1985-09-28 |
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