JPS60186065A - 絶縁ゲイト型電界効果半導体装置およびその作製方法 - Google Patents

絶縁ゲイト型電界効果半導体装置およびその作製方法

Info

Publication number
JPS60186065A
JPS60186065A JP59041754A JP4175484A JPS60186065A JP S60186065 A JPS60186065 A JP S60186065A JP 59041754 A JP59041754 A JP 59041754A JP 4175484 A JP4175484 A JP 4175484A JP S60186065 A JPS60186065 A JP S60186065A
Authority
JP
Japan
Prior art keywords
conductive film
semiconductor
insulator
electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59041754A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564471B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Akira Mase
晃 間瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59041754A priority Critical patent/JPS60186065A/ja
Publication of JPS60186065A publication Critical patent/JPS60186065A/ja
Publication of JPH0564471B2 publication Critical patent/JPH0564471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59041754A 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法 Granted JPS60186065A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59041754A JPS60186065A (ja) 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59041754A JPS60186065A (ja) 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5100411A Division JPH0722202B2 (ja) 1993-04-02 1993-04-02 絶縁ゲイト型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS60186065A true JPS60186065A (ja) 1985-09-21
JPH0564471B2 JPH0564471B2 (enrdf_load_stackoverflow) 1993-09-14

Family

ID=12617203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59041754A Granted JPS60186065A (ja) 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPS60186065A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0564471B2 (enrdf_load_stackoverflow) 1993-09-14

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