JPS5952526A - Method for sputtering metal oxide film - Google Patents
Method for sputtering metal oxide filmInfo
- Publication number
- JPS5952526A JPS5952526A JP15841482A JP15841482A JPS5952526A JP S5952526 A JPS5952526 A JP S5952526A JP 15841482 A JP15841482 A JP 15841482A JP 15841482 A JP15841482 A JP 15841482A JP S5952526 A JPS5952526 A JP S5952526A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- oxide film
- oxygen
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は金属酸化膜を被着する反応性スパッタリング方
法の改善に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to improvements in reactive sputtering methods for depositing metal oxide films.
(′b)従来技術と問題点
周知のようにスパッタリング方法(以下、スパッタ法と
称する)は、電子部品の薄膜形成に良く利用されており
、半導体装置の製造や抵抗体の製作に欠くことのできな
い技術となっている。('b) Prior Art and Problems As is well known, the sputtering method (hereinafter referred to as sputtering method) is often used to form thin films for electronic components, and is essential in the manufacture of semiconductor devices and resistors. It is a technology that cannot be used.
例えば、半導体製造の際に用いられるフォトマスクは透
明力°う7基板上にクロム(Or)などの金属や酸化ク
ロム(Cr2O2)などの金属酸化物の薄膜をバターニ
ングして形成するが、この薄膜の被着にはスパッタ法が
使用される。その簿膜被着時に、ターゲットが叩かれて
プラズマイオンと化学反応を起し、その反応生成膜を被
着するスパッタ法は反応性スパッタ法と呼ばれておシ、
上記の酸化クロムを被着させる場合、あるいは酸化シリ
コンや窒化シリコンを被着させる場合がこれに当たる。For example, photomasks used in semiconductor manufacturing are formed by patterning a thin film of a metal such as chromium (Or) or a metal oxide such as chromium oxide (Cr2O2) on a transparent substrate. Sputtering is used to deposit the thin film. The sputtering method in which the target is hit and causes a chemical reaction with plasma ions during film deposition, and the reaction product film is deposited is called reactive sputtering.
This applies when depositing the above-mentioned chromium oxide, or when depositing silicon oxide or silicon nitride.
このような反応性スパッタ法において、酸素(02)ガ
スをプラズマ化し、酸素イオンをターゲットに衝突させ
て、酸化膜を被着させる場合に初期にはプラズマが発生
、し難くて、強制的に高電圧を印加し、無理にプラズマ
を発生させる方法が採られている。例えば、第1図にそ
の概要断面図を示す直流(DC)電源型ヌパツタ装置に
より酸化クロム膜を被着させる場合がこれに相当する。In this type of reactive sputtering method, when oxygen (02) gas is turned into plasma and oxygen ions are collided with the target to deposit an oxide film, plasma is generated in the initial stage, but it is difficult to generate a plasma, and a high temperature is forced. A method is used to forcefully generate plasma by applying a voltage. For example, this corresponds to the case where a chromium oxide film is deposited using a direct current (DC) power type nupatsuta device, a schematic cross-sectional view of which is shown in FIG.
図において、lはターゲットの金属クロム板、2は被着
月のガラス基板であるが、ヌバッタ容器3内を排気口4
よシ排気し、真空度がI O”Torrとなるようにガ
ス流入口5よシ酸素ガスを流入させる。In the figure, l is the metal chrome plate of the target, 2 is the glass substrate of the deposited moon, and the exhaust port 4 is inside the Nubatta container 3.
The chamber is thoroughly evacuated, and oxygen gas is introduced through the gas inlet 5 so that the degree of vacuum becomes IO'' Torr.
そうして最初にDC電圧をeoov以上と高くしておい
てプラズマを発生させ、発生が始咬ると共に約500V
の電圧に低下させて、スパッタをおこなっている。First, the DC voltage is raised to eoov or higher to generate plasma, and as the generation begins, the voltage increases to about 500V.
Sputtering is performed by lowering the voltage to .
このようにして、膜厚200〜300人の酸化クロム膜
を被着させた後、その表面を検査すると、径lμel1
前後のピット(ピンホー)v)が無数に発生しておシ、
極めて荒れた膜質の薄膜となっている。In this way, after depositing a chromium oxide film with a thickness of 200 to 300 people, when the surface was inspected, the diameter lμel1
Numerous pits (pinholes) occur in the front and rear,
It is a thin film with extremely rough texture.
これはターゲット表面が空気に曝されて表面に不導体膜
が生じておシ、したがって最初にその不導体膜を破壊す
る必要があって、そのため高電圧を印加し、それに伴な
う異常放電によってピンホールが発生すると考えられる
。This is because the target surface is exposed to air and a non-conducting film is formed on the surface, so it is necessary to destroy the non-conducting film first, and to do so, a high voltage is applied and the resulting abnormal discharge causes It is thought that pinholes occur.
しかしながら、このようなピンホールを生じた薄膜は、
決して好ましいものではなく、今後の電子技術の進歩に
よって数100人程度のりすい膜が益々多くなると予想
され、是非ピンホールのない膜質に改善する必要がある
。However, the thin film with such pinholes is
This is by no means desirable, and as electronic technology advances in the future, it is expected that the number of people with scratchy membranes will increase by several hundred, so it is necessary to improve the quality of the membrane to be pinhole-free.
(C)発明の目的
本発明はこのようなピンホールの発生のない金属酸化膜
を反応性スパッタ法によって形成する方法を提案するも
のである。(C) Object of the Invention The present invention proposes a method of forming a metal oxide film free from such pinholes by reactive sputtering.
働 発明の構成
かかる目的は、金属酸化膜を形成する反応性スパッタ法
において、最初にアルゴン(Ar)ガスを酸素ガスに混
入し、低電圧にてプラズマを発生させ、次いで酸素ガス
のみを流入して所期の電圧にてプラズマを発生させるス
パッタ法によって達成することができる。Structure of the Invention The object of the present invention is to first mix argon (Ar) gas into oxygen gas, generate plasma at a low voltage, and then introduce only oxygen gas in the reactive sputtering method for forming a metal oxide film. This can be achieved by a sputtering method in which plasma is generated at a desired voltage.
(e) 発明の実施例
以下、実施例によって詳細に説明する。上記第1図に示
したスパッタ装置を用いて、排気口4よシ真空に吸引し
た後、ガス流入口4よシ第2図に示す図表のようにアル
ゴンガスと酸素ガスを流入する。即ちアルゴンガスは2
ntll 7分、酸素ガスは12m61分を流入させて
、850VのDC1fi圧を印加すると、僅か1秒でプ
ラズマが発生する。数秒・間、流入ガスをそのままとし
て除々にDC電圧を高くし、500■のD’C電圧に印
加すると共にアルゴンガスの流入を中止する。しかる後
に、酸素ガス12Ll/分、DC電圧500■のままと
してスパッタさせると30〜35秒で膜厚200人の酸
化クロム膜をガラス基板z上に形成することができる。(e) Examples of the invention Hereinafter, the invention will be explained in detail using examples. Using the sputtering apparatus shown in FIG. 1, a vacuum is drawn through the exhaust port 4, and then argon gas and oxygen gas are introduced through the gas inlet 4 as shown in the chart shown in FIG. That is, argon gas is 2
ntll 7 minutes, oxygen gas flows for 12 m61 minutes, and when a DC 1fi pressure of 850 V is applied, plasma is generated in just 1 second. The DC voltage was gradually increased while the inflow gas was left as it was for several seconds, and at the same time a D'C voltage of 500 cm was applied, the inflow of argon gas was stopped. Thereafter, sputtering is carried out with the oxygen gas at 12 Ll/min and the DC voltage at 500 mm, and a chromium oxide film with a thickness of 200 mm can be formed on the glass substrate z in 30 to 35 seconds.
その間の真空度は絶えず1O−3Torrに維持する。During this time, the degree of vacuum is constantly maintained at 1O-3 Torr.
このようにして被着した酸化クロム膜を検出したところ
、ピンホールの発生は全黙認められない酸化クロム薄膜
がえら□れた。これは初期のプラズマ発生時に異常放電
が生じなかったことを意味する。When the chromium oxide film deposited in this manner was detected, a thin chromium oxide film was found in which no pinholes were observed. This means that no abnormal discharge occurred during initial plasma generation.
上記は一実施例であるが、金属酸化膜を反応性スパッタ
法にて被着する場合に、流入ガスが酸素ガスのみでなく
、他のガス例えば窒素ガスを僅かに酸素ガスに混入させ
る場合にも、同様にしてアルゴンガスを初期に混入させ
ることによって、同じく低電圧でプラズマを発生させる
ことができて同様にソフトなプラズマ発生法となる。The above is just one example, but when depositing a metal oxide film by reactive sputtering, the inflowing gas is not only oxygen gas, but also other gases such as nitrogen gas mixed into the oxygen gas. Similarly, by initially mixing argon gas, plasma can be generated at a low voltage, resulting in a similarly soft plasma generation method.
(ト)発明の効果
したがって、本発明によれば非常に薄い金属酸化膜例え
ば300人程度の薄膜を極めて品質良く形成することが
できるため、電子部品の性能向上に寄与するものである
。(g) Effects of the Invention Accordingly, according to the present invention, a very thin metal oxide film, for example, a thin film of about 300 layers, can be formed with extremely high quality, which contributes to improving the performance of electronic components.
尚、上記実施例は酸化クロム薄膜で説明したが、その他
の金属薄膜のスパッタ法にも適用できることは勿論であ
る。Although the above embodiment has been explained using a chromium oxide thin film, it is of course applicable to sputtering methods for other metal thin films.
第1図はスパッタリング装置の概要断面図、第2・図は
本発明にかかるヌバッタリング方法の時間図表である。
図中1はターゲット(金属クロム)、2はガラス基板、
8は真空容器、4は排気口、5はガス流入口を示す。FIG. 1 is a schematic cross-sectional view of a sputtering apparatus, and FIG. 2 is a time chart of the Nubatta ring method according to the present invention. In the figure, 1 is the target (metallic chromium), 2 is the glass substrate,
8 is a vacuum container, 4 is an exhaust port, and 5 is a gas inlet.
Claims (1)
ットに衝突させ、該ターゲット材料の金属からなる酸化
膜を形成する反応性スパッタリング方法において、最初
にアルゴンガヌを酸素ガスに混入し、低電圧にてプラズ
マを発生させ、次いで酸素ガスのみを流入して、所期の
電圧にて酸素ブー ラズマを発生させる工程が含まれ
てなることを特徴とする金属p化膜のスパッタリング方
法。In the reactive sputtering method, in which oxygen gas is introduced, oxygen plasma is generated, and the plasma collides with the target to form an oxide film made of the metal of the target material. Argon gas is first mixed into the oxygen gas, and then the plasma is sputtered at a low voltage. 1. A method for sputtering a metal p-oxide film, comprising the steps of generating plasma, then introducing only oxygen gas, and generating an oxygen beam plasma at a desired voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15841482A JPS6022971B2 (en) | 1982-09-10 | 1982-09-10 | Sputtering method for metal oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15841482A JPS6022971B2 (en) | 1982-09-10 | 1982-09-10 | Sputtering method for metal oxide film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5952526A true JPS5952526A (en) | 1984-03-27 |
JPS6022971B2 JPS6022971B2 (en) | 1985-06-05 |
Family
ID=15671230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15841482A Expired JPS6022971B2 (en) | 1982-09-10 | 1982-09-10 | Sputtering method for metal oxide film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6022971B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6283462A (en) * | 1985-10-09 | 1987-04-16 | Matsushita Electric Ind Co Ltd | Production of thin orientable metallic film |
WO2001082347A1 (en) * | 2000-04-21 | 2001-11-01 | Toyoda Gosei Co., Ltd. | Method of manufacturing group-iii nitride compound semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS619069U (en) * | 1984-06-22 | 1986-01-20 | 大門ランド株式会社 | fork |
-
1982
- 1982-09-10 JP JP15841482A patent/JPS6022971B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6283462A (en) * | 1985-10-09 | 1987-04-16 | Matsushita Electric Ind Co Ltd | Production of thin orientable metallic film |
JPH0723534B2 (en) * | 1985-10-09 | 1995-03-15 | 松下電器産業株式会社 | Method for producing oriented metal thin film |
WO2001082347A1 (en) * | 2000-04-21 | 2001-11-01 | Toyoda Gosei Co., Ltd. | Method of manufacturing group-iii nitride compound semiconductor device |
US6830949B2 (en) | 2000-04-21 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for producing group-III nitride compound semiconductor device |
KR100504161B1 (en) * | 2000-04-21 | 2005-07-28 | 도요다 고세이 가부시키가이샤 | Method of manufacturing group-ⅲ nitride compound semiconcuctor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6022971B2 (en) | 1985-06-05 |
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