JPH06110197A - Formation of mask forming fine pattern and device therefor - Google Patents

Abstract

PURPOSE:To improve the productivity and reliability in the production of semiconductor devices and liquid crystal devices by forming the parts corresponding to a resist mask by gaseous molecule adsorption in a vacuum and making continuous treatment from film deposition on a substrate to mask forming and etching in a vacuum. CONSTITUTION:The substrate is set in a cleaning chamber 6 through a loading chamber 1, a vacuum sepn. chamber 2, etc., and the oxidized film, etc., formed on the substrate surface are removed by sputtering and etching using Ar ions. The substrate is then set in a sputtering chamber 7 and an aluminum film is formed on the substrate surface by film formation by sputtering. Further, the substrate is set in a resist forming chamber 8 and a retrafluorodisilane film is formed on the substrate. The retrafluorodisilane film is then polymerized by a UV lamp to form a resist film. This substrate is then set through a transporting chamber, etc., into an EB exposing chamber 11 where the substrate is exposed by an electron beam. The film forming the polymer is evaporated in the parts irradiated with the electron beam. The mask of the resist film is thus formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing device for forming a fine pattern of a semiconductor device or a liquid crystal display device, and in particular, after forming a semiconductor element, the wiring is arbitrarily formed according to the purpose. The present invention relates to a fine pattern forming technique suitable for manufacturing a semiconductor device having combined processing performance and correcting a partial defective portion.

[0002]

2. Description of the Related Art As semiconductor devices have improved in performance, semiconductor device systems using them have been used not only in computers but also in control units of various devices. However, the sophistication of the system has made the usage of semiconductor devices complicated. Therefore, it is necessary to provide the semiconductor device with a processing performance suitable for the intended purpose and to simplify the usage method of the semiconductor device. Therefore, it is possible to produce the semiconductor device according to the intended processing performance. It has become important. In order to match the processing performance of a semiconductor device with the target processing performance, a pattern forming technique capable of arbitrarily forming wiring according to the processing performance has become important.

Further, the number of elements and the number of pixels are increased due to the high integration of semiconductor devices and the increase in screen size of liquid crystal display devices, and it is important to correct partial defective portions in order to improve the yield of finished products. ing. As a method of forming such an arbitrary pattern wiring, there is JP-A-63-164240.
In this conventional technique, the insulating film is removed by using the focused ion beam and the MO wiring is formed by laser CVD. By controlling the focused ion beam and the laser, any pattern wiring can be formed. However, in the focused ion beam, it is necessary to use a liquid metal ion source in order to obtain a fine ion beam, which becomes a pollution source when forming a semiconductor element. Further, in the laser CVD, there is a problem that it is difficult to control the type of film to be formed and the characteristics of the film, and it is not possible to form a highly reliable wiring.

A method of manufacturing a semiconductor device may be used as a method for improving the reliability of the element. In this method, film formation by sputtering, vapor deposition, CVD, etc. in vacuum, resist coating in the atmosphere, exposure Since the development process, the pattern formation according to the resist mask by the plasma etching in the vacuum processing chamber, and the resist film removal by the ashing process are performed through many steps, there is a problem that the production cost becomes high.

[0005]

In the method of manufacturing a semiconductor device described in the prior art, since a resist is used for pattern formation, the processed substrate must be processed both in vacuum and in the atmosphere, and continuous processing is required. Is difficult to perform, and the steps of coating and removing the resist are required independently, which increases the production cost.

In the present invention, as a first solution means,
The first and third objects are to supply a material that causes two or more kinds of chemical changes including polymerization in the form of gas by energy beams having different energy levels, and form a film on a processed substrate cooled to a low temperature. Then, the polymerization reaction is caused by the first energy beam, and the mask is formed by the decomposition, the cross-linking reaction, etc. by the exposure by the second energy beam, and the second and fourth objects are created as described above. This was achieved by allowing continuous processing in vacuum by etching with a mask.

Further, as a second means for solving the problems, the first purpose is to provide a temperature difference between the gas supply system and the substrate to be processed, and the gas is changed into a solid substance film on the basis of the temperature difference, and at the same time, energy is reduced. A step of supplying a gas substance, which is transformed into a substance having a high vapor pressure by irradiation with a beam, onto a substrate to be processed, and a step of cooling the substrate to be processed to form a film in which the gas substance is solidified on the substrate. Then, this film is exposed to an energy beam in a predetermined pattern, and the film in the exposed area is changed to a substance with a high vapor pressure and selectively removed outside the processing system to solidify the gas substance. And a step of forming a mask pattern as described above. That is, a gas material is solidified by freezing on a substrate to form a film, which is used as a mask material, and a mask pattern is formed by irradiating and exposing this with an energy beam according to a predetermined pattern. Is. The film in the area exposed by irradiation is decomposed, gasified and removed, and the unexposed area remains as a mask pattern. If the mask becomes unnecessary, it can be easily gasified and removed by raising the temperature of the substrate above the freezing temperature.

Therefore, in the present invention, it is important that the substrate to be processed is cooled and maintained at a temperature at least below the temperature at which the gas substance is frozen in each stage of the mask formation. Further, the energy beam is composed of an electron beam or other light such as ultraviolet rays, X-rays or lasers, and the exposure method is either direct drawing or exposure through a predetermined elaborate mask. To do.

The gas supply system is such that it is decomposed into an oxidizing substance or a reducing substance upon irradiation with an energy beam and changes from a gas to a solid substance film on the basis of the temperature difference between the gas supply system and the substrate to be processed. A mixture of one gas substance and a second gas substance that changes into a substance having a high vapor pressure by the oxidation or reduction action of the decomposition product of the first gas substance is desirable. In any case, the gas substance must be capable of solidifying (freezing) to form a mask material.

As a preferable example of the gas supply system,
Examples of the first gas substance (a gas that generates an oxidizing or reducing substance upon exposure) include xenon difluoride gas XeF ₂
A compound of a rare gas element and a halogen element such as [solid having a gas pressure of 4 Torr at room temperature], ClF ₃ [melting point-76.
3 [deg.] C.], BrF [melting point-33 [deg.] C.] and the like, and a second gas substance (having a masking function by freezing, the first gas substance reacts with the gas decomposed by exposure to gasify). For example, Si (OCH ₃ ) ₄ [melting point-4 ° C.] or tetraethyl orthosilicate (abbreviated as TEOS) Si (O
Organosilane gas such as C ₂ H ₅ ) ₄ [melting point-77 ° C], other P (OCH ₃ ) ₃ [melting point-78 ° C], PO (OC
H _{3) 3} [mp -46.1 ° C.], B (OCH _{3) 3} [mp -
23.9 ° C.] and the like.

The second object is to form a predetermined film on a predetermined substrate, to form a mask pattern on the film formed by the film forming process, and to form the mask pattern. In the pattern forming method, which comprises a step of selectively etching and removing the film using a mask formed by the above method, and a step of removing the mask, the mask pattern forming step achieves the first object. It is achieved by a pattern forming method configured by a mask forming method that can be performed.

The above film forming step, the mask pattern forming step, and the step of selectively etching and removing the film using the mask formed in the mask pattern forming step,
A series of steps consisting of the step of removing the mask,
The process can be performed continuously without breaking the vacuum system.

If the substrate is a semiconductor substrate incorporating a semiconductor element and the film forming step is a step of forming one or both of an insulating film and a conductor film, a multilayer wiring structure is formed on the semiconductor substrate. Can form a body.

Further, the substrate is a transparent insulating substrate such as a glass substrate, and the film forming step is performed by at least a gate electrode forming conductor film, a gate insulating film, a semiconductor film, a source film.
A liquid crystal display active matrix can be formed on the transparent insulating substrate by forming the drain and the pixel electrode forming conductor film. The film forming step may be, for example, sputtering with plasma or C
Well-known film forming methods such as VD can be used.

The third object is to provide a means for providing a temperature difference between the gas supply system and the substrate to be processed, and to change the gas into a solid substance film based on this temperature difference, and also to change the quality by irradiation of an energy beam and to vaporize it. A means for supplying a gas substance that changes into a substance having a high pressure onto the substrate to be processed, a means for cooling the substrate to be processed to form a film on which the gas substance is solidified, and an energy beam for this film. Irradiation exposure is performed in a predetermined pattern, and the film in the irradiation exposure area is changed to a substance with a high vapor pressure and selectively removed from the processing system,
And a means for forming a solidified film of a gas substance remaining in the unirradiated region as a mask pattern. Further, each of the means for forming a mask includes means for holding the substrate to be processed on a sample table that is cooled and held at a temperature below the temperature at which the gas substance freezes at least.

The fourth purpose is to form a film on a predetermined substrate by a film forming means, a means for forming a mask pattern on the film formed by the film forming means, and a mask pattern forming means. In a pattern forming apparatus comprising means for selectively etching and removing the film using a mask formed by the above, and means for removing the mask, the mask pattern forming means achieves the third object. This is achieved by a pattern forming device configured by a mask forming device that can be used.

The means for removing the mask can be constituted by means for heating the substrate to a temperature above the freezing temperature of the mask, for example, one provided with a heater on the sample table.

In order to utilize the features of the present invention, the film forming means, the mask pattern forming means, the means for selectively etching and removing the film by using the mask formed by the mask pattern forming means, and the mask removal It is desirable that the series of means including the means for performing is continuously performed through a common transfer chamber without breaking the vacuum system.

As the film forming means, a plurality of film forming chambers may be provided, one of which may be a sputtering film forming chamber and the other may be a CVD film forming chamber.

A plasma etching chamber or an etching chamber by introducing an etching gas can be used as a means for selectively removing the film by etching.

As a means for forming the mask pattern, a gas adsorption exposure chamber is provided, and the gas adsorption exposure chamber has a gas supply port and a cooling means for freezing the supplied gas as a solid substance film on the substrate. It is possible to provide a sample stage provided with, a means for irradiating and exposing the film with an energy beam in a predetermined pattern, and an exhaust system.

[0022]

In the first solution, incident gas molecules are adsorbed on the surface of the substrate cooled to the solidification temperature of the gas or lower. Therefore, it is 1 in the pressure range of 100Pa-0.1Pa.
It is possible to form a solidified film having a thickness of 1 to 2 μm within 1 minute. By irradiating this film with light such as ultraviolet rays, a polymerization reaction is caused to increase the solidification temperature of the formed film and prevent vaporization at room temperature. Next, by exposing with the second energy beam, the substance forming the film is decomposed and the vapor pressure is increased, and the substance is evaporated and removed to form a mask. Alternatively, a mask is formed by causing a cross-linking reaction in the material having the film formed by the exposure with the second energy beam to cause a difference in etching rate, and etching away the unexposed portion by dry etching.

Further, in the second solving means, gas molecules incident on the surface of the substrate cooled to below the freezing temperature of the gas of the supply gas system and adsorbed are frozen to form a film, for example, as an electron beam as an energy beam. By irradiating and exposing to light such as a beam or ultraviolet rays, the first gas substance that generates an oxidizing substance and a reducing substance in the gas contained in the frozen film is decomposed. By oxidizing or reducing substances generated from the first gas substance, gas molecules consisting of the frozen second gas substance undergo oxidation reaction or reduction reaction to decompose and increase vapor pressure of the gas molecules, In the region exposed to the irradiation of electron beam or ultraviolet ray, the gas is evaporated and the frozen film disappears. A frozen film remains in a region that is not exposed to irradiation, and a pattern of a frozen film is created. Using this film as a mask pattern, if the underlying substrate to be processed is selectively removed by plasma etching,
A pattern obtained by transferring a mask pattern formed by irradiation with light such as an electron beam or ultraviolet light can be formed on the substrate to be processed.

As described above, in the present invention, since the portion corresponding to the conventional resist mask is formed by adsorption of gas molecules in a vacuum, the steps from film deposition on the substrate to mask formation and etching are continuously performed in a vacuum. it can.

[0025]

【Example】

[I] First Embodiment A device configuration diagram according to a first embodiment of the present invention will be described below with reference to FIG.

(1) Device configuration example The device configuration is as follows: load chamber: 1, vacuum separation chamber 1: 2, transfer chamber 1: 3, vacuum separation chamber 2: 2 ', transfer chamber 2: 3', transfer chamber 3: 3. ″, The transfer chamber 4: 3 ″ ″, and the unload chamber: 4 are separated in vacuum by the gate valve: 5,
It is connected. A cleaning chamber: 6 and a sputtering film forming chamber: 7 are connected to the transfer chamber 1 via a gate valve: 5. A resist forming chamber: 8 and a substrate temperature control chamber: 9 are similarly connected to the transfer chamber 2 via a gate valve: 5. Anti-vibration chamber: 10 and gate valve: 5 in the transfer chamber 3.
The electron beam exposure chamber: 11 is connected via the, and the developing chamber: 12 is connected by the gate valve: 5. The transfer chamber 4 has an etching chamber: 13 and a resist removal chamber: 14.
Are connected by a gate valve: 5.

The transfer chambers 1 to 4 have the same structure, and a center arm type substrate transfer robot (not shown) is provided at the center, and transfers a substrate: 50 between transfer chambers and from the transfer chamber to each processing chamber. You can do it. An exhaust system (not shown) is provided in each transfer chamber,
It can be maintained in a vacuum of 0-4 Pa.

The load chamber 1 is provided with a center arm type substrate transfer robot (not shown), an exhaust system and a gas purge system. The load chamber is brought to atmospheric pressure by the gas purge system, the gate valve: 15 is opened, and the substrate: 50 is carried into the load chamber: 1 by the robot arm. The load chamber 1 is evacuated to a vacuum by the exhaust system, the gate valve: 5 on the vacuum separation chamber 1: 2 side is opened, and the substrate: 50 is placed on the stage: 17 of the vacuum separation chamber 1: 2 by the robot arm.

As shown in FIG. 2, the vacuum separation chamber: 2 has a cryopanel surface: 18 at the top and bottom, and is constructed so that moisture and organic gas cannot pass through. In the center, there is a stage: 17 which moves up and down by a stage up-and-down mechanism: 19 and can transfer a substrate: 50 from a robot arm. Further, an exhaust system (not shown) is provided, and the chamber is evacuated to a vacuum of 10 to ⁵ to 10 ⁶ Pa. These prevent the entry of moisture from the load chamber 1 into the transfer chamber 1 and the entry of organic gas such as resist forming gas from the transfer chamber 2: 3 '.

A normal parallel plate electrode (not shown) is provided in the cleaning chamber 6 and is configured to generate plasma by a high frequency power source of 13.56 MHz. Ar gas is supplied from a gas supply source (not shown), exhausted from an exhaust system (not shown), the pressure in the processing chamber is set to 1 Pa, plasma is generated between the parallel plate electrodes, and the substrate surface placed on the electrodes is hit with Ar ions. Clean the surface.

In the sputtering chamber: 7, a usual magnetron type sputtering electrode (not shown) is attached, and the substrate:
An aluminum film is formed on the surface of 50. Sputter deposition chamber: 7
Has an Ar gas supply source and a vacuum exhaust system (not shown), and can evacuate the chamber to a vacuum of 10 ⁶ to 10 ⁷ Pa. Ar gas is supplied, and the pressure is set to 0.5 Pa, for example, to form a film by sputtering.

As shown in FIG. 3, the resist forming chamber 8 has a suction stage 20 and is transferred by a robot arm from a transfer chamber 2: 3 ', and a substrate 50 is placed thereon. An electrostatic chucking mechanism (not shown) is incorporated in the chucking stage: 20. By applying a voltage from the electrostatic chucking power source: 22, the substrate: 50 is chucked onto the stage surface. Further, the adsorption stage: 20 has a refrigerator: 21 to -5.
A refrigerant of 0 ° C to + 50 ° C can be supplied, and He gas is supplied from He supply source: 23 between the adsorbed substrate: 50 and stage: 20, and 8 Pa to 10 Pa.
The temperature of the substrate is controlled to be substantially the same as that of the adsorption stage: 20 by controlling the pressure to be the set pressure of Pa. A quartz window: 25 is provided on the opposite surface of the adsorption stage: 20, and an ultraviolet lamp: 26 is incorporated outside the quartz window.

A gas supply ring 24 is provided in the resist forming chamber 8 and a resist forming gas is supplied from a gas supply port 28. Further, the inside of the resist forming chamber 8 is evacuated to a vacuum through an exhaust port 29. A laser interference film thickness measuring device: 27 is provided on the upper part so that the film thickness can be measured when the resist film is formed.

Substrate temperature control chamber: 9 has a resist forming chamber:
An adsorption stage (not shown) similar to that of No. 8 is provided. Here, the temperature of the adsorption stage is set to room temperature, and the temperature of the substrate: 50 cooled in the resist forming chamber: 8 is returned to room temperature.

As shown in FIG. 4, the anti-vibration chamber 10 comprises a delivery chamber 30, a stage 31, a vertical mechanism 32, a bellows 33, and an air spring 34. The delivery chamber: 30 and the gate valve 5 are connected by a bellows: 33, and an air spring: 34 supports the contraction of the bellows so that vibration is not transmitted. Delivery room:
Inside 31 is an up-and-down mechanism: 32 A stage that moves up and down
31 is provided, and the substrate: 50 is transferred and placed on this by a robot arm (not shown) in the transfer chamber 3: 3 ″. The substrate: 50 on the stage: 31 is EB by the robot arm (not shown) on the EB exposure chamber 11 side.
Exposure chamber: It is transported to the 11 side.

The EB exposure chamber 11 has the same structure as that of an ordinary electron beam exposure apparatus.

As shown in FIG. 5, the developing chamber 12 is provided with a suction stage 44 which is similar to the resist forming chamber 8. 13.56 MHz high frequency power source on the opposite surface: 41
There is a cathode electrode: 40 connected to the adsorption stage:
44 is connected to ground. Processing gas supply port: 4
2. Exhaust port: 43 is provided, from 100Pa to 1
The electric discharge can be performed at a pressure of Pa.

The etching chamber 13 has the same structure as the developing chamber 12. The resist removing chamber: 14 is a plasma processing chamber configuration of a normal parallel plate electrode configuration, and the substrate: 50
A heating mechanism (not shown) is incorporated on the side on which the resist is removed by heating the substrate: 50. The unload chamber: 4 has the same configuration as the load chamber: 1. The substrate: 50 is taken out from the transfer chamber 4: 3 ''', the pressure in the unload chamber: 4 is returned to atmospheric pressure, and the gate valve: 16 is opened and taken out.

(2) Example of Processing Method 1 The configuration of the apparatus of the present invention has been described above. Next, the processing method of this apparatus will be described with reference to FIG.

A substrate: 50 is set on an electrode (not shown) of a cleaning chamber: 6 through a load chamber: 1, a vacuum separation chamber 1: 2, and a transfer chamber 1: 3, and the substrate is subjected to sputter etching with Ar ions: The oxide film formed on the surface of 50 and the adsorbed gas such as moisture are removed. Next, substrate: 50
Was set in the sputter chamber: 7 via the transfer chamber 1: 3, and the aluminum film: 51 was formed on the surface of the substrate: 50 by sputtering film formation.
To form.

Further, the substrate: 50 is transferred through the transfer chamber 1: 3, the vacuum separation chamber 2: 2 ', and the transfer chamber 2: 3', and then the resist formation chamber:
Set to 8.

[0042]

[Chemical 1]

The tetrafluorodisilane represented by Chemical formula 1 was supplied in a gas form from a gas supply source (not shown), and was blown from the gas supply ring: 24 into the resist forming chamber: 8.
Adjust the pressure to 100 Pa. Substrate: 50 is adsorbed by adsorption stage: 20, stage: 20 and substrate: 5
The temperature of the substrate: 50 is cooled to the same temperature as that of the stage: 20 by heat conduction by He supplied between 0 and 0. Adsorption stage: 20 is set to -40 ° C in order to adsorb tetrafluorodisilane gas efficiently. The resist forming chamber: 8 except the adsorption stage: 20 is at room temperature (20
(° C.) so that tetrafluorodisilane gas is not adsorbed.

A tetrafluorodisilane film having a thickness of 200 nm is formed on the substrate: 50 in 10 seconds, and the ultraviolet lamp: has a larger energy than the Si-H bond than the 26, and filters ultraviolet light having a wavelength lower than the Si-Si bond. Then, the fluorosilane gas adsorbed on the substrate 50 is irradiated with the fluorosilane gas. Tetrafluorodisilane gas is Si-
The H bond is broken, H becomes H _{2 and} is vaporized and removed, and Si is bonded to each other to form a linear polymer. This operation is repeated 5 times to form a resist film: 52 having a thickness of 1000 nm. The reason why the formation of the film: 52 is divided and carried out in this way is to efficiently remove the hydrogen gas generated by the irradiation of ultraviolet rays and to form the linear polymer. Also at this time,
The film thickness of the film: 52 is measured by a laser interference film thickness measuring device: 27 and controlled so that the film thickness does not vary.

After formation of the resist film: 52, the substrate: 5
0 is set in the substrate temperature control chamber: 9 through the transfer chamber 2: 3 '. Substrate temperature control room: The adsorption stage of 9 has room temperature (20
℃) is set, and the substrate: 50 is adsorbed to this,
Substrate: The temperature of 50 is brought to room temperature. Since the tetrafluorodisilane adsorbed on the surface of the substrate: 50 is a linear polymer, the vapor pressure is reduced and a film is formed even at room temperature.

This substrate: 50 is set in the EB exposure chamber: 11 through the transport chamber 2: 3 ', the transport chamber 3: 3'', and the vibration isolation chamber: 10. When exposed by the electron beam, the Si-Si bond forming the linear polymer is broken at the portion hit by the electron beam, so that SiF _{2 is} vaporized and a mask of the resist film: 52 and a mask of 53 are formed.

The substrate: 50 on which the mask: 53 is formed is conveyed to the etching chamber: 13 and plasma etching is performed with a mixed gas of BCl ₃ gas and Cl ₂ gas, and the aluminum film: 51 is etched according to the resist mask. Resist removal room:
In 14, the linear polymer of tetrafluorodisilane is removed by etching with CF ₄ gas. Aluminum film:
Mask 51 is not etched with CF ₄ gas, so mask:
Only 53 is selectively removed. Unload this:
From 4, the wiring film forming work is completed.

(3) Example of Processing Method 2 Another processing method will be described with reference to FIG.

Another processing method of the first embodiment, in which the resist film is formed of two layers, will be described. The change in the device configuration is that a tungsten film: 54 is formed in place of the aluminum film: 51 in the sputtering film forming chamber: 7. Therefore, the target is changed from aluminum to tungsten.

Differences between the present processing method example and the processing method example 1 will be mainly described.

The substrate: 50 is loaded from the load chamber 1 in the same manner as in Example 1 of the processing method, cleaned, and then set in the sputtering film forming chamber: 7. Where the tungsten film:
54 is formed. Next, resist forming chamber: 8 and substrate: 50
Is set and cooled in the same manner as in Treatment Method Example 1, and an ultraviolet curable organic material monomer (dicyclopentadiene diacrylate or the like) is gasified and supplied from a gas supply ring: 24 to form a tungsten film: 54. The first layer film: 55 is formed by adsorbing it on the surface of the substrate: 50. After forming this first layer film: 55 to a thickness of 1500 nm, it is irradiated with ultraviolet rays from an ultraviolet lamp: 26 to cure the first layer film: 55.

Next, the same tetrafluorodisilane as in Treatment Method Example 1 was gasified and supplied from a gas supply ring,
A second resist film 56 having a thickness of 200 nm is formed by adsorption, and ultraviolet rays are irradiated to promote polymerization.
After the temperature of the substrate: 50 is returned to room temperature in the substrate temperature control chamber: 9, the substrate: 50 is transferred to the EB exposure chamber: 11 and exposed by electron beam exposure. The part hit by the electron beam is
Since the Si-Si bond forming the linear polymer is broken, S
It becomes iF _{2 and} vaporizes to form a mask pattern: 56 ′.

Next, it is conveyed to the developing chamber 12 and processed by reactive ion etching using oxygen gas plasma. The polymer of tetrafluorodisilane reacts with oxygen gas plasma to form silicon oxide, which prevents etching. On the other hand, in the portion where the second resist film 56 of tetrafluorodisilane was removed by electron beam exposure, the first material film 55 of the organic material was exposed, so etching was performed by oxygen gas plasma. Progresses.
As a result, the first-layer film: 55 is etched according to the mask pattern: 56 'of the second-layer resist film: 56, and a mask having a film thickness necessary for etching the tungsten film: 54 can be formed. . Further, when the removal of tetrafluorodisilane by electron beam exposure is insufficient, high-precision mask formation can be performed by etching for a short time with tetrafluoroethylene gas plasma and removing the insufficiently removed portion.

First layer film: 55 Mask: 55 '
After completing the formation of, the substrate: 50 and the etching chamber: 13
Then, it is etched by reactive ion etching using sulfur hexafluoride gas plasma. The tungsten film: 54 becomes tungsten fluoride, vaporizes and etching progresses, and a tungsten film: 54 having a pattern as the mask: 55 'is formed. Mask: 55
The tetrafluorodisilane film 56 ′ on the ′ is etched by sulfur hexafluoride gas plasma during the etching of the tungsten film 54, and is completely removed when the etching of the tungsten film 54 is completed.

The substrate: 50 is transferred to the resist removing chamber: 14, the organic material film is removed by ashing treatment with oxygen gas plasma to form a pattern of only the target tungsten film, and then the substrate: 50 is removed from the unloading chamber: 4. Carry out and complete processing.

Further, in this processing example, the organic material film: 55 is adsorbed on the substrate: 50 and then immediately irradiated with ultraviolet rays to be cured. However, in order to perform exposure with higher accuracy, the surface is flattened. Needs to be converted. For that purpose, after adsorbing the organic material film: 55, the temperature of the substrate: 50 is raised to a temperature at which the organic material film: 55 is softened, thereby fluidizing the organic material film: 55 and flattening the surface, and then ultraviolet rays. And is cured to form a flat organic material film: 55. The resist film 56 of the second layer is formed on this flat film, so that it is less affected by the depth of focus during exposure, and highly accurate masks 55 'and 56' are formed.

Further, FIG. 8 shows a method for flattening the surface of the organic material film: 55 without the influence of the surface pattern density. An organic material film: 55 is adsorbed and formed on a substrate: 50 by the method shown in the above processing method example, and a flat quartz plate: 57 is pressed in a substrate temperature control chamber: 9. The temperature of the adsorption stage is raised to a temperature at which the organic material film: 55 is softened, and the organic material film: 55 is softened and becomes a quartz plate: 57, and ultraviolet rays are irradiated to cure the organic material film: 55 to cure the organic material film. Material film: The surface of 55 is formed flat. By bending the electrostatically attracted adsorption stage into a convex shape, the quartz plate:
57 and the substrate: 50 are separated from each other. The subsequent processing method is the same as the processing method example 2.

(4) Example 3 of processing method

[0059]

[Chemical 2]

Here, Ph represents a phenyl group.

In this example of the processing method, a method of forming a mask pattern will be described by using the fact that the resist material undergoes a crosslinking reaction upon exposure to cause a difference in etching rate. As the resist material, diphenylsilane shown in Chemical formula 2 is used.

Differences from the processing method example 2 of this processing method example will be described.

First, the substrate is cooled in the same manner as in the second example of the processing method, and the ultraviolet-curable organic material monomer is supplied in the form of gas from the gas supply ring 24 and is adsorbed on the substrate on which the tungsten film is formed. After the film is formed to a thickness of 1500 nm, it is irradiated with ultraviolet rays from an ultraviolet lamp: 26 to be cured. Diphenylsilane is made into a gas and supplied from a gas supply ring to form a 200 nm film by adsorption, and the Si—H bond is cut by irradiation with ultraviolet rays to promote linear polymer formation. After the temperature of the substrate is returned to room temperature in the substrate temperature control chamber: 9, the substrate is transferred to the EB exposure chamber: 11 and exposed by electron beam exposure. The part hit by the electron beam is Si-
The bond of Ph is broken and the bond of Si-Si is expanded to be in a three-dimensional crosslinked state.

Next, it is conveyed to a developing chamber: 12 and processed by reactive ion etching using ethylene tetrafluoride gas plasma. Since the cross-linking reaction does not proceed in the unexposed portion, the etching rate is fast, and the cross-linking reaction proceeds in the exposed portion, so that the etching rate becomes slow. Therefore, the exposed portion remains and a resist mask is formed.

Next, the gas is switched to oxygen gas, and the reactive ion etching is performed by oxygen gas plasma. Since the resist mask formed by the reactive ion etching using the tetrafluoroethylene gas plasma is made of a silicon-based polymer, it reacts with the oxygen gas plasma to form silicon oxide, which prevents the etching from proceeding. On the other hand, in the portion where the film of the organic material is exposed, the etching proceeds due to the oxygen gas plasma. As a result, the organic material film is etched according to the resist mask, and a mask having a film thickness necessary for etching the tungsten film can be formed. Subsequent processing is the same as that of the processing method example 2 and is therefore omitted.

In the above-mentioned first embodiment, the electron beam exposure has been mainly described as the exposure method, but the exposure method is not limited to this, and the exposure is performed by a light such as a stepper or a laser. Obviously, light beam exposure, etc. can be used.

Further, in the above-mentioned first embodiment, the example in which the sputtering method is applied as the film formation is described, but it goes without saying that all the conventionally known film formation methods such as the vapor deposition method and the cluster ion beam method can be applied. . As for the etching method, all dry etching methods can be applied. Further, the explanation has been made mainly on ultraviolet rays as the energy beam which causes the polymerization reaction, but the invention is not limited to this.
An electron beam or an ion beam may be used as long as it causes a reaction.

[I] Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIGS.

<First Embodiment 1> (1) Apparatus Configuration Example: FIG. 9 is a schematic plan view showing the overall configuration of a pattern forming apparatus according to the second embodiment of the present invention.
It is an example of a device configuration that can realize the first to fourth objects of the present invention, and will be described below with reference to this drawing.

There is a transfer chamber: 101 in the center, and a load lock chamber: 104, a film forming chamber A: 105, a film forming chamber B: 106, a gas adsorption exposure chamber: 107, and an etching chamber:
108, a heating degassing chamber: 109 are provided. The chambers are separated from each other by a gate valve: 103a, and a transfer chamber: 101 is provided with a center arm type substrate transfer robot arm: 102 so that the substrates can be transferred between the chambers. The load lock chamber 104 is also provided with a gate valve 103b on the atmosphere side so that a substrate can be taken in and out between the transfer chamber in the atmosphere and in the vacuum. Further, the load lock chamber 104 is provided with a stage 110 for holding the substrate, an exhaust system (not shown), and a gas purge system (not shown).

The structure and function of each processing chamber will be described in detail below with reference to FIGS. 10 to 14. FIG. 10 shows a film forming chamber A:
An example of a sectional configuration of 105 is shown. In the film forming chamber A: 105, an exhaust port connected to an exhaust system not shown: 120, a gas supply port connected to a gas supply source not shown: 121, a stage incorporating a heating mechanism not shown: 122, 13.56 MH
An electrode: 123 connected to a high frequency power source for z: 124 is provided. By supplying high frequency power from a high frequency power source: 124, discharge plasma can be generated between the stage: 122 and the electrode: 123.
The film forming chamber A: 105 has a structure capable of forming a film by a plasma CVD process by introducing a predetermined gas from a gas supply port: 121, but other structures such as a predetermined target (insulator It can also be configured as a sputter film forming chamber using quartz or the like for forming a film.

FIG. 12 shows an example of a sectional structure of the film forming chamber B: 106. The film forming chamber B: 106 is provided with an exhaust port: 130 connected to an exhaust system (not shown), a gas supply port: 131 connected to a gas supply source (not shown), and a stage: 132 incorporating a heating mechanism (not shown). This film forming chamber B: 10
6 also has a structure in which a film can be formed by a CVD process by introducing a predetermined gas from a gas supply port: 131, but other structures, for example, a predetermined target (a metal if a conductor is formed into a film) ) Can be used as a sputtering film forming chamber.

FIG. 12 shows an example of a sectional structure of the gas adsorption exposure chamber: 107. This gas adsorption exposure chamber: 107 has a gas supply port: 1 on the substrate to be processed mounted on the stage: 142.
It has the function of forming a film by freezing the gas supply system supplied from 41 and the function of forming a mask pattern by exposing the film to an electron beam. That is, the gas adsorption exposure chamber: 107 is a stage in which an exhaust port: 140 connected to an exhaust system (not shown), a gas supply port: 141 connected to a gas supply source (not shown), an alignment mechanism (not shown), and a cooling mechanism are incorporated. : 142 is provided, and a bellows: 1 from a refrigerator (not shown) is provided on this stage: 142.
Refrigerant is supplied through 43. Above the stage: 142, there is a differential exhaust chamber: 144, which is connected to the gas adsorption exposure chamber: 107 through an opening: 145. The differential exhaust chamber: 144 is exhausted by an exhaust system (not shown) so that the gas in the gas adsorption exposure chamber: 107 does not flow into the electron beam generating chamber: 146 connected to the differential exhaust chamber: 144. The electron beam source of the electron beam generating chamber: 146 has a structure in which the position of the electron beam can be controlled by an electron beam controller: 147. At the time of exposing the electron beam, the electron beam controller 147 has a function of generating a predetermined pattern for direct writing, but an exposure mask: an existing mask having a predetermined pattern formed in the exposure chamber 107. You may make it expose using it.

A lamp heater 148 is provided above the stage 142 so that the surface of the stage can be heated. That is, forming a mask,
This is used to remove the gas adsorbed on the stage: 142 etc. by turning on the substrate (for example, a wafer) and then turning it on to remove the gas adsorbed on the stage, so that the gas emission from the wall is kept constant. It is possible to stabilize the processing.

FIG. 13 shows an example of a sectional structure of the etching chamber 108. The etching chamber: 108 is provided with an exhaust port: 150 connected to an exhaust system (not shown), a gas supply port: 151 connected to a gas supply source (not shown), a stage: 152 incorporating a cooling mechanism (not shown), and a counter electrode: 153. Has been. The stage: 152 is insulated by an insulating material: 154, and a 13.56 MHz high frequency power source: 155 is connected. Counter electrode: 153 is connected to ground. By supplying high-frequency power from the high-frequency power source: 155, discharge plasma can be generated between the stage: 152 and the counter electrode: 153. This etching room: 1
08 has a plasma etching processing function,
Depending on the material of the substrate to be processed, the etching gas may be simply introduced from the gas supply port: 151 without performing plasma processing.

FIG. 14 shows an example of a sectional structure of the heating degassing chamber 109. The heating degassing chamber: 109 is provided with an exhaust port: 160 connected to an exhaust system (not shown) and a stage: 161 incorporating a heating mechanism (not shown). The heating degassing chamber 109 has a function of heating the freezing mask pattern formed on the substrate to be processed after the etching process to gasify it and remove it outside the system.

(2) Example of Mask Forming and Pattern Forming Method Using the Same: The structural example of the apparatus according to the second embodiment of the present invention has been described above. Next, the processing method using this apparatus will be described. An example will be described with reference to FIGS. As the substrate 170 to be processed, as shown in FIG. 15A, a semiconductor device is formed in advance in its main surface, and a single-layer wiring 172 is formed on this substrate via an insulating film 171. A substrate (wafer) was used. And
In this example, a two-layer wiring 177 is formed on a one-layer wiring 172 via an insulating layer 173 as shown in FIG. The two-layer wiring 177 can also be used as a modification of the existing one-layer wiring 172.

The processing steps will be sequentially described below.

1) Loading of substrate to be processed 170: First, as shown in FIG. 9, the substrate is placed on the stage 110 of the load lock chamber 104 by the gate valve 103b. The load lock chamber is evacuated, and when the pressure becomes equal to that of the transfer chamber: 101, the gate valve: 103a is opened, and the robot arm: 102 transfers the substrate to the transfer chamber: 10
Put in 1.

2) Formation of Insulating Film in Film Forming Chamber A: 105 Next, as shown in FIGS. 9 and 10, the gate valve of the film forming chamber A: 105 is opened and the substrate is set on the stage: 122. . The structure of the surface of the substrate carried in is as shown in FIG. 15A, and the insulating film formed on the Si substrate 170:
The single layer wiring 172 is formed on the 171. In the film forming chamber A: 105, after closing the gate valve, silane gas and nitrogen dioxide gas were supplied from the gas supply port: 121,
While maintaining the pressure of 10 Pa while exhausting from the exhaust port: 120, high frequency power is supplied from the high frequency power source: 124 to generate plasma in the film forming chamber A: 105. Silane gas and nitrogen dioxide gas are excited by plasma and react on the surface of the substrate by plasma CVD to form a silicon dioxide insulating film: 173 [shown in FIG. 15 (b)].

3) Formation of Mask Pattern in Gas Adsorption Exposure Chamber: 107 Next, as shown in FIGS. 9 and 12, the substrate is placed in the gas adsorption exposure chamber: 107 and set on the stage: 142. He gas is supplied from a supply source (not shown) between the substrate and the stage to improve heat conduction between the substrate and the stage and efficiently cool the substrate to the stage temperature. The stage temperature is cooled to -30 ° C, and the substrate is also cooled to almost the same temperature. Gas supply port: 141, TetramethoxysilaneSi (OC
H ₃ ) ₄ ] (hereinafter abbreviated as TMOS) gas and xenon difluoride (XeF ₂ ) gas are supplied. TMOS gas has a melting temperature of −4 ° C., and freezes on the substrate surface cooled to −30 ° C. to form a film: 174 [shown in FIG. 15 (b)]. The xenon difluoride gas is a solid having a gas pressure of 4 Torr at room temperature, and is occluded in the frozen film on the substrate surface together with the TMOS gas. The film formation rate of the frozen film is limited by the gas supply amount, and a film thickness of 2 μm can be formed in about 30 seconds. The gas supply is stopped, the gas is exhausted from the exhaust port: 140, and the pressure of the gas adsorption exposure chamber: 107 is set to 10 to ⁴ Pa. The position of the substrate is adjusted to a predetermined position by an alignment mechanism (not shown), an electron beam is generated from an electron beam source in the electron beam generation chamber 146, and an electron beam is generated in an arbitrary pattern set by an electron beam controller 147. Control to expose the beam.

In the frozen film of TMOS and xenon difluoride irradiated with an electron beam: 174, xenon difluoride is excited by the electron beam and decomposed into xenon and fluorine. The generated fluorine reacts with TMOS and decomposes TMOS into SiF ₄ , CO, HF and the like. Since these decomposed products have a higher vapor pressure than TMOS, they are gasified and exhausted, and the regions not irradiated with the electron beam remain as a frozen film, and as shown in FIG. 175 is formed. As an exposure light source,
As described above, it goes without saying that other energy beams such as ultraviolet rays may be used instead of the electron beam.

4) Low temperature plasma etching using an ice mask in an etching chamber: 108. As shown in FIGS. 9 and 13, the substrate on which the ice mask: 175 was formed was heated within a few seconds so that the temperature did not rise. It is moved to the etching chamber: 108 and set on the cooled stage: 152. He gas is supplied between the substrate and the stage from a gas supply system (not shown) to cool the substrate to −30 ° C.
CF ₄ gas is supplied from the gas supply port: 151, and the exhaust port:
A pressure of 10 Pa is maintained while exhausting from 150, and high frequency power is supplied from a high frequency power source: 155 to a stage: 152 to generate plasma. This allows the ice conjunctiva mask:
Using 175 as a mask, the insulating film 173 is provided with an opening for connection to a two-layer wiring formed in a subsequent step by plasma etching (see FIG. 7D).

5) Removal of ice mask in heated degassing chamber: 109 As shown in FIGS. 9 and 14, after etching, the substrate was put in the heating degassing chamber: 109, and the heated stage: 161.
To heat to several tens of degrees. T forming an ice mask
Since the MOS and xenon difluoride are vaporized by this heating, the ice mask: 175 can be easily removed [Fig.
See (d)].

6) Formation of Conductor Film in Film Forming Chamber B: 106 Next, as shown in FIGS. 9 and 11, the substrate is formed into a film forming chamber B: 1.
It is conveyed to 06 and set on the stage: 132. The substrate is heated to 300 ° C. by a heating mechanism (not shown) of the stage, and while supplying WF ₆ from the gas supply port 131, exhaust gas is exhausted from the exhaust port: 130 and kept at 10 Pa.
As shown in FIG. 15D by D, as a conductor film, W
Membrane: 176 is formed.

7) Patterning of Conductor Film This substrate was transferred to the gas adsorption exposure chamber: 107, and an ice mask 175 having a predetermined circuit pattern was formed by the same method as the mask forming method described above. Is transported to an etching chamber: 108, and the W film: 176 is selectively etched by plasma etching with SF ₆ gas to form a two-layer wiring film: 177 as shown in FIG. Thereafter, the freezing mask is removed in the same manner as the treatment in the heating degassing chamber: 109 in 5) above. Thus, as shown in FIG. 15E, the two-layer wiring film 177 was formed with the interlayer insulating film 173 interposed therebetween. The insulating film and the conductor film were formed and the respective patterning masks were formed. The multilayer wiring structure can be formed on the semiconductor substrate by repeating the above steps as necessary.

As described above, according to the present method, since the mask forming work corresponding to the resist coating work in the atmosphere can be performed in vacuum, a series of pattern forming work can be continuously processed in vacuum. The production process can be reduced. Further, as compared with the conventional technique disclosed in Japanese Patent Laid-Open No. 63-164240, there is no restriction on the film forming method, and sputtering, CVD or the like that can obtain the film characteristics required for the semiconductor device can be used, so that the reliability of the semiconductor device is improved. Can be raised. In this embodiment, the example in which the sputtering method and the CVD method are applied has been described.
It goes without saying that all conventionally known film forming methods such as the cluster ion beam method can be applied. As for the etching method, any method can be applied as long as it can be processed at a temperature at which the mask can be maintained.

In the second embodiment, the case where TMOS and xenon difluoride are used as the gas for the mask has been described. Any substance may be used as long as it is precipitated as and is converted into a substance having a high vapor pressure by redox. As for the redox gas as well, any substance that can be supplied in the same manner and decomposes due to the supply of energy (light, electron beam, ion beam, etc.) from the outside and has a redox action may be used. Therefore, the substrate set temperature is not limited to the temperature of this embodiment, as long as it can supply the masking gas substance described above as a gas and precipitates on the substrate surface.

Although the embodiment in which two kinds of gases are mixed and used as the mask gas has been described, the present invention is not limited to this, and the gas can be supplied as a gas, and the temperature difference between the gas supply system and the substrate can be used. One kind of gas may be used as long as it is deposited as a solid on the surface of the substrate and changes into a substance having a high vapor pressure by supplying energy (light, electron beam, ion beam, etc.) from the outside. Further, it is obvious that the number of gases to be mixed is not limited as long as the same effect is generated by the chain reaction of each gas by mixing two or more kinds of gases.

<Second Example 2> In the second example 1, the semiconductor device is previously formed in the main surface of the sample substrate, and one-layer wiring is formed on the substrate through the insulating film 171. Although a silicon substrate (wafer) on which 172 is formed is used, here, from the formation of the insulating film: 171, one-layer wiring:
Up to 172, the film formation step, the mask formation step, and the pattern formation by the selective etching of the film formation using this mask are repeated by the same method as that of the first embodiment 1 to produce the pattern shown in FIG.
A two-layer wiring film similar to that was formed.

<Third Example 3> In this example, a transparent insulating substrate made of a glass substrate was used as a sample substrate, and a transparent conductive film was previously formed on this sample by a known process. To form a liquid crystal display active matrix.

First, in the same gas adsorption exposure chamber 107 as in the first embodiment, an ice mask pattern for a predetermined gate electrode and pixel electrode is formed. Next, using this mask, selective etching is performed in an etching chamber: 108 to form a gate electrode and a pixel electrode pattern.

Next, an amorphous silicon film containing hydrogen is formed in the film forming chamber B: 106, and similarly, an ice mask is formed and selective etching is performed to form an amorphous silicon semiconductor pattern.

Next, a conductor film for forming source / drain electrodes is formed, and similarly, a freezing mask for forming these electrodes is formed. A source / drain electrode is formed using this mask to form a transistor matrix, which is a liquid crystal display active matrix.

[0095]

According to the present invention, a novel mask forming method which does not require a coating step can be realized, and therefore, a treated substrate, which has been a problem when using a conventional mask pattern, can be placed in a vacuum or an atmosphere. It has been possible to significantly reduce the production cost by eliminating the problems that both processes must be performed, that continuous treatment is difficult, and that the steps of coating and removing the resist are required independently.

Further, according to the present invention, continuous processing in a vacuum can be performed, and at the same time, high quality film formation required for a semiconductor device or a liquid crystal display device can be realized. In addition to improving reliability and reliability,
The yield in manufacturing semiconductor devices and liquid crystal display devices can be improved.

[Brief description of drawings]

FIG. 1 is a plan view showing an apparatus configuration according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing the structure of a vacuum separation chamber according to the first embodiment of the present invention.

FIG. 3 is a sectional view showing the structure of a resist forming chamber in the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing the structure of a vibration isolation chamber according to the first embodiment of the present invention.

FIG. 5 is a sectional view showing the structure of a developing chamber in the first embodiment of the present invention.

FIG. 6 is a process diagram showing a processing method example 1 according to the first embodiment of the present invention.

FIG. 7 is a process diagram showing a second processing method example according to the first embodiment of the present invention.

FIG. 8 is a process drawing showing the method for forming a flat resist film surface in the first embodiment of the present invention.

FIG. 9 is a plan view showing a schematic configuration of a mask and pattern forming apparatus according to a second embodiment of the present invention.

10 is a sectional view of the film forming chamber A in FIG.

FIG. 11 is a sectional view of the film forming chamber B in FIG.

FIG. 12 is a sectional view of the gas adsorption exposure chamber in FIG.

FIG. 13 is a sectional view of the etching chamber in FIG.

FIG. 14 is a sectional view of the heating degassing chamber in FIG.

FIG. 15 is a process drawing that similarly shows the processing procedure in the second embodiment of the present invention.

[Explanation of symbols]

1 ... Load chamber 2 ... Vacuum separation chamber 3
... Transfer chamber 4 ... Unload chamber 5 ... Gate valve 6
... Cleaning room 7 ... Sputtering film forming room 8 ... Resist forming room 9
... Substrate temperature control room 10 ... Vibration isolation room 11 ... EB exposure room 1
2 ... Development room 13 ... Etching room 14 ... Resist removal room 2
0 ... Adsorption stage 24 ... Gas supply port 25 ... UV lamp 1
01 ... Transfer chamber 102 ... Robot arm 103 ... Gate valve 1
04 ... Load lock chamber 105 ... Film forming chamber A 106 ... Film forming chamber B 1
07 ... Gas adsorption exposure chamber 108 ... Etching chamber 109 ... Thermal degassing chamber 1
70 ... Si substrate 171 ... Insulating film 172 ... Single layer wiring 1
73 ... Insulating film 174 ... Freezing film 175 ... Freezing mask 1
76 ... Conductor film (W film) 177 ... Two-layer wiring film

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomoko Hiraiwa 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Stock Engineering Institute, Hitachi, Ltd.

Claims (33)

[Claims] 1. A means for forming a film on a substrate, a means for forming a mask on the film, and a means for etching a film formed on a substrate according to the mask, under the reduced pressure conditions. The pattern forming apparatus, wherein the means for preventing the processing gas from flowing around is provided between the film forming chamber and the mask forming chamber. 2. A means for forming a film on a substrate, a means for forming a mask on the film, and a means for etching a film formed on the substrate according to the mask, under the reduced pressure conditions. The pattern forming apparatus, wherein a seismic isolation mechanism is provided between the exposure chamber and the other processing chambers in the apparatus continuously performed in 1. 3. A means for forming a film on a substrate, a means for forming a mask on the film, a means for etching a film formed on a substrate in accordance with the mask, and a means for removing the mask. A pattern forming apparatus, which is continuously performed under reduced pressure. 4. A means for forming a film on a substrate, a means for providing a temperature difference between a gas supply system and a processing substrate, for adsorbing the supplied resist monomer in a gaseous state on the substrate, and causing a polymerization reaction in the resist monomer. A pattern forming apparatus comprising: a means for exposing, an exposing means, a developing means, an etching means, and a means for removing a mask, and these are continuously performed under a reduced pressure condition. 5. The pattern forming apparatus according to claim 4, wherein the means for causing the resist monomer to undergo a polymerization reaction is ultraviolet irradiation and the exposing means is an electron beam. 6. Means for forming a film on a substrate, means for forming a film on a substrate by providing a temperature difference between a gas supply system and a processing substrate and supplying an organic material which causes a polymerization reaction by an energy beam in a gas state. A means for causing a polymerization reaction by an energy beam, a means for adsorbing a resist monomer supplied in a gas state on a substrate, a means for causing a polymerization reaction on the resist monomer, an exposing means, a developing means, an etching means,
A pattern forming apparatus having means for removing a mask, which are continuously performed under a reduced pressure condition. 7. An energy beam for causing a polymerization reaction in an organic material is ultraviolet light, a means for causing a polymerization reaction in a resist monomer is ultraviolet irradiation, and an exposing means is an electron beam. The pattern forming apparatus according to claim 4. 8. A gas supply system and a substrate are provided with a temperature difference, and two or more kinds of materials that cause a chemical change including polymerization due to energy beams having different energy levels are gasified and supplied.
A method for forming a mask, which comprises forming a film on a substrate having a temperature difference, causing a polymerization reaction by a first energy beam, and forming a mask by a second energy beam. 9. The mask forming method according to claim 8, wherein the energy level of the first energy beam is lower than the energy level of the second energy beam. 10. The mask forming method according to claim 8, wherein the chemical change by the second energy beam is a decomposition reaction. 11. The mask forming method according to claim 8, wherein the chemical change by the second energy beam is a crosslinking reaction. 12. The mask forming method according to claim 8, wherein the chemical change due to the second energy beam is a crosslinking reaction, and the mask is formed by dry etching. 13. A pattern forming method, characterized in that film formation, mask fabrication according to claim 8, etching, and mask removal are continuously performed under reduced pressure conditions. 14. A gas supply system and a substrate are provided with a temperature difference, a material that causes a polymerization reaction by an energy beam is supplied in a gas state, a film is formed on the substrate with a temperature difference provided, and the material is polymerized by irradiation with an energy beam. A reaction is caused to occur, and two or more kinds of chemical changes including polymerization due to energy beams having different energy levels are gasified and supplied.
A mask forming method, comprising forming a film on a substrate having a temperature difference, causing a polymerization reaction by a first energy beam, and forming a mask by a second energy beam. 15. A temperature difference is provided between the gas supply system and the substrate, a material that causes a polymerization reaction by an energy beam is supplied in a gas state, a film is formed on the substrate provided with the temperature difference, and the surface of the formed film is removed. A flattening process is performed, a polymerization reaction is caused by irradiation with an energy beam, and two or more kinds of chemical changes including polymerization due to energy beams having different energy levels are supplied in a gas state, and a temperature difference is supplied. A method for forming a mask, which comprises forming a film on a substrate provided with a film, causing a polymerization reaction by the first energy beam, and forming a mask by the second energy beam. 16. By providing a temperature difference between the gas supply system and the substrate to be processed, the gas changes into a solid substance film on the basis of this temperature difference, and the substance is altered by irradiation with an energy beam to a substance having a high vapor pressure. Supplying a changing gas substance onto the substrate to be processed, cooling the substrate to be processed to form a film on which the gas substance is solidified, and applying a predetermined energy beam to the film. Forming a mask pattern in which the gas substance is solidified by irradiating the pattern of FIG. 2 and changing the film in the irradiated region to a substance having a high vapor pressure and selectively removing it outside the processing system. Method. 17. The mask forming method according to claim 16, wherein in each of the steps of forming the mask, the substrate to be processed is cooled and maintained at a temperature at least below a temperature at which the gas substance is frozen. 18. The mask forming method according to claim 16, wherein the energy beam is composed of an electron beam or light. 19. The gas supply system is decomposed into an oxidizing substance or a reducing substance upon irradiation with an energy beam, and changes from a gas to a solid substance film on the basis of a temperature difference between the gas supply system and the substrate to be processed. 17. The mask forming method according to claim 16, which is a mixture of a first gas substance and a second gas substance that changes into a substance having a high vapor pressure by an oxidation or reduction action of a decomposition product of the first gas substance. 20. The mask forming method according to claim 19, wherein the first gas substance is at least one of xenon difluoride gas and bromine fluoride gas, and the second gas substance is organic silane gas. 21. A film forming step of forming a predetermined film on a predetermined substrate, a step of forming a mask pattern on the film formed by the film forming step, and a mask formed by the mask pattern forming step. 20. The mask forming method according to claim 16, wherein the mask pattern forming step comprises a step of selectively removing the film by etching using a mask and a step of removing the mask. A pattern forming method comprising: 22. The method comprises the film forming step, a mask pattern forming step, a step of selectively etching and removing a film using a mask formed by the mask pattern forming step, and a step of removing the mask. 22. The pattern forming method according to claim 21, wherein the series of steps is performed continuously without breaking the vacuum system. 23. A semiconductor substrate incorporating a semiconductor element is used as the substrate, and the film forming step is a step of forming one or both of an insulating film and a conductor film to form a multilayer on the semiconductor substrate. 23. The pattern forming method according to claim 21, wherein a wiring structure is formed. 24. The substrate is a transparent insulating substrate, and the film forming step is a step of forming at least a gate electrode forming conductor film, a gate insulating film, a semiconductor film, a source drain and a pixel electrode forming conductor film. 23. The pattern forming method according to claim 21, wherein a liquid crystal display active matrix is formed on the transparent insulating substrate. 25. A means for providing a temperature difference between a gas supply system and a substrate to be processed, and a gas is converted into a solid substance film on the basis of the temperature difference, and the substance is changed by irradiation with an energy beam to have a high vapor pressure. A means for supplying a changing gas substance onto the substrate to be processed, a means for cooling the substrate to be processed to form a film on which the gas substance is solidified, and a predetermined energy beam for this film. Pattern is exposed to light, the film in the irradiated region is changed to a substance with a high vapor pressure and selectively removed outside the processing system, and a solidified film of the gas substance remaining in the unirradiated region is formed as a mask pattern. And a mask forming apparatus. 26. The mask forming apparatus according to claim 25, further comprising means for holding the substrate to be processed on a sample table that is cooled and held at a temperature below a temperature at which a gas substance is frozen at least. . 27. The mask forming apparatus according to claim 25, wherein the energy beam is composed of an electron beam or light. 28. A film forming means for forming a predetermined film on a predetermined substrate, a means for forming a mask pattern on the film formed by the film forming means, and a mask formed by the mask pattern forming means. 28. A mask forming apparatus according to claim 25, wherein the mask pattern forming means comprises a means for selectively etching and removing the film by using a mask and a means for removing the mask. A pattern forming apparatus configured by. 29. The pattern forming apparatus according to claim 28, further comprising means for heating the substrate to a temperature above the freezing temperature of the mask, as means for removing the mask. 30. A film forming means, a mask pattern forming means, a means for selectively etching and removing a film using a mask formed by the mask pattern forming means, and a means for removing the mask. 30. The pattern forming apparatus according to claim 28 or 29, further comprising means for continuously performing the series of means described above through a common transfer chamber without breaking the vacuum system. 31. A plurality of film forming chambers are provided as the film forming means, one of which is a film forming chamber by sputtering and the other is C.
31. The pattern forming apparatus according to claim 28, which is a VD film forming chamber. 32. The pattern forming apparatus according to claim 28, wherein a means for selectively removing the film by etching comprises a plasma etching chamber or an etching chamber by introducing an etching gas. 33. A gas adsorption exposure chamber is provided as a means for forming the mask pattern, and the gas adsorption exposure chamber is provided with a gas supply port and a cooling means for freezing the supplied gas as a solid substance film on the substrate. 33. The pattern forming apparatus according to claim 28, further comprising: a sample table, means for irradiating and exposing the film with an energy beam in a predetermined pattern, and an exhaust system.