JPH0564471B2 - - Google Patents

Info

Publication number
JPH0564471B2
JPH0564471B2 JP59041754A JP4175484A JPH0564471B2 JP H0564471 B2 JPH0564471 B2 JP H0564471B2 JP 59041754 A JP59041754 A JP 59041754A JP 4175484 A JP4175484 A JP 4175484A JP H0564471 B2 JPH0564471 B2 JP H0564471B2
Authority
JP
Japan
Prior art keywords
conductive film
semiconductor
insulator
electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59041754A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60186065A (ja
Inventor
Shunpei Yamazaki
Akira Mase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59041754A priority Critical patent/JPS60186065A/ja
Publication of JPS60186065A publication Critical patent/JPS60186065A/ja
Publication of JPH0564471B2 publication Critical patent/JPH0564471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59041754A 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法 Granted JPS60186065A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59041754A JPS60186065A (ja) 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59041754A JPS60186065A (ja) 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5100411A Division JPH0722202B2 (ja) 1993-04-02 1993-04-02 絶縁ゲイト型電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS60186065A JPS60186065A (ja) 1985-09-21
JPH0564471B2 true JPH0564471B2 (enrdf_load_stackoverflow) 1993-09-14

Family

ID=12617203

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59041754A Granted JPS60186065A (ja) 1984-03-05 1984-03-05 絶縁ゲイト型電界効果半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPS60186065A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60186065A (ja) 1985-09-21

Similar Documents

Publication Publication Date Title
CN1050939C (zh) 用于显示的薄膜半导体器件及其制造方法
KR20010067268A (ko) Ｅｌ 표시 장치
JP2001166338A (ja) 液晶表示装置用薄膜トランジスタ基板及びその製造方法
CN101527320A (zh) 半导体装置
US20080299693A1 (en) Manufacturing method for display device
CN112420739A (zh) 一种显示面板及其制备方法
JP3532228B2 (ja) 液晶表示装置
KR20050014060A (ko) 박막 트랜지스터 표시판 및 그의 제조 방법
JP3799915B2 (ja) 電気光学装置の製造方法並びに半導体基板及び電気光学装置
JP2564501B2 (ja) 半導体装置
KR100646781B1 (ko) 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법
JP5577384B2 (ja) 半導体装置の作製方法
JPH0564471B2 (enrdf_load_stackoverflow)
JPH0722202B2 (ja) 絶縁ゲイト型電界効果半導体装置
JP2564502B2 (ja) 半導体装置
JPH0473764B2 (enrdf_load_stackoverflow)
JPH0652790B2 (ja) 固体表示装置の作製方法
KR100297861B1 (ko) 다층도체시스템의제조방법
CN101097370B (zh) 液晶显示器及其制造方法
KR101301520B1 (ko) 액정표시장치 제조방법
KR100984351B1 (ko) 박막 트랜지스터 표시판의 제조 방법
JPH0568707B2 (enrdf_load_stackoverflow)
KR100968567B1 (ko) 다층 박막의 제조 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법
JPS60164790A (ja) 固体表示装置
JPS6076170A (ja) 絶縁ゲイト型半導体装置作製方法