JPS63152120A - Thin film formation - Google Patents
Thin film formationInfo
- Publication number
- JPS63152120A JPS63152120A JP30078686A JP30078686A JPS63152120A JP S63152120 A JPS63152120 A JP S63152120A JP 30078686 A JP30078686 A JP 30078686A JP 30078686 A JP30078686 A JP 30078686A JP S63152120 A JPS63152120 A JP S63152120A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- deposited
- gas
- electron beam
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000010894 electron beam technology Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000470 constituent Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 abstract description 13
- 230000008021 deposition Effects 0.000 abstract description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010386 TiI4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910015221 MoCl5 Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- 229910003091 WCl6 Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- UXVOMHPBSSIGNQ-UHFFFAOYSA-I tungsten(v) bromide Chemical compound Br[W](Br)(Br)(Br)Br UXVOMHPBSSIGNQ-UHFFFAOYSA-I 0.000 description 1
- WIDQNNDDTXUPAN-UHFFFAOYSA-I tungsten(v) chloride Chemical compound Cl[W](Cl)(Cl)(Cl)Cl WIDQNNDDTXUPAN-UHFFFAOYSA-I 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、基板上に薄膜を形成する方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of forming a thin film on a substrate.
（従来の技術）
従来、基板上にパターンを形成する場合、第３図および
第４図で示されている工程が行なわれている。第３図（
１）、（２）、（３）、（４）、（５）では、基板３１
上にパターン形成材料３２を蒸着やスパッタ法により形
成する（（１）図）。さらにレジスト３３を塗布しく（
２）図）、次に光露光や電子ビーム露光によりレジスト
３３のパターニングをする（（３）図）。そして、レジ
ストパターン３３をマスクとしてケミカルエツチングま
たは、ドライエツチングによりパターン形成材料３２ヘ
パターントランスフアーを行なう（（４）図）。そして
、レジスト３３を剥離する（（５）図）。第４図（１）
、（２＞、（３）、（４）ではリフトオフ法を用いる場
合の工程を示している。(Prior Art) Conventionally, when forming a pattern on a substrate, the steps shown in FIGS. 3 and 4 are performed. Figure 3 (
1), (2), (3), (4), and (5), the substrate 31
A pattern forming material 32 is formed thereon by vapor deposition or sputtering (Figure (1)). Furthermore, apply resist 33 (
(2) Figure) Next, the resist 33 is patterned by light exposure or electron beam exposure (Figure (3)). Then, pattern transfer to the pattern forming material 32 is performed by chemical etching or dry etching using the resist pattern 33 as a mask (FIG. (4)). Then, the resist 33 is peeled off (Figure (5)). Figure 4 (1)
, (2>, (3), and (4)) show steps when using the lift-off method.
基板４１上にレジスト４２を塗布しく（１）図）、次に
光露光や電子ビーム露光によりレジスト４２のパターニ
ングをする（（２）図）。次にパターン材料４３を蒸着
しく（３）図）、レジスト４２を剥離することにより、
基板４１上にパターン材料４３をパターニング成できる
（（４）図）。A resist 42 is applied onto the substrate 41 (Fig. (1)), and then the resist 42 is patterned by light exposure or electron beam exposure (Fig. (2)). Next, a pattern material 43 is deposited (Figure 3) and the resist 42 is peeled off.
A pattern material 43 can be patterned on the substrate 41 (Figure (4)).
（発明が解決しようとする問題点）
この従来の方法では基板上にバタン材料を形成するのに
工程がきわめて長いという欠点を有していた。(Problems to be Solved by the Invention) This conventional method has the disadvantage that the process for forming the batten material on the substrate is extremely long.
本発明の目的は、レジスト等のマスクを必要とせず、高
積度、高純度の薄膜を形成することのできる、電子ビー
ムを用いた薄膜形成方法を提供することである。An object of the present invention is to provide a thin film forming method using an electron beam that can form a thin film with a high density and high purity without requiring a mask such as a resist.
（問題点を解決するための手段）
本発明によれば、少なくとも堆積させるべき材料を構成
元素として含んだガスを放電によりラジカル化し、被堆
積基板上に流し、基板の所望の部分に電子ビームを照射
して前記材料を基板上に堆積させることを特徴とする薄
膜形成方法が得られる。(Means for Solving the Problems) According to the present invention, a gas containing at least the material to be deposited as a constituent element is converted into radicals by electric discharge, is flowed onto the substrate to be deposited, and an electron beam is applied to a desired portion of the substrate. A method for forming a thin film is obtained, characterized in that the material is deposited on a substrate by irradiation.
（作用） 次に、本発明の原理について第１図を用いて説明する。(effect) Next, the principle of the present invention will be explained using FIG.
デポジションさせるべき材料を含んだラジカル化したガ
ス分子１３の雰囲気中に被デポジション基板１１を設置
すると、ラジカル化したガス分子１３が被デポジション
基板１１の表面上に吸着する。When the deposition target substrate 11 is placed in an atmosphere of radicalized gas molecules 13 containing the material to be deposited, the radicalized gas molecules 13 are adsorbed onto the surface of the deposition target substrate 11.
１２がその吸着ガス分子を示している。ガス分子１３の
吸着率はラジカル化することにより大幅に増大する。電
子ビーム１６を基板１１上に照射すると、照射された部
分の吸着分子１２が電子ビーム１６のエネルギーにより
吸着分子１２に含まれるデポジション材料１４と揮発性
材料１５に分解し、デポジション材料１４は基板表面に
析出する。12 indicates the adsorbed gas molecules. The adsorption rate of gas molecules 13 is significantly increased by radicalization. When the electron beam 16 is irradiated onto the substrate 11, the adsorbed molecules 12 in the irradiated portion are decomposed into deposition material 14 and volatile material 15 contained in the adsorbed molecules 12 due to the energy of the electron beam 16, and the deposition material 14 is Precipitates on the substrate surface.
一方、揮発性材料１５は排出される。以上の様な原理に
より被デポジション基板１１表面上電子ビーム照射によ
り、直接、雰囲気ガス中に含まれるデポジション材を析
出させパターニングする。Meanwhile, volatile material 15 is discharged. Based on the principle described above, the deposition material contained in the atmospheric gas is directly deposited and patterned by electron beam irradiation onto the surface of the deposition target substrate 11.
（実施例）
以下、本発明の実施例について図面を参照して説明する
。第２図は本実施例では用いる装置の構成図である。本
装置は電子ビーム照射系２０８、試料室２０３、マイク
ロ波放電室２０２、ガス材料室２０１とから構成されて
いる。本実施例においては、シリコン（Ｓｉ）を構成元
素として含むシラン（ＳｉＨ４）を雰囲気ガスとして用
い、集束された電子ビーム照射によりＧｅ基板上にＳｉ
をデポジションさせた。５ｉＨ４４０２を雰囲気ガス材
料収納室２０１に入れ、ＳｉをデポジションさせるＧｅ
基板２０５を試料台２０４にセットする。電子ビーム照
射系２０８と試料室２０３を１Ｏ−５Ｔｏｒｒ程度以上
の高真空に排気する。ＳｉＨ４をガス材料室２０１から
マイクロ液放電室２０２へ導入し、マイクロ波放電室内
でラジカル化し、そのラジカルを試料室２０３へ導入す
る。電子ビーム２１０をＧｅ基板２０５の所望の部分に
照射することによりＧｅ基板２０５表面上に吸着された
ＳｉＨ４を分解する。Ｇｅ基板２０５は加熱せず室温の
ままでよい。その分解の結果、ＳｉとＮ２に分かれる。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings. FIG. 2 is a block diagram of the apparatus used in this embodiment. This apparatus is composed of an electron beam irradiation system 208, a sample chamber 203, a microwave discharge chamber 202, and a gas material chamber 201. In this example, silane (SiH4) containing silicon (Si) as a constituent element is used as an atmospheric gas, and Si is deposited on the Ge substrate by focused electron beam irradiation.
was deposited. 5iH4402 is placed in the atmospheric gas material storage chamber 201, and Ge is deposited to deposit Si.
The substrate 205 is set on the sample stage 204. The electron beam irradiation system 208 and the sample chamber 203 are evacuated to a high vacuum of approximately 10-5 Torr or higher. SiH4 is introduced from the gas material chamber 201 into the micro-liquid discharge chamber 202, converted into radicals in the microwave discharge chamber, and the radicals are introduced into the sample chamber 203. By irradiating a desired portion of the Ge substrate 205 with an electron beam 210, SiH4 adsorbed on the surface of the Ge substrate 205 is decomposed. The Ge substrate 205 may be left at room temperature without being heated. As a result of its decomposition, it separates into Si and N2.
ＳｉはＧｅ基板２０５上に析出する。一方Ｈ２は揮発性
ガスであるので排出される。この様にして、ＳｉがＧｅ
基板２０５表面の所望の部分にデポジションされる。Si is deposited on the Ge substrate 205. On the other hand, H2 is a volatile gas and is therefore exhausted. In this way, Si becomes Ge
It is deposited onto a desired portion of the surface of the substrate 205.
本実施例では、デポジション材料としてＳｉを含むＳｉ
Ｈ４を雰囲気ガスとして用いたが、５ｉＨ２Ｃ１２゜５
ｉＨ３Ｃ１，Ｓｉ２Ｈ６を用いても良いし、構成元素と
してＭｏを含むＭＯ（Ｃ６Ｈ６）２、構成元素としてＡ
ｔを含むＡｌ（ＣＨ３）３、構成元素としてＣｒを含む
Ｃｒ（Ｃ６Ｈ６）２等の有機金属化合物に対しても同様
の効果を示す。In this example, Si containing Si is used as the deposition material.
Although H4 was used as the atmospheric gas, 5iH2C12°5
iH3C1, Si2H6 may be used, MO(C6H6)2 containing Mo as a constituent element, A as a constituent element.
A similar effect is shown for organometallic compounds such as Al(CH3)3 containing t and Cr(C6H6)2 containing Cr as a constituent element.
ＭＯ（Ｃ６Ｈ６）２を用いるとＭｏが堆積され、ＡＩ（
ＣＨａ）ａを用いるとＡＩが堆積される。When MO(C6H6)2 is used, Mo is deposited and AI(
With CHa)a, AI is deposited.
その他にも原料としてＷＣｌ６．ＷＣｌ５．ＷＢｒ５等
を用いればＷが堆積できる。またＭｏＣｌ５．ＭｏＢｒ
３等を用いれば、Ｍｏを堆積できる。同様にしてＴａＣ
ｌ５．ＴａＢｒ３等でＴａ、ＴｉＩ４等でＴｉ、ＺｒＩ
４等でＺｒが堆積できる。以上述べたＡＩ、Ｍｏ、Ｗ、
Ｔｉ等はＩＣ，ＬＳＩにおいて配線、ゲート電極等に用
いることができる。In addition, WCl6. WCl5. W can be deposited by using WBr5 or the like. Also MoCl5. MoBr
3 or the like, Mo can be deposited. Similarly, TaC
l5. TaBr3 etc. for Ta, TiI4 etc. for Ti, ZrI
Zr can be deposited at magnitude 4. The above-mentioned AI, Mo, W,
Ti and the like can be used for wiring, gate electrodes, etc. in ICs and LSIs.
また本発明の方法で堆積できる薄膜材料は何も半導体や
金属に限るわではない。例えば原料としてＢＣｌ３やＢ
Ｂｒ３を用いればＢｐｐｏｃｔ３を用いればＰを堆積で
き、また基板中にこのＢやＰをドープできる。Furthermore, the thin film materials that can be deposited by the method of the present invention are not limited to semiconductors or metals. For example, BCl3 and B as raw materials
If Br3 is used, P can be deposited if Bppoct3 is used, and B or P can be doped into the substrate.
更に基板上での流量比や圧力を調整すればＢやＰがドー
プされたＳｉ膜を基板上に形成できる。また前記のよう
にＢやＰを堆積あるいはドープできるから、ＳｉやＧａ
Ａｓ等の半導体基板表面にｐｎ接合を形成することがで
きる。Further, by adjusting the flow rate ratio and pressure on the substrate, a Si film doped with B or P can be formed on the substrate. Also, as mentioned above, since B and P can be deposited or doped, Si and Ga can be deposited or doped.
A pn junction can be formed on the surface of a semiconductor substrate such as As.
またＴｉＣｌ４ガスと、Ｎ２ガスを同時に基板表面上に
流して電子ビームを照射することによってＴｉＮを堆積
できる。ＴｉＩ４．Ｎ２．Ｔｉ［Ｎ（Ｃ２Ｈ５）２］４
でもＴｉＮを形成できる。またＳｉ（ＯＣ２Ｈ５）４を
用いればＳｉＯ２゜Ｔａ（ＯＣ２Ｈ５）５を用いればＴ
ａ２Ｏ５が形成できる。また前記ＢＣｌ３．ＢＢｒ３と
前記金属形成材料とを同時に用いるとポライド膜を形成
できる。Furthermore, TiN can be deposited by simultaneously flowing TiCl4 gas and N2 gas onto the substrate surface and irradiating it with an electron beam. TiI4. N2. Ti[N(C2H5)2]4
However, TiN can be formed. Also, if Si(OC2H5)4 is used, SiO2° If Ta(OC2H5)5 is used, T
a2O5 can be formed. In addition, the BCl3. A poride film can be formed by using BBr3 and the metal forming material at the same time.
また前記実施例ではマイクロ波放電を用いたが、直流放
゛電やＲＦ放電も用いることができる。なお弄命のｒ豆
いラジカルを用いるときには放電室を試料室内に設置す
る等の手段で放電部分と基板を接近させるとよい。Furthermore, although microwave discharge was used in the above embodiments, direct current discharge or RF discharge may also be used. In addition, when using dangerous radicals, it is preferable to bring the discharge portion and the substrate close to each other by placing the discharge chamber inside the sample chamber or the like.
（発明の効果）
本発明は、以上説明した様に、堆積させるべき材料を構
成元素として含んだガスをマイクロ波放電等によりラジ
カル化し、被堆積基板上に流し、基板上に電子ビームを
照射することより、デポジション材料を析出させること
ができ、従来の方法に比べて工程がきわめて簡単である
。(Effects of the Invention) As explained above, the present invention radicalizes a gas containing the material to be deposited as a constituent element by microwave discharge or the like, flows it onto a substrate to be deposited, and irradiates the substrate with an electron beam. In particular, the deposition material can be precipitated, and the process is extremely simple compared to conventional methods.
なお、前記実施例では集束された電子ビームを用いたが
、集束されていない電子ビームを用いても良い。Note that although a focused electron beam was used in the above embodiment, an unfocused electron beam may also be used.
以上の説明では、本発明を、微細な薄膜パターンを形成
する方法、あるいは単に薄膜を形成する方法として述べ
たが、本発明は原料から基板上へいきなり高純度に精製
された膜を堆積する方法としてとらえてもよい。即ち本
発明によれば、それほど高純度でない原料からでも高純
度な膜を堆積できる。つまり原料の精製と膜の堆積とが
同時に進行するわけである。In the above explanation, the present invention has been described as a method of forming a fine thin film pattern or simply a method of forming a thin film, but the present invention is a method of suddenly depositing a highly purified film from a raw material onto a substrate. It may be taken as That is, according to the present invention, a highly pure film can be deposited even from raw materials that are not very pure. In other words, the purification of the raw material and the deposition of the film proceed simultaneously.
第１図は本発明の原理と作用を説明する模式図である。
第２図は本発明の実施例で用いる装置の溝成図である。
第３図（１）、（２）、（３）、（４）、（５）および
第４図（１）、（２）。
（３）、（４）は基板上にパターンを形成する従来の方
法を説明するための図で、主要工程における基板の断面
を順次示した模式的断面図である。
図において
１１．３１，４１，２０５・・・基板、１２・・・吸着
ガス分子、３３．４２・・・レジスト、１３・・・ラジ
カル化したガス分子、１４１０．デポジション材料、１
５・・・揮発性材料、１６，２１０・・・電子ビーム、
２０１・・・ガス材料室、２０２・・・マイクロ波放電
室。
第１図
電子ビーム
被デポジション基板
第３図
第４図FIG. 1 is a schematic diagram illustrating the principle and operation of the present invention. FIG. 2 is a groove diagram of a device used in an embodiment of the present invention. Figure 3 (1), (2), (3), (4), (5) and Figure 4 (1), (2). (3) and (4) are diagrams for explaining a conventional method of forming a pattern on a substrate, and are schematic sectional views sequentially showing cross sections of the substrate in main steps. In the figure, 11.31, 41, 205...substrate, 12...adsorbed gas molecules, 33.42...resist, 13...radicalized gas molecules, 1410. Deposition material, 1
5... Volatile material, 16,210... Electron beam,
201... Gas material chamber, 202... Microwave discharge chamber. Figure 1 Electron beam deposition substrate Figure 3 Figure 4
Claims (1)
だガスを放電によりラジカル化し、被堆積基板上に流し
、基板の所望の部分に電子ビームを照射して前記材料を
基板上に堆積させることを特徴とする薄膜形成方法。The method is characterized in that a gas containing at least the material to be deposited as a constituent element is radicalized by electric discharge, is flowed onto the substrate to be deposited, and a desired portion of the substrate is irradiated with an electron beam to deposit the material on the substrate. Thin film formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61300786A JPH0658889B2 (en) | 1986-12-16 | 1986-12-16 | Thin film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61300786A JPH0658889B2 (en) | 1986-12-16 | 1986-12-16 | Thin film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63152120A true JPS63152120A (en) | 1988-06-24 |
| JPH0658889B2 JPH0658889B2 (en) | 1994-08-03 |
Family
ID=17889077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61300786A Expired - Lifetime JPH0658889B2 (en) | 1986-12-16 | 1986-12-16 | Thin film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0658889B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03107464A (en) * | 1989-08-31 | 1991-05-07 | American Teleph & Telegr Co <Att> | Method and device for accumulating dielectric film |
| JPH04116172A (en) * | 1990-08-31 | 1992-04-16 | Energy Conversion Devices Inc | Method of directly building up active species on distantly placed substrate |
| US5147823A (en) * | 1988-09-20 | 1992-09-15 | Sony Corporation | Method for forming an ultrafine metal pattern using an electron beam |
| US7258901B1 (en) * | 2000-09-08 | 2007-08-21 | Fei Company | Directed growth of nanotubes on a catalyst |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167316A (en) * | 1984-02-09 | 1985-08-30 | Fujitsu Ltd | Formation of film |
-
1986
- 1986-12-16 JP JP61300786A patent/JPH0658889B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167316A (en) * | 1984-02-09 | 1985-08-30 | Fujitsu Ltd | Formation of film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5147823A (en) * | 1988-09-20 | 1992-09-15 | Sony Corporation | Method for forming an ultrafine metal pattern using an electron beam |
| JPH03107464A (en) * | 1989-08-31 | 1991-05-07 | American Teleph & Telegr Co <Att> | Method and device for accumulating dielectric film |
| JPH04116172A (en) * | 1990-08-31 | 1992-04-16 | Energy Conversion Devices Inc | Method of directly building up active species on distantly placed substrate |
| US7258901B1 (en) * | 2000-09-08 | 2007-08-21 | Fei Company | Directed growth of nanotubes on a catalyst |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0658889B2 (en) | 1994-08-03 |
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