JPS6085532A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6085532A
JPS6085532A JP19458183A JP19458183A JPS6085532A JP S6085532 A JPS6085532 A JP S6085532A JP 19458183 A JP19458183 A JP 19458183A JP 19458183 A JP19458183 A JP 19458183A JP S6085532 A JPS6085532 A JP S6085532A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
thickness
23a
sputtering
wiring layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19458183A
Inventor
Yoshiaki Tanimoto
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass

Abstract

PURPOSE:To prevent the formation of an SiO2 film, in which O2 is insufficient, while obtaining the flatter film by repeating a process in which the SiO2 film is applied on a substrate through sputtering and a process, in which one part of the film is etched through ion milling by O2 gas, and bringing the film to desired thickness. CONSTITUTION:Al wiring layers 22 having predetermined shape in approximately 1mum thickness are formed on the surface of a semiconductor substrate 21, and an SiO2 film 23a in not more than 1,000Angstrom film thickness is applied on the whole surface first through sputtering while turning the substrate 21. The film 23a is removed only bt 200-300Angstrom thickness through vertical etching by an ion milling method using O2 gas, and the thickness of the films 23a on the wiring layers 22 is thinned. A film 23b in approximately 100Angstrom film thickness is laminated on the film 23a through a sputtering method again, and the laminated films on the wiring layers 22 are thinned through the ion milling method again. A desired SiO2 film 23 is obtained by repeating the method, and the film 23 having a gentle surface is manufactured.
JP19458183A 1983-10-17 1983-10-17 Manufacture of semiconductor device Pending JPS6085532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19458183A JPS6085532A (en) 1983-10-17 1983-10-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19458183A JPS6085532A (en) 1983-10-17 1983-10-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6085532A true true JPS6085532A (en) 1985-05-15

Family

ID=16326920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19458183A Pending JPS6085532A (en) 1983-10-17 1983-10-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6085532A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
JP2000077404A (en) * 1998-07-31 2000-03-14 Samsung Electronics Co Ltd Forming method of insulating film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
JP2000077404A (en) * 1998-07-31 2000-03-14 Samsung Electronics Co Ltd Forming method of insulating film
JP4726273B2 (en) * 1998-07-31 2011-07-20 三星電子株式会社Samsung Electronics Co.,Ltd. Insulating film forming method

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