JPS601855A - Manufacture of resin-sealed semiconductor device - Google Patents
Manufacture of resin-sealed semiconductor deviceInfo
- Publication number
- JPS601855A JPS601855A JP11047483A JP11047483A JPS601855A JP S601855 A JPS601855 A JP S601855A JP 11047483 A JP11047483 A JP 11047483A JP 11047483 A JP11047483 A JP 11047483A JP S601855 A JPS601855 A JP S601855A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- semiconductor element
- metal substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は半導体素体が固着された金属基板の一部の両面
を放熱のために露出させ、半導体素体を樹脂によって封
止する樹脂封止形半導体装置の製造方法に関する。Detailed description of the invention [Technical field to which the invention pertains] The present invention relates to a resin sealing method in which both sides of a part of a metal substrate to which a semiconductor element is fixed are exposed for heat radiation, and the semiconductor element is sealed with resin. The present invention relates to a method of manufacturing a static semiconductor device.
そのような半導体装置としては、例えば第1図、第2囚
に示すようなJEDEC外形To −220形のものが
知られている。この型では、図示しないが半導体素体、
例えばトランジスタチップが金属基板1の上にろう付け
され、チップ上面のエミッタおよびペース電極とリード
線によって接続されるエミクた端子2、ペース端子3お
よび金属基板に連結されたコレクタ端子4と、金属基板
のそれらの反対側の一部分とを露出させて樹脂5が注型
さねている。この半導体装置は六6を用いて冷却体に固
定され、半導体素体の熱の大部分は基板1の露出部分を
経て冷却体へ放熱される。このような半導体装置の樹脂
封止設備は、樹脂注型のための金型によって同一形状の
半導体装置の製造のみしか使用することができない。し
かし半導体装置は素子の種類、あるいは使用箇所によっ
て、それ[通した異なる形状、寸法の設計が行われねば
ならなし・。As such a semiconductor device, a JEDEC To-220 type semiconductor device as shown in FIGS. 1 and 2, for example, is known. In this type, although not shown, a semiconductor element,
For example, a transistor chip is brazed onto a metal substrate 1, and includes emitter terminals 2, paste terminals 3, and collector terminals 4 connected to the metal substrate. A resin 5 is cast onto the resin 5, exposing a portion of the opposite side of the resin 5. This semiconductor device is fixed to a cooling body using a 66, and most of the heat of the semiconductor element is radiated to the cooling body through the exposed portion of the substrate 1. Such resin sealing equipment for semiconductor devices can only be used to manufacture semiconductor devices of the same shape using a mold for resin casting. However, semiconductor devices must be designed with different shapes and dimensions depending on the type of element or location of use.
例えば混成集積回路用素子ではそれ自体放熱板を必要と
七ず、基板面積を小さくして回路支持板への素子の実装
面積を小さくすることが望まれる。For example, an element for a hybrid integrated circuit does not itself require a heat sink, and it is desirable to reduce the area of the substrate and the mounting area of the element on the circuit support board.
従来はそのような放熱板の形状、寸法の異なる半導体装
置の製造にはその都度樹脂封止設備を用意しなければな
らなかった。Conventionally, resin sealing equipment had to be prepared each time such semiconductor devices with different shapes and dimensions of heat sinks were manufactured.
本発明は基板の一部を両面露出させて放熱器として利用
する樹脂封止形半導体装置を、同一の樹脂封止設備を用
いて放熱器の寸法、形状を変更することができろ製造方
法を提供することを目的とする。The present invention provides a manufacturing method for a resin-sealed semiconductor device in which a portion of a substrate is exposed on both sides and used as a heat sink, in which the dimensions and shape of the heat sink can be changed using the same resin sealing equipment. The purpose is to provide.
本発明は、半導体素体を支持する金属基板の一部の両面
を露出させて半導体素体を樹脂で被覆したのち、基板の
露出部分を所定の形状、寸法の部分を残して切断するこ
とにより上記の目的を達成する。The present invention involves exposing both sides of a part of a metal substrate that supports a semiconductor element, coating the semiconductor element with resin, and then cutting the exposed portion of the substrate leaving a portion of a predetermined shape and size. To achieve the above objectives.
第3図、第4図は本発明の実施例によりでき上がった樹
脂封止形半導体装N′?:示し、第1図、第2図と共通
の部分には同一の符号が付されている。FIGS. 3 and 4 show a resin-sealed semiconductor device N'? according to an embodiment of the present invention. : The same parts as in FIGS. 1 and 2 are given the same reference numerals.
この半導体装置は第1図、第2図に示す半導体装置と同
一の設備を用いて製造されるもので、従って金属基板は
第1図、第2図の場合の基板1と同一の寸法、形状を有
していたが、封止後最後の工程で放熱器11を残して切
断されている。このようにして第1図、第2図に示す半
導体装置を異なる放熱器形状の樹脂封止形半導体装置が
得られた。This semiconductor device is manufactured using the same equipment as the semiconductor device shown in FIGS. 1 and 2, and therefore the metal substrate has the same dimensions and shape as the substrate 1 shown in FIGS. 1 and 2. However, in the final step after sealing, it was cut leaving the radiator 11. In this way, a resin-sealed semiconductor device having a heat sink shape different from the semiconductor device shown in FIGS. 1 and 2 was obtained.
切断は油圧プレスなどを用いて簡単にできる。Cutting can be easily done using a hydraulic press or the like.
本発明は同一形状、寸法の金属基板上に半導体素体を固
着し、同一の樹脂封止設備を用いて樹脂により半導体素
体を被覆したのち、金属基板を任意の形状、寸法の部分
を残して切断することにより放熱器の形状、寸法の異な
る樹脂封止形半導体装置を同−設備で製造可能にしたも
ので、半導体装置製造設備使用効率の向上、生産管理の
簡易化、製造原価の低減などの効果を収めることがてぎ
た。In the present invention, a semiconductor element is fixed onto a metal substrate of the same shape and size, and the semiconductor element is covered with resin using the same resin sealing equipment, and then the metal substrate is left with a portion of an arbitrary shape and size. This makes it possible to manufacture resin-encapsulated semiconductor devices with different shapes and sizes of heatsinks in the same equipment by cutting the heatsink using the same equipment, which improves the efficiency of semiconductor device manufacturing equipment usage, simplifies production management, and reduces manufacturing costs. It was possible to achieve such effects.
第1図はTo−22Q形半導体装置の平面図、第2図は
その側面図、第3図は本発明の一実施例による半導体装
置のでき上がり後の平面図、第4図はその側面図である
。
l・・・金属基板、11・・・切断後の金属基板(放効
器)、5・・・樹脂。
第1図
第3図
第2[!1
第4図FIG. 1 is a plan view of a To-22Q type semiconductor device, FIG. 2 is a side view thereof, FIG. 3 is a plan view of a completed semiconductor device according to an embodiment of the present invention, and FIG. 4 is a side view thereof. be. l... Metal substrate, 11... Metal substrate after cutting (radiator), 5... Resin. Figure 1 Figure 3 Figure 2 [! 1 Figure 4
Claims (1)
部の両面を露出させて前記半導体素体を樹脂によって被
覆した後、前記金属基板の露出部分を所定の形状、寸法
の部分を残して切断することを特徴とする樹脂封止形半
導体装置の製造方法。1) After fixing a semiconductor element onto a metal substrate, exposing both sides of a part of the metal substrate, and covering the semiconductor element with a resin, the exposed portion of the metal substrate is shaped into a portion having a predetermined shape and size. 1. A method for manufacturing a resin-sealed semiconductor device, characterized in that the device is cut while leaving a .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11047483A JPS601855A (en) | 1983-06-20 | 1983-06-20 | Manufacture of resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11047483A JPS601855A (en) | 1983-06-20 | 1983-06-20 | Manufacture of resin-sealed semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS601855A true JPS601855A (en) | 1985-01-08 |
Family
ID=14536621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11047483A Pending JPS601855A (en) | 1983-06-20 | 1983-06-20 | Manufacture of resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS601855A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02129952A (en) * | 1988-11-09 | 1990-05-18 | Fuji Electric Co Ltd | Manufacture of resin-sealed semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911794A (en) * | 1972-04-28 | 1974-02-01 | ||
JPS5384560A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Manufacture for mould type semiconductor device |
-
1983
- 1983-06-20 JP JP11047483A patent/JPS601855A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911794A (en) * | 1972-04-28 | 1974-02-01 | ||
JPS5384560A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Manufacture for mould type semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02129952A (en) * | 1988-11-09 | 1990-05-18 | Fuji Electric Co Ltd | Manufacture of resin-sealed semiconductor device |
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